DTMOSIV-H MOSFETs

Toshiba DTMOSIV-H MOSFETs are suited to applications that require high reliability, power efficiency, and a compact design, such as high-efficiency switching power supplies for servers and telecom base stations and as power conditioners for photovoltaic inverters. Toshiba DTMOSIV-H MOSFETs achieve a high-speed switching performance while keeping the low ON-resistance level of conventional DTMOSIV and without loss of power. This is accomplished by reducing parasitic capacitance between gate and drain, which also contributes to improved power efficiency and downsizing of products.

Risultati: 19
Seleziona Immagine Codice Produttore Descrizione Scheda dati Disponibilità Prezzi (EUR) Filtra i risultati nella tabella per prezzo unitario in base alla quantità. Qtà RoHS Modello ECAD Tecnologia Stile di montaggio Package/involucro Polarità transistor Numero di canali Vds - Tensione di rottura drain-source Id - corrente di drain continua Rds On - Drain-source sulla resistenza Vgs - Tensione gate-source Vgs th - Tensione di soglia gate-source Qg - Carica del gate Temperatura di lavoro minima Temperatura di lavoro massima Pd - Dissipazione di potenza Modalità canale Nome commerciale Confezione
Toshiba MOSFET Power MOSFET N-Channel 637A magazzino
5,42 €
3,87 €
2,86 €
2,54 €
2,27 €
Min: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 25 A 120 mOhms 30 V 3 V 60 nC - 55 C + 150 C 45 W Enhancement DTMOSIV-H Tube
Toshiba MOSFET DTMOSIV-High Speed 600V 88mVGS=10V) 4.891A magazzino
Nastro continuo
5,92 €
3,15 €
2,97 €
Nastrati
2,97 €
Min: 1
Mult.: 1
: 2.500
Si SMD/SMT DFN8x8-5 N-Channel 1 Channel 600 V 30.8 A 78 mOhms 30 V 3.5 V 65 nC - 55 C + 150 C 240 W Enhancement DTMOSIV-H Reel, Cut Tape
Toshiba MOSFET Power MOSFET N-Channel 88A magazzino
5,16 €
2,67 €
2,41 €
Min: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 25 A 105 mOhms 30 V 2.5 V 40 nC - 55 C + 150 C 180 W Enhancement DTMOSIV-H Tube

Toshiba MOSFET DTMOSIV-H/S 600V 65mOhmmax(VGS=10V) 14A magazzino
9,53 €
5,64 €
5,48 €
Min: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 38.8 A 55 mOhms 30 V 3.5 V 85 nC - 55 C + 150 C 270 W Enhancement DTMOSIV-H Tube
Toshiba MOSFET N-ch MOSFET, 600 V, 0.024 Ohm10V, TO-247, DTMOS6 36A magazzino
12,02 €
9,43 €
Min: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 80 A 24 mOhms 30 V 4 V 140 nC + 150 C 506 W Enhancement Tube
Toshiba MOSFET TO-220SIS PD=45W 1MHz PWR MOSFET TRNS 97A magazzino
5,28 €
2,76 €
2,51 €
2,09 €
2,02 €
Min: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 22 A 160 mOhms 30 V 4.5 V 50 nC - 55 C + 150 C 45 W Enhancement DTMOSIV-H Tube
Toshiba MOSFET Power MOSFET N-Channel 51A magazzino
5,41 €
3,54 €
2,61 €
2,31 €
2,06 €
Min: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 25 A 120 mOhms 30 V 3 V 60 nC - 55 C + 150 C 180 W Enhancement DTMOSIV-H Tube

Toshiba MOSFET Power MOSFET N-Channel 75A magazzino
5,13 €
3,06 €
Min: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 25 A 120 mOhms 30 V 3 V 60 nC - 55 C + 150 C 180 W Enhancement DTMOSIV-H Tube

Toshiba MOSFET Power MOSFET N-Channel 77A magazzino
4,94 €
3,02 €
2,30 €
2,09 €
1,98 €
Min: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 25 A 105 mOhms 30 V 2.5 V 40 nC - 55 C + 150 C 180 W Enhancement DTMOSIV-H Tube
Toshiba MOSFET DTMOSIV-High Speed 600V 88m (VGS=10V) 48A magazzino
5,68 €
3,72 €
2,73 €
2,43 €
2,18 €
Min: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 30.8 A 73 mOhms 30 V 3.5 V 65 nC - 55 C + 150 C 230 W Enhancement DTMOSIV-H Tube

Toshiba MOSFET DTMOSIV-H/S 600V 88mOhmmax(VGS=10V) 69A magazzino
5,81 €
3,62 €
Min: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 30.8 A 73 mOhms 30 V 3.5 V 65 nC - 55 C + 150 C 230 W Enhancement DTMOSIV-H Tube
Toshiba MOSFET TO-247-4L PD=230W 1MHz PWR MOSFET TRNS 46A magazzino
7,28 €
3,96 €
3,63 €
3,37 €
Min: 1
Mult.: 1
Si Through Hole TO-247-4 N-Channel 1 Channel 600 V 30.8 A 88 mOhms 30 V 3.5 V 65 nC - 55 C + 150 C 230 W Enhancement DTMOSIV-H Tube
Toshiba MOSFET DTMOSIV-High Speed 600V 40mOhmmax 60A magazzino
10,92 €
9,06 €
8,32 €
Min: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 61.8 A 33 mOhms 30 V 3.5 V 135 nC - 55 C + 150 C 400 W Enhancement DTMOSIV-H Tube
Toshiba MOSFET TO-247-4L PD=400W 1MHz PWR MOSFET TRNS 5A magazzino
13,79 €
7,97 €
7,77 €
Min: 1
Mult.: 1
Si Through Hole TO-247-4 N-Channel 1 Channel 600 V 61.8 A 40 mOhms 30 V 3.5 V 135 nC - 55 C + 150 C 400 W Enhancement DTMOSIV-H Tube
Toshiba MOSFET Power MOSFET N-Channel
9012/10/2026 previsto
4,88 €
2,55 €
2,24 €
1,97 €
Min: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 25 A 105 mOhms 30 V 2.5 V 40 nC - 55 C + 150 C 45 W Enhancement DTMOSIV-H Tube
Toshiba MOSFET TO-220SIS PD=45W 1MHz PWR MOSFET TRNS Tempo di consegna, se non a magazzino 24 settimane
4,72 €
2,47 €
2,24 €
1,89 €
Min: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 22 A 150 mOhms 30 V 3.5 V 50 nC - 55 C + 150 C 45 W Enhancement DTMOSIV-H Tube
Toshiba MOSFET POWER MOSFET TRANSISTOR DFN 8x8 PD=180W F=1MHZ Tempo di consegna, se non a magazzino 16 settimane
Nastrati
1,91 €
Min: 2.500
Mult.: 2.500
: 2.500
Si SMD/SMT DFN8x8-5 N-Channel 1 Channel 650 V 22 A 170 mOhms 30 V 3 V 50 nC - 55 C + 150 C 180 W Enhancement DTMOSIV-H Reel
Toshiba MOSFET X33 Pb-F POWER MOSFET TRANSISTOR DTMOS DFN8x8-OS PD=180W F=1MHZ Tempo di consegna, se non a magazzino 16 settimane
Nastrati
1,93 €
Min: 2.500
Mult.: 2.500
: 2.500
Si SMD/SMT DFN8x8-5 N-Channel 1 Channel 600 V 25 A 150 mOhms 30 V 3 V 60 nC - 55 C + 150 C 180 W Enhancement DTMOSIV-H Reel
Toshiba MOSFET 180W 1MHZ POWER MOSFET TRANSISTOR Tempo di consegna, se non a magazzino 16 settimane
Nastrati
1,91 €
Min: 2.500
Mult.: 2.500
: 2.500
Si SMD/SMT DFN8x8-5 DTMOSIV-H Reel