Microchip Technology MOSFET SIC di 1.200 V

I MOSFET SIC di 1.200 V di Microchip eliminano la necessità di un diodo di ricircolo esterno e offrono una maggiore robustezza contro la valanga in un diodo integrato veloce e affidabile.

The TO-247-4 Notch package enables efficient, high-power designs with improved thermal performance and reduced parasitic effects. Its four-lead layout includes a Kelvin source to reduce gate ringing and switching losses, while the Notch design enhances creepage distance for improved high-voltage reliability.

The QDPAK package is a compact, surface-mount, top-side cooled solution designed to maximize the performance advantages of silicon carbide devices in high-power applications. It enables a direct thermal path from the device to an external heatsink, decoupling heat dissipation from the PCB and improving thermal performance, power density, and layout flexibility. The package also reduces parasitic inductance, supports fast switching, and simplifies automated assembly, while its emerging industry‑standard footprint allows scalable, multi-source designs and reduced system complexity.