Alliance Memory Pseudo SRAM
Alliance Memory Pseudo SRAM uses DRAM-type memory cells and has a refresh-free operation and extreme low power consumption technology. The interface is compatible to a low-power Asynchronous type SRAM. These devices are variations of the industry-standard Flash control interface with a multiplexed address/data bus. The multiplexed address and data functionality dramatically reduces the required signal count and increases read/write bandwidth.Features
- Address access speed 70ns
- Power Supply Voltage : 2.6 ~ 3.3V
- Separated I/O power(VccQ) & Core power(Vcc)
- Three state outputs
- Byte read/write control by UB# / LB#
- Auto-TCSR for power saving
- Package type: 48-FPBGA 6.0x7.0
- Operating Temperature
- Industrial: -40℃ ~ 85℃
Additional Resources
View Results ( 4 ) Page
| Codice prodotto | Scheda dati | Dimensioni memoria | Organizzazione | Tensione di alimentazione - Max. | Tensione di alimentazione - Min. | Package/involucro |
|---|---|---|---|---|---|---|
| AS1C8M16PL-70BIN | ![]() |
128 Mbit | 8 M x 16 | 1.95 V | 1.7 V | FBGA-49 |
| AS1C4M16PL-70BIN | ![]() |
64 Mbit | 4 M x 16 | 1.95 V | 1.7 V | FBGA-49 |
| AS1C4M16PL-70BINTR | ![]() |
64 Mbit | 4 M x 16 | 1.95 V | 1.7 V | FBGA-49 |
| AS1C8M16PL-70BINTR | ![]() |
128 Mbit | 8 M x 16 | 1.95 V | 1.7 V | FBGA-49 |
Pubblicato: 2018-10-17
| Aggiornato: 2022-11-07

