DRAM

Risultati: 2.503
Seleziona Immagine Codice Produttore Descrizione Scheda dati Disponibilità Prezzi (EUR) Filtra i risultati nella tabella per prezzo unitario in base alla quantità. Qtà RoHS Modello ECAD Tipo Dimensioni memoria Larghezza bus dati Frequenza di clock massima Package/involucro Organizzazione Tempo di accesso Tensione di alimentazione - Min. Tensione di alimentazione - Max. Temperatura di lavoro minima Temperatura di lavoro massima Serie Confezione
Alliance Memory DRAM DDR3, 4G, 256M X 16, 1.35V, 96-BALL FBGA, 800MHZ, Commercial Temp - Tape & Reel 10A magazzino
Min: 1
Mult.: 1
: 2.500

SDRAM - DDR3L 4 Gbit 16 bit 800 MHz FBGA-96 256 M x 16 20 ns 1.283 V 1.45 V 0 C + 95 C Reel, Cut Tape
Alliance Memory DRAM DDR1, 1G, 64M X 16, 2.5V, 60-BALL BGA, 166 MHZ, INDUSTRIAL TEMP - Tray 5A magazzino
Min: 1
Mult.: 1

SDRAM - DDR 1 Gbit 16 bit 166 MHz FBGA-60 64 M x 16 700 ps 2.3 V 2.7 V - 40 C + 85 C AS4C64M16D1A Tray
Alliance Memory DRAM LPDDR4, 2G, 128M x 16, 1.1V, 200 BALL TFBGA, 1600MHZ, ECC, AUTO TEMP - Tray 19A magazzino
Min: 1
Mult.: 1

SDRAM Mobile - LPDDR4 2 Gbit 16 bit 1.6 GHz FBGA-200 128 M x 16 3.5 ns 1.06 V 1.95 V - 40 C + 105 C Tray
Alliance Memory DRAM LPDDR4, 4G, 256M x 16, 1.1V, 200 BALL TFBGA, 1600MHZ, ECC, AUTO TEMP - Tray 5A magazzino
Min: 1
Mult.: 1

SDRAM - LPDDR4 4 Gbit 16 bit 1.6 GHz FBGA-200 256 M x 16 3.5 ns 1.06 V 1.95 V - 40 C + 105 C Tray
ISSI IS43LR16640C-6BL
ISSI DRAM 1G, 1.8V, Mobile DDR, 64Mx16, 166Mhz, 60 ball BGA (8mmx10mm) RoHS 255A magazzino
Min: 1
Mult.: 1

BGA-60
ISSI DRAM 256Mb, 1.8V, 267MHz 16Mx16 DDR2 SDRAM 257A magazzino
Min: 1
Mult.: 1

SDRAM - DDR2 256 Mbit 16 bit 266 MHz WBGA-84 16 M x 16 500 ps 1.7 V 1.9 V - 40 C + 95 C IS43DR16160B Tray
SMARTsemi DRAM DDR4, 8Gb, 1Gbx8, 1600Mhz, 3200Mbps, 1.2V, 78-ball FBGA, Industrial temp
21003/09/2026 previsto
Min: 1
Mult.: 1

SDRAM - DDR4 8 Gbit 8 bit 1.6 GHz FBGA-78 1 G x 8 1.14 V 1.26 V - 40 C + 85 C
SMARTsemi DRAM DRAM DDR3(L) 4GB 256MX16 1866Mbps 1.35V/1.5V 96-FBGA Commercial
13128/09/2026 previsto
Min: 1
Mult.: 1

SDRAM - DDR3L 4 Gbit 16 bit 933 MHz FBGA-96 256 M x 16 1.283 V 1.575 V 0 C + 85 C KTDM Tray
Kingston DRAM itemp 4Gb 96 ball FBGA DDR4 3200
125In ordine
Min: 1
Mult.: 1

SDRAM - DDR4 4 Gbit 16 bit 3.2 GHz FBGA-96 256 M x 16 13.75 ns 1.2 V 2.5 V - 40 C + 95 C Tray
Kingston DRAM 96 ball FBGA DDR4 3200 (NY C)
10025/08/2026 previsto
Min: 1
Mult.: 1

SDRAM - DDR4 8 Gb 3.2 Gb/s FBGA-96 512 M x 16 1.14 1.26 V 0 C + 95 C Tray
Intelligent Memory DRAM SDRAM, 256Mb, 3.3V, 16Mx16, 166MHz (166Mbps), -40C to +85C, TSOPII-54
32407/09/2026 previsto
Min: 1
Mult.: 1

SDRAM 256 Mbit 16 bit 166 MHz TSOP-II-54 16 M x 16 5.4 ns 3 V 3.6 V - 40 C + 85 C IM2516SD Tray
Intelligent Memory DRAM ECC DDR3, 1Gb, 1.5V, 64Mx16, 667MHz (1333Mbps), -40C to +95C, FBGA-96
45007/09/2026 previsto
Min: 1
Mult.: 1

SDRAM - DDR3 1 Gbit 16 bit 667 MHz FBGA-96 64 M x 16 300 ps 1.425 V 1.575 V - 40 C + 95 C IME1G16D3 Tray
Intelligent Memory DRAM ECC SDRAM, 512Mb, 3.3V, 64Mx8, 133MHz (133Mbps), -40C to +85C, TSOPII-54
12128/08/2026 previsto
Min: 1
Mult.: 1

SDRAM 512 Mbit 8 bit 133 MHz TSOP-II-54 64 M x 8 5.4 ns 3 V 3.6 V - 40 C + 85 C IME5108SD Tray
Intelligent Memory DRAM ECC SDRAM, 512Mb, 3.3V, 32Mx16, 133MHz (133Mbps), 0C to +70C, TSOPII-54
21621/10/2026 previsto
Min: 1
Mult.: 1

SDRAM 512 Mbit 16 bit 133 MHz TSOP-II-54 32 M x 16 5.4 ns 3 V 3.6 V 0 C + 70 C IME5116SD Tray
Intelligent Memory DRAM ECC SDRAM, 512Mb, 3.3V, 32Mx16, 133MHz (133Mbps), -40C to +85C, TSOPII-54
10820/10/2026 previsto
Min: 1
Mult.: 1

SDRAM 512 Mbit 16 bit 133 MHz TSOP-II-54 32 M x 16 5.4 ns 3 V 3.6 V - 40 C + 85 C IME5116SD Tray
ISSI IS45S32800J-7TLA2
ISSI DRAM 310A magazzino
Min: 1
Mult.: 1
SDRAM 256 Mbit 32 bit 143 MHz TSOP-II-86 8 M x 32 7 ns 3 V 3.6 V - 40 C + 105 C
ISSI DRAM 256Mb, 1.8V, 400MHz 16Mx16 DDR2 SDRAM 56A magazzino
Min: 1
Mult.: 1

SDRAM - DDR2 256 Mbit 16 bit 400 MHz WBGA-84 16 M x 16 400 ps 1.7 V 1.9 V - 40 C + 85 C IS43DR16160B Reel
ISSI DRAM SYNC. DRAM 256Mb 16M x16, Automotive 1A magazzino
10808/12/2026 previsto
Min: 1
Mult.: 1

SDRAM 256 Mbit 16 bit 166 MHz TSOP-II-54 16 M x 16 6 ns 3 V 3.6 V - 40 C + 85 C IS45S16160J
ISSI DRAM 256Mb, 1.8V, 267MHz 16Mx16 DDR2 SDRAM 49A magazzino
Min: 1
Mult.: 1

SDRAM - DDR2 256 Mbit 16 bit 266 MHz BGA-84 16 M x 16 500 ps 1.7 V 1.9 V 0 C + 85 C IS43DR16160B Tray
ISSI DRAM 512M (32Mx16) 200MHz 2.5v DDR SDRAM 59A magazzino
Min: 1
Mult.: 1

SDRAM - DDR 512 Mbit 16 bit 200 MHz TSOP-II-66 32 M x 16 5 ns 2.3 V 2.7 V 0 C + 70 C IS43R16320D Tray
ISSI DRAM 512M (32Mx16) 166MHz 2.5v DDR SDRAM 28A magazzino
Min: 1
Mult.: 1

SDRAM - DDR 512 Mbit 16 bit 166 MHz TSOP-II-66 32 M x 16 6 ns 2.3 V 2.7 V 0 C + 70 C IS43R16320D Tray
ISSI DRAM 512M (64Mx8) 200MHz 2.5v DDR SDRAM 96A magazzino
Min: 1
Mult.: 1

SDRAM - DDR 512 Mbit 8 bit 200 MHz TSOP-II-66 64 M x 8 5 ns 2.5 V 2.7 V 0 C + 70 C IS43R86400D Tray
ISSI DRAM 256M, 2.5V, 200Mhz 16Mx16 DDR SDRAM 54A magazzino
Min: 1
Mult.: 1

SDRAM - DDR 256 Mbit 16 bit 200 MHz TSOP-II-66 16 M x 16 5 ns 2.3 V 2.7 V - 40 C + 85 C IS46R16160D Tray
ISSI IS42VM32200M-75BLI
ISSI DRAM 64M, 1.8V, M-SDRAM 2Mx32, 133Mhz, RoHS 22A magazzino
Min: 1
Mult.: 1

SDRAM Mobile 64 Mbit 32 bit 133 MHz 2 M x 32 8 ns 1.7 V 1.95 V - 40 C + 85 C IS42VM32200M
AP Memory APS512XXN-OB9-BG
AP Memory DRAM IoT RAM 512Mb OPI (x8,x16) DDR 250MHz, 1.8V, Ind. Temp., BGA24
6.449In ordine
Min: 1
Mult.: 1

PSRAM (Pseudo SRAM) 512 Mbit 8 bit / 16 bit 250 MHz BGA-24 64 M x 8/32 M x 16 1.62 V 1.98 V - 40 C + 85 C IoT RAM Tray