FP10R12W1T7_B11 EasyPIM™ 1B IGBT Module is a 1200V, 10A three-phase input rectifier PIM (Power Integrated Module) Insulated Gate Bipolar Transistor Module with TRENCHSTOP™ IGBT7, an Emitter Controlled Diode, and PressFIT Contact Technology. The compact EasyPIM IGBT Modules are without base plates, instead featuring a fast, reliable, and low-cost screw clamp mount.
VCES = 1200V
IC nom = 10A
Low on state voltage VCE(sat) and Vf
Tvj op=175°C at overload
Enhanced controllability of dv/dt
Optimized switching losses for dv/dt = 5kV/µs
8μs short-circuit robustness
Improved FWD softness
Infineon Technologies Moduli IGBT EasyPACK™ FS50R12W2T7 e FS75R12W2T7
Moduli IGBT raddrizzatore di ingresso trifase da 1200 V con tecnologia a™ diodo TRENCHSTOP ed EC7.