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Diodes Incorporated DMN4800LSSQ N-Channel Enhancement Mode MOSFETs

Diodes Incorporated DMN4800LSSQ N-Channel Enhancement Mode MOSFETs are designed to minimize the on-state resistance (RDS(ON)) and maintain superior switching performance. The DMN4800LSSQ is ideal for high-efficiency power management applications. Typical applications for Diodes Incorporated DMN4800LSSQ N-Channel Enhancement Mode MOSFETs are for backlighting, power management functions, and DC-DC Converters.

Features

  • Low on-resistance
  • Low input capacitance
  • Fast switching speed
  • Low input/output leakage
  • "Green" device
  • Lead-free and RoHS compliant
  • PPAP capable

Applications

  • Backlighting
  • Power management functions
  • DC-DC converters
Pubblicato: 2016-05-02 | Aggiornato: 2022-03-11