MACOM CGH09120F GaN High Electron Mobility Transistor
MACOM CGH09120F GaN High Electron Mobility Transistor (HEMT) is designed for high efficiency, high gain, and wide bandwidth capabilities. This module allows for a high degree of DPD correction to be applied, making it ideal for MC-GSM, WCDMA, and LTE amplifier applications. This MACOM transistor is housed in a ceramic/metal flange package.
Features
- UHF to 2.5GHz operation
- 21dB gain
- -38dBc ACLR at 20W PAVE
- 35% efficiency at 20W PAVE
- High degree of DPD correction can be applied
- Ceramic/metal flange package
Applications
- MC-GSM
- WCDMA
- LTE amplifiers
Pubblicato: 2017-10-06
| Aggiornato: 2024-01-19