UJ3D 650V/1200V/1700V SiC Schottky Diodes

onsemi UJ3D 650V/1200V/1700V SiC Schottky Diodes are designed to take advantage of SiC's superior physical characteristics over standard silicon, with 4 times better dynamic characteristics and 15% less forward voltage (VF). With zero reverse recovery charge and a high maximum junction temperature of +175°C, these devices are ideally suited for high-frequency and high-efficiency power systems with minimum cooling requirements. These devices from onsemi feature an optimized forward voltage drop, enhanced surge capability, and ultra-low reverse recovery Qc(Qrr) and are ideally suited for telecom power, server PSUs, battery chargers, and any application that requires high switching speeds and reduced losses. All devices are qualified according to AEC-Q101 standards and manufactured in a TS 16949-certified supply chain, making them ideal for automotive applications. 

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Qtà RoHS Modello ECAD Stile di montaggio
Package/involucro
Configurazione
If - Corrente diretta
Vrrm - Tensione inversa ripetitiva
Vf - Tensione diretta
Ifsm - Sovracorrente diretta
Ir - Corrente inversa
Temperatura di lavoro minima
Temperatura di lavoro massima
Vr - Tensione inversa
Serie
Qualifica
Confezione
onsemi Diodi Schottky SiC 1200V/50ASICDIODEG3TO
Scheda dati
1.307A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-2 Single 50 A 1.2 kV 1.5 V 275 A 52 uA - 55 C + 175 C 1.2 kV UJ3D AEC-Q101 Tube
onsemi Diodi Schottky SiC 1200V/20ASICDIODEDUAL
Scheda dati
343A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-3 Dual 20 A 1.2 kV 1.4 V 240 A 200 uA - 55 C + 175 C 1.2 kV UJ3D AEC-Q101 Tube
onsemi Diodi Schottky SiC 1200V/50ASICDIODEG3TO
Scheda dati
538A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-3 Single 50 A 1.2 kV 1.5 V 275 A 500 uA - 55 C + 175 C 1.2 kV UJ3D AEC-Q101 Tube
onsemi Diodi Schottky SiC 1200V/10ASICDIODEG3TO
Scheda dati
688A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-2 Single 10 A 1.2 kV 1.4 V 120 A 10 uA - 55 C + 175 C 1.2 kV UJ3D AEC-Q101 Tube
onsemi Diodi Schottky SiC 1200V/20ASICDIODEG3TO
Scheda dati
917A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-2 Single 20 A 1.2 kV 1.52 V 190 A 18 uA - 55 C + 175 C 1.2 kV UJ3D AEC-Q101 Tube
onsemi Diodi Schottky SiC 1200V/10ASICDIODEG3TO
Scheda dati
1.039A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-3 Single 10 A 1.2 kV 1.4 V 120 A 100 uA - 55 C + 175 C 1.2 kV UJ3D AEC-Q101 Tube
onsemi Diodi Schottky SiC 1200V/10ASICDIODEDUAL
Scheda dati
1.070A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-3 Dual 10 A 1.2 kV 1.4 V 140 A 80 uA - 55 C + 175 C 1.2 kV UJ3D AEC-Q101 Tube
onsemi Diodi Schottky SiC 1700V/25ASICDIODEG3TO
Scheda dati
236A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-2 Single 25 A 1.7 kV 1.54 V 180 A 24 uA - 55 C + 175 C 1.7 kV UJ3D AEC-Q101 Tube
onsemi Diodi Schottky SiC 650V/60ASICDIODEDUALG
Scheda dati
140A magazzino
60020/11/2026 previsto
Min: 1
Mult.: 1
Max.: 50

Through Hole TO-247-3 Dual 60 A 650 V 1.5 V 330 A 60 uA - 55 C + 175 C 650 V UJ3D AEC-Q101 Tube
onsemi Diodi Schottky SiC 650V/20ASICDIODEDUALG
Scheda dati
139A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-3 Dual 20 A 650 V 1.5 V 140 A 20 uA - 55 C + 175 C 650 V UJ3D AEC-Q101 Tube