|
|
MOSFET HIGH POWER_NEW
- IPDD60R080G7XTMA1
- Infineon Technologies
-
1:
6,62 €
-
1.158A magazzino
|
Codice Mouser
726-IPDD60R080G7XTM1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
1.158A magazzino
|
|
Min: 1
Mult.: 1
:
1.700
|
|
|
Si
|
SMD/SMT
|
HDSOP-10
|
N-Channel
|
1 Channel
|
600 V
|
29 A
|
80 mOhms
|
20 V
|
3 V
|
42 nC
|
- 55 C
|
+ 150 C
|
174 W
|
Enhancement
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFET HIGH POWER NEW
- IPT60R028G7XTMA1
- Infineon Technologies
-
1:
16,47 €
-
1.395A magazzino
-
2.00028/01/2027 previsto
|
Codice Mouser
726-IPT60R028G7XTMA1
|
Infineon Technologies
|
MOSFET HIGH POWER NEW
|
|
1.395A magazzino
2.00028/01/2027 previsto
|
|
Min: 1
Mult.: 1
:
2.000
|
|
|
Si
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
600 V
|
75 A
|
28 mOhms
|
20 V
|
3 V
|
123 nC
|
- 55 C
|
+ 150 C
|
391 W
|
Enhancement
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFET HIGH POWER NEW
- IPT60R102G7XTMA1
- Infineon Technologies
-
1:
5,20 €
-
1.097A magazzino
|
Codice Mouser
726-IPT60R102G7XTMA1
|
Infineon Technologies
|
MOSFET HIGH POWER NEW
|
|
1.097A magazzino
|
|
Min: 1
Mult.: 1
:
2.000
|
|
|
Si
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
600 V
|
23 A
|
88 mOhms
|
20 V
|
3 V
|
34 nC
|
- 55 C
|
+ 150 C
|
141 W
|
Enhancement
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFET HIGH POWER_NEW
- IPDD60R125G7XTMA1
- Infineon Technologies
-
1:
5,05 €
-
143A magazzino
|
Codice Mouser
726-IPDD60R125G7XTM1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
143A magazzino
|
|
Min: 1
Mult.: 1
:
1.700
|
|
|
Si
|
SMD/SMT
|
HDSOP-10
|
N-Channel
|
1 Channel
|
600 V
|
20 A
|
125 mOhms
|
20 V
|
3 V
|
27 nC
|
- 55 C
|
+ 150 C
|
120 W
|
Enhancement
|
|
Reel, Cut Tape
|
|
|
|
MOSFET HIGH POWER_NEW
- IPT60R050G7XTMA1
- Infineon Technologies
-
1:
9,79 €
-
14A magazzino
-
2.00029/04/2027 previsto
|
Codice Mouser
726-IPT60R050G7XTMA1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
14A magazzino
2.00029/04/2027 previsto
|
|
Min: 1
Mult.: 1
:
2.000
|
|
|
Si
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
600 V
|
44 A
|
50 mOhms
|
20 V
|
3 V
|
68 nC
|
- 55 C
|
+ 150 C
|
245 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFET HIGH POWER_NEW
- IPT60R080G7XTMA1
- Infineon Technologies
-
1:
6,47 €
-
40A magazzino
|
Codice Mouser
726-IPT60R080G7XTMA1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
40A magazzino
|
|
Min: 1
Mult.: 1
:
2.000
|
|
|
Si
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
650 V
|
29 A
|
80 mOhms
|
30 V
|
3 V
|
42 nC
|
- 55 C
|
+ 150 C
|
167 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFET HIGH POWER_NEW
- IPDD60R150G7XTMA1
- Infineon Technologies
-
1:
4,39 €
-
48A magazzino
-
Fine vita
|
Codice Mouser
726-IPDD60R150G7XTM1
Fine vita
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
48A magazzino
|
|
Min: 1
Mult.: 1
:
1.700
|
|
|
Si
|
SMD/SMT
|
HDSOP-10
|
N-Channel
|
1 Channel
|
600 V
|
16 A
|
150 mOhms
|
20 V
|
3 V
|
23 nC
|
- 55 C
|
+ 150 C
|
95 W
|
Enhancement
|
|
Reel, Cut Tape
|
|
|
|
MOSFET HIGH POWER_NEW
- IPDD60R050G7XTMA1
- Infineon Technologies
-
1:
9,40 €
-
1.70027/05/2027 previsto
|
Codice Mouser
726-IPDD60R050G7XTM1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
1.70027/05/2027 previsto
|
|
Min: 1
Mult.: 1
:
1.700
|
|
|
Si
|
SMD/SMT
|
HDSOP-10
|
N-Channel
|
1 Channel
|
600 V
|
47 A
|
50 mOhms
|
20 V
|
3 V
|
68 nC
|
- 55 C
|
+ 150 C
|
278 W
|
Enhancement
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFET HIGH POWER_NEW
- IPDD60R190G7XTMA1
- Infineon Technologies
-
1:
3,23 €
-
3.40010/12/2026 previsto
|
Codice Mouser
726-IPDD60R190G7XTM1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
3.40010/12/2026 previsto
|
|
Min: 1
Mult.: 1
:
1.700
|
|
|
Si
|
SMD/SMT
|
HDSOP-10
|
N-Channel
|
1 Channel
|
600 V
|
13 A
|
190 mOhms
|
20 V
|
3 V
|
18 nC
|
- 55 C
|
+ 150 C
|
76 W
|
Enhancement
|
|
Reel, Cut Tape
|
|
|
|
MOSFET HIGH POWER NEW
- IPT60R125G7XTMA1
- Infineon Technologies
-
2.000:
1,70 €
-
Tempo di consegna, se non a magazzino 53 settimane
-
NRND
|
Codice Mouser
726-IPT60R125G7XTMA1
NRND
|
Infineon Technologies
|
MOSFET HIGH POWER NEW
|
|
Tempo di consegna, se non a magazzino 53 settimane
|
|
Min: 2.000
Mult.: 2.000
:
2.000
|
|
|
Si
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
600 V
|
20 A
|
108 mOhms
|
20 V
|
3 V
|
27 nC
|
- 55 C
|
+ 150 C
|
120 W
|
Enhancement
|
|
Reel
|
|