700V CoolMOS™ P7 MOSFETs

Infineon Technologies 700V CoolMOS™ P7 MOSFETs feature a revolutionary technology for high voltage power MOSFETs. The 700V are designed according to the superjunction (SJ) principle and pioneered by Infineon. The latest 700V CoolMOS P7 are an optimized platform tailored to target cost sensitive applications in consumer markets like chargers, adapters, lighting, TVs and more. The new series provides all the benefits of a fast switching Superjunction MOSFET, combined with an excellent price/performance ratio and state of the art ease-of-use level. The technology meets highest efficiency standards and supports high power density, enabling customers going towards very slim designs.

Risultati: 13
Seleziona Immagine Codice Produttore Descrizione Scheda dati Disponibilità Prezzi (EUR) Filtra i risultati nella tabella per prezzo unitario in base alla quantità. Qtà RoHS Modello ECAD Tecnologia Stile di montaggio Package/involucro Polarità transistor Numero di canali Vds - Tensione di rottura drain-source Id - corrente di drain continua Rds On - Drain-source sulla resistenza Vgs - Tensione gate-source Vgs th - Tensione di soglia gate-source Qg - Carica del gate Temperatura di lavoro minima Temperatura di lavoro massima Pd - Dissipazione di potenza Modalità canale Nome commerciale Confezione
Infineon Technologies MOSFET CONSUMER 68.703A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 700 V 8.5 A 600 mOhms 16 V 2.5 V 10.5 nC - 40 C + 150 C 24.9 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET CONSUMER 4.860A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 700 V 8.5 A 490 mOhms 30 V 2.5 V 10.5 nC - 40 C + 150 C 24.9 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET CONSUMER 1.659A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 700 V 12.5 A 300 mOhms 30 V 2.5 V 16.4 nC - 40 C + 150 C 26.5 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET LOW POWER_NEW 8.376A magazzino
50021/10/2026 previsto
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 7 A 640 mOhms 20 V 2.5 V 17 nC - 55 C + 150 C 27 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET CONSUMER 32.809A magazzino
Min: 1
Mult.: 1
: 2.500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 700 V 4 A 1.15 Ohms 16 V 2.5 V 4.7 nC - 40 C + 150 C 22.7 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET CONSUMER 4.778A magazzino
Min: 1
Mult.: 1
: 3.000

Si SMD/SMT SOT-223-3 N-Channel 1 Channel 700 V 8.5 A 490 mOhms 16 V 2.5 V 10.5 nC - 40 C + 150 C 6.9 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET CONSUMER 37A magazzino
260.000In ordine
Min: 1
Mult.: 1
: 2.500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 700 V 12.5 A 300 mOhms 16 V 2.5 V 16.4 nC - 40 C + 150 C 59.5 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET CONSUMER 55A magazzino
25.000In ordine
Min: 1
Mult.: 1
: 2.500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 700 V 8.5 A 490 mOhms 16 V 2.5 V 10.5 nC - 40 C + 150 C 43.1 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET CONSUMER 4.613A magazzino
Min: 1
Mult.: 1
: 3.000

Si SMD/SMT SOT-223-3 N-Channel 1 Channel 700 V 4 A 1.15 Ohms 16 V 2.5 V 4.7 nC - 40 C + 150 C 6.2 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET CONSUMER 865A magazzino
12.00022/10/2026 previsto
Min: 1
Mult.: 1
: 3.000

Si SMD/SMT SOT-223-3 N-Channel 1 Channel 700 V 3 A 1.64 Ohms 16 V 2.5 V 3.8 nC - 40 C + 150 C 6 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET CONSUMER
12.47715/04/2027 previsto
Min: 1
Mult.: 1
: 2.500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 700 V 6 A 740 mOhms 16 V 2.5 V 6.8 nC - 40 C + 150 C 30.5 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET CONSUMER
14.898In ordine
Min: 1
Mult.: 1
: 3.000

Si SMD/SMT SOT-223-3 N-Channel 1 Channel 700 V 12.5 A 300 mOhms 16 V 2.5 V 16.4 nC - 40 C + 150 C 7.2 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET CONSUMER
2.50022/10/2026 previsto
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 700 V 12.5 A 300 mOhms 16 V 2.5 V 16.4 nC - 40 C + 150 C 26.5 W Enhancement CoolMOS Tube