MOSFET di potenza StrongIRFET™ 2

I MOSFET di potenza StrongIRFET™ 2 di Infineon Technologies sono MOSFET a canale N, livello normale e testati a valanga al 100%. I MOSFET StrongIRFET 2 di Infineon sono ottimizzati per una vasta gamma di applicazioni. I MOSFET offrono una gamma VDS da 80 V a 100 V e una RDS(on) da 2,4 mΩ a 8,2 mΩ.

Risultati: 74
Seleziona Immagine Codice Produttore Descrizione Scheda dati Disponibilità Prezzi (EUR) Filtra i risultati nella tabella per prezzo unitario in base alla quantità. Qtà RoHS Modello ECAD Tecnologia Stile di montaggio Package/involucro Polarità transistor Numero di canali Vds - Tensione di rottura drain-source Id - corrente di drain continua Rds On - Drain-source sulla resistenza Vgs - Tensione gate-source Vgs th - Tensione di soglia gate-source Qg - Carica del gate Temperatura di lavoro minima Temperatura di lavoro massima Pd - Dissipazione di potenza Modalità canale Nome commerciale Confezione
Infineon Technologies MOSFET Addresses a broad range of applications from low- to high-switching frequency 2.445A magazzino
Min: 1
Mult.: 1
: 2.000

Si SMD/SMT TO-252-3 N-Channel 1 Channel 30 V 71 A 4.7 mOhms - 20 V, 20 V 2.35 V 10 nC - 55 C + 175 C 65 W Enhancement StrongIRFET Reel, Cut Tape
Infineon Technologies MOSFET IFX FET 40V 1.331A magazzino
Min: 1
Mult.: 1
: 800

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 40 V 197 A 1.25 mOhms - 20 V, 20 V 2.1 V 159 nC - 55 C + 175 C 250 W Enhancement StrongIRFET Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET IFX FET 40V 1.099A magazzino
Min: 1
Mult.: 1
: 800

Si SMD/SMT TO-263-7 N-Channel 1 Channel 40 V 302 A 900 uOhms - 20 V, 20 V 2.1 V 210 nC - 55 C + 175 C 375 W Enhancement StrongIRFET Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET IFX FET 60V 5.961A magazzino
Min: 1
Mult.: 1
: 800

Si SMD/SMT TO-263-7 N-Channel 1 Channel 60 V 223 A 1.7 mOhms - 20 V, 20 V 2.1 V 108 nC - 55 C + 175 C 188 W Enhancement StrongIRFET Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET IFX FET 40V 4.900A magazzino
Min: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 40 V 197 A 1.3 mOhms - 20 V, 20 V 3.4 V 159 nC - 55 C + 175 C 250 W Enhancement Tube
Infineon Technologies MOSFET IFX FET 40V 2.973A magazzino
9.000In ordine
Min: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 40 V 193 A 1.5 mOhms - 20 V, 20 V 3.4 V 106 nC - 55 C + 175 C 188 W Enhancement Tube
Infineon Technologies MOSFET IR FET UP TO 60V 3.996A magazzino
Min: 1
Mult.: 1

Si Through Hole N-Channel 1 Channel 30 V 121 A 2.35 mOhms - 20 V, 20 V 2.35 V 50 nC - 55 C + 175 C 107 W Enhancement StrongIRFET Tube
Infineon Technologies MOSFET IR FET UP TO 60V 2.919A magazzino
Min: 1
Mult.: 1

Si Through Hole N-Channel 1 Channel 30 V 53 A 4.35 mOhms - 20 V, 20 V 2.35 V 27 nC - 55 C + 175 C 75 W Enhancement StrongIRFET Tube
Infineon Technologies MOSFET IR FET UP TO 60V 3.044A magazzino
Min: 1
Mult.: 1

Si Through Hole N-Channel 1 Channel 30 V 53 A 4.95 mOhms - 20 V, 20 V 2.35 V 21 nC - 55 C + 175 C 65 W Enhancement StrongIRFET Tube
Infineon Technologies MOSFET IFX FET >80 - 100V 1.628A magazzino
Min: 1
Mult.: 1
: 1.800

Si SMD/SMT HSOF-8 N-Channel 1 Channel 100 V 294 A 1.75 mOhms - 20 V, 20 V 2.2 V 130 nC - 55 C + 175 C 300 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET IFX FET >80 - 100V 2.016A magazzino
Min: 1
Mult.: 1
: 2.000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 100 V 52 A 13 mOhms - 20 V, 20 V 2.2 V 18.6 nC - 55 C + 175 C 71 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET IFX FET > 60-80V 963A magazzino
Min: 1
Mult.: 1
: 800

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 80 V 170 A 1.65 mOhms - 20 V, 20 V 2.2 V 170 nC - 55 C + 175 C 300 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET IFX FET > 60-80V 6.339A magazzino
Min: 1
Mult.: 1
Si Through Hole N-Channel 1 Channel 80 V 115 A 4 mOhms - 20 V, 20 V 3.8 V 54 nC - 55 C + 175 C 150 W Enhancement Tube
Infineon Technologies MOSFET IFX FET 60V 1.795A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 60 V 194 A 1.6 mOhms - 20 V, 20 V 2.1 V 155 nC - 55 C + 175 C 250 W Enhancement Tube
Infineon Technologies MOSFET IFX FET >80 - 100V 871A magazzino
Min: 1
Mult.: 1
: 800

Si SMD/SMT TO-263-7 N-Channel 1 Channel 100 V 139 A 4.25 mOhms - 20 V, 20 V 2.2 V 57 nC - 55 C + 175 C 167 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET IFX FET >80 - 100V 154A magazzino
2.40007/10/2026 previsto
Min: 1
Mult.: 1
: 800

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 100 V 135 A 4.35 mOhms - 20 V, 20 V 2.2 V 57 nC - 55 C + 175 C 167 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET IFX FET > 60-80V 1.190A magazzino
2.00002/09/2026 previsto
Min: 1
Mult.: 1
: 2.000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 80 V 129 A 4 mOhms - 20 V, 20 V 2.2 V 54 nC - 55 C + 175 C 150 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET IFX FET >80 - 100V 1.523A magazzino
Min: 1
Mult.: 1
: 2.000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 100 V 118 A 5.2 mOhms - 20 V, 20 V 2.2 V 51 nC - 55 C + 175 C 150 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET IFX FET > 60-80V 1.047A magazzino
Min: 1
Mult.: 1
: 2.000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 80 V 98 A 5.5 mOhms - 20 V, 20 V 2.2 V 36 nC - 55 C + 175 C 107 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET IFX FET 60V 213A magazzino
Min: 1
Mult.: 1
: 800

Si SMD/SMT TO-263-7 N-Channel 1 Channel 60 V 293 A 1.05 mOhms - 20 V, 20 V 2.1 V 203 nC - 55 C + 175 C 300 W Enhancement StrongIRFET Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET IFX FET 40V 238A magazzino
Min: 1
Mult.: 1
: 800

Si SMD/SMT TO-263-7 N-Channel 1 Channel 40 V 232 A 1.35 mOhms - 20 V, 20 V 2.1 V 106 nC - 55 C + 175 C 188 W Enhancement StrongIRFET Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET IFX FET >80 - 100V 415A magazzino
80003/09/2026 previsto
Min: 1
Mult.: 1
: 800

Si SMD/SMT TO-263-7 N-Channel 1 Channel 100 V 117 A 5.05 mOhms - 20 V, 20 V 2.2 V 51 nC - 55 C + 175 C 150 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET IR FET UP TO 60V 460A magazzino
Min: 1
Mult.: 1

Si Through Hole N-Channel 1 Channel 30 V 210 A 1.05 mOhms - 20 V, 20 V 2.35 V 224 nC - 55 C + 175 C 3.8 W Enhancement StrongIRFET Tube
Infineon Technologies MOSFET IR FET UP TO 60V 749A magazzino
Min: 1
Mult.: 1

Si Through Hole N-Channel 1 Channel 30 V 125 A 2.05 mOhms - 20 V, 20 V 2.35 V 69 nC - 55 C + 175 C 136 W Enhancement StrongIRFET Tube
Infineon Technologies MOSFET IR FET UP TO 60V 679A magazzino
1.00014/09/2026 previsto
Min: 1
Mult.: 1

Si Through Hole N-Channel 1 Channel 30 V 78 A 3.3 mOhms - 20 V, 20 V 2.35 V 3 nC - 55 C + 175 C 83 W Enhancement StrongIRFET Tube