Murata WBSC Wire-Bondable Vertical Si Capacitors
Murata WBSC Wire-Bondable Vertical Silicon Capacitors are ideal for DC decoupling and are dedicated to applications where reliability up to +150°C is the main parameter. These Si capacitors have been developed with a semiconductor process that enables the integration of high capacitance density from 1.55nF/mm2 to 250nF/mm2 (with a breakdown voltage of 450V to 11V, respectively). During production, the capacitors are cured with a high temperature (above +900°C) that generates highly pure oxide. This technology offers industry-leading performances relative to the capacitor stability up to +150°C with a temperature coefficient equal to +60ppm/K. In addition, the intrinsic properties of the silicon show a low dielectric absorption and a low to zero piezoelectric effect, resulting in no memory effect.Features
- 250µm low profile
- low leakage current
- High stability (temperature and voltage)
- Negligible capacitance loss through aging
- Compatible with standard wire bonding assemblies (ball and wedge)
Applications
- Radar, LiDAR, aerospace, wireless infrastructure communication, data broadcasting, and automotive
- Standard wire bonding approach (ball and wedge) due to pad flatness
- High-reliability applications
- Decoupling, DC noise, harmonic filtering, and matching networks (GaN power amplifier, LDMOS)
- Downsizing
- Low-profile applications (100µm)
Specifications
- 100pF to 22nF capacitance range
- ±15% capacitance tolerance
- -55°C to +150°C temperature range
- +60ppm/K temperature coefficient
- 11V, 30V, 50V, 100V, 150V, and 450V breakdown voltages
- <0.001%/1000 hours aging
- 250µm thickness
Pubblicato: 2019-10-24
| Aggiornato: 2023-12-01
