Risultati: 23
Seleziona Immagine Codice Produttore Descrizione Scheda dati Disponibilità Prezzi (EUR) Filtra i risultati nella tabella per prezzo unitario in base alla quantità. Qtà RoHS Modello ECAD Tecnologia Stile di montaggio Package/involucro Polarità transistor Numero di canali Vds - Tensione di rottura drain-source Id - corrente di drain continua Rds On - Drain-source sulla resistenza Vgs - Tensione gate-source Vgs th - Tensione di soglia gate-source Qg - Carica del gate Temperatura di lavoro minima Temperatura di lavoro massima Pd - Dissipazione di potenza Modalità canale Qualifica Nome commerciale Confezione
Infineon Technologies MOSFET N-Ch 650V 11.4A D2PAK-2 2.513A magazzino
Min: 1
Mult.: 1
: 1.000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 650 V 11.4 A 280 mOhms 20 V 3.5 V 41 nC - 40 C + 150 C 104.2 W Enhancement AEC-Q100 CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET N-Ch 600V 31A D2PAK-2 CoolMOS CPA 465A magazzino
Min: 1
Mult.: 1
: 1.000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 31 A 90 mOhms 20 V 2.5 V 80 nC - 40 C + 150 C 255 W Enhancement AEC-Q100 CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET N-Ch 650V 99.6A D2PAK-2 1.458A magazzino
Min: 1
Mult.: 1
: 1.000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 650 V 31.2 A 99 mOhms 20 V 3.5 V 118 nC - 40 C + 150 C 277.8 W Enhancement AEC-Q100 CoolMOS Reel, Cut Tape, MouseReel

Infineon Technologies MOSFET N-Ch 650V 31.2A TO247-3 579A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 31.2 A 99 mOhms 20 V 3.5 V 118 nC - 40 C + 150 C 277.8 W Enhancement AEC-Q100 CoolMOS Tube
Infineon Technologies MOSFET N-Ch 650V 6A D2PAK-2 918A magazzino
Min: 1
Mult.: 1
: 1.000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 650 V 6 A 594 mOhms 20 V 3.5 V 20 nC - 40 C + 150 C 62.5 W Enhancement AEC-Q100 CoolMOS Reel, Cut Tape, MouseReel

Infineon Technologies MOSFET N-Ch 650V 63.3A TO247-3 208A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 63.3 A 43 mOhms 20 V 3.5 V 270 nC - 40 C + 150 C 500 W Enhancement AEC-Q100 CoolMOS Tube
Infineon Technologies MOSFET N-Ch 600V 31A D2PAK-2 CoolMOS CPA 2.186A magazzino
Min: 1
Mult.: 1
: 1.000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 31 A 90 mOhms 20 V 2.5 V 80 nC - 40 C + 150 C 255 W Enhancement AEC-Q100 CoolMOS Reel, Cut Tape, MouseReel

Infineon Technologies MOSFET N-Ch 600V 60A TO247-3 CoolMOS CPA 232A magazzino
24025/09/2026 previsto
Min: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 60 A 45 mOhms 20 V 3 V 190 nC - 40 C + 150 C 431 W Enhancement AEC-Q100 CoolMOS Tube
Infineon Technologies MOSFET N-Ch 650V 31.2A TO220-3 2.480A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 31.2 A 110 mOhms 20 V 3 V 118 nC - 40 C + 150 C 277.8 W Enhancement AEC-Q100 CoolMOS Tube

Infineon Technologies MOSFET N-Ch 650V 43.3A TO247-3 1.200A magazzino
480In ordine
Min: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 43.3 A 72 mOhms 20 V 3.5 V 161 nC - 40 C + 150 C 391 W Enhancement AEC-Q100 CoolMOS Tube
Infineon Technologies MOSFET N-Ch 650V 57.2A D2PAK-2 775A magazzino
Min: 1
Mult.: 1
: 1.000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 650 V 17.5 A 171 mOhms 20 V 3.5 V 68 nC - 40 C + 150 C 151 W Enhancement AEC-Q100 CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET N-Ch 650V 11.4A D2PAK-2 10A magazzino
Min: 1
Mult.: 1
: 1.000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 650 V 11.4 A 280 mOhms 20 V 3.5 V 41 nC - 40 C + 150 C 104.2 W Enhancement AEC-Q100 CoolMOS Reel, Cut Tape, MouseReel

Infineon Technologies MOSFET AUTOMOTIVE_COOLMOS 267A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 31 A 90 mOhms 20 V 2.5 V 80 nC - 40 C + 150 C 255 W Enhancement AEC-Q101 CoolMOS Tube

Infineon Technologies MOSFET AUTOMOTIVE_COOLMOS 6A magazzino
48024/09/2026 previsto
Min: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 31 A 90 mOhms 20 V 2.5 V 80 nC - 40 C + 150 C 255 W Enhancement AEC-Q101 CoolMOS Tube
Infineon Technologies MOSFET N-Ch 650V 6A DPAK-2 292A magazzino
2.50009/09/2026 previsto
Min: 1
Mult.: 1
: 2.500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 650 V 6 A 594 mOhms 20 V 3.5 V 20 nC - 40 C + 150 C 62.5 W Enhancement AEC-Q100 CoolMOS Reel, Cut Tape, MouseReel

Infineon Technologies MOSFET N-Ch 650V 63.3A TO247-3 238A magazzino
24029/04/2027 previsto
Min: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 63.3 A 43 mOhms 20 V 3.5 V 270 nC - 40 C + 150 C 500 W Enhancement AEC-Q100 CoolMOS Tube

Infineon Technologies MOSFET N-Ch 650V 43.3A TO247-3 272A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 43.3 A 72 mOhms 20 V 3.5 V 161 nC - 40 C + 150 C 391 W Enhancement AEC-Q100 CoolMOS Tube

Infineon Technologies MOSFET N-Ch 650V 22.4A TO247-3 415A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 22.4 A 150 mOhms 20 V 3.5 V 86 nC - 40 C + 150 C 195.3 W Enhancement AEC-Q100 CoolMOS Tube

Infineon Technologies MOSFET N-Ch 650V 31.2A TO247-3
45610/06/2027 previsto
Min: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 31.2 A 99 mOhms 20 V 3.5 V 118 nC - 40 C + 150 C 277.8 W Enhancement AEC-Q100 CoolMOS Tube
Infineon Technologies MOSFET N-Ch 650V 99.6A D2PAK-2 Tempo di consegna, se non a magazzino 8 settimane
Min: 1.000
Mult.: 1.000
: 1.000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 650 V 31.2 A 99 mOhms 20 V 3.5 V 118 nC - 40 C + 150 C 277.8 W Enhancement AEC-Q100 CoolMOS Reel
Infineon Technologies MOSFET N-Ch 650V 57.2A D2PAK-2 Tempo di consegna, se non a magazzino 8 settimane
Min: 1
Mult.: 1
: 1.000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 650 V 17.5 A 171 mOhms 20 V 3.5 V 68 nC - 40 C + 150 C 151 W Enhancement AEC-Q100 CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET N-Ch 650V 6A DPAK-2 Tempo di consegna, se non a magazzino 24 settimane
Min: 2.500
Mult.: 2.500
: 2.500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 650 V 6 A 594 mOhms 20 V 3.5 V 20 nC - 40 C + 150 C 62.5 W Enhancement AEC-Q100 CoolMOS Reel
Infineon Technologies MOSFET N-Ch 650V 8.7A DPAK-2 Tempo di consegna, se non a magazzino 52 settimane
Min: 2.500
Mult.: 2.500
: 2.500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 650 V 8.7 A 420 mOhms 20 V 4 V 32 nC - 55 C + 175 C 83.3 W Enhancement AEC-Q100 CoolMOS Reel