SemiQ Featured Products
Dispositivi discreti MOSFET SiC GEN3 1.200 V
Developed to increase performance and cut switching losses in high-voltage applications.
Moduli di potenza MOSFET SiC GEN3 1.200 V
With an isolated backplate, based on third-generation SiC technology, and tested at over 1400V.
Diodo Schottky SiC 1700 V QSiC™ GP3D050B170B
Disponibile in un package TO-247-2L progettato per soddisfare le esigenze di potenza e dimensioni in una vasta gamma di applicazioni.
Moduli a mezzo ponte MOSFET SiC 1.200 V GCMX
Basse perdite di commutazione, bassa resistenza termica da giunzione a involucro e montaggio semplice e robusto.
Moduli a ponte completo MOSFET SiC GCMX da 1.200 V
Ideale per inverter fotovoltaici, sistemi di accumulo di energia e convertitori CC-CC ad alta tensione.
GP2T020A120H 1200V SiC MOSFET
Offers reduced switching losses, higher efficiency, and increased power density.
GCMX040B120S1-E1 1200V SiC MOSFET Power Module
The module is simple to drive, very rugged, & easy to mount with high-speed switching SiC MOSFETs.
GCMS040B120S1-E1 1200V SiC COPACK Power Module
The module is simple to drive, very rugged, & easy to mount with high-speed switching SiC MOSFETs.