SRAM for Data Acquisition

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SRAM for Data Acquisition

SRAM stands for static random-access memory, a kind of memory chip that uses flip-flop type latching circuitry to store by the bit. SRAM can use very little power when sitting idle for long periods, and thus is better suited for certain applications over other types of memory. Learn More

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Qtà RoHS Modello ECAD Dimensioni memoria
Organizzazione
Tempo di accesso
Frequenza di clock massima
Tipo di interfaccia
Tensione di alimentazione - Max.
Tensione di alimentazione - Min.
Corrente di alimentazione - Max
Temperatura di lavoro minima
Temperatura di lavoro massima
Stile di montaggio
Package/involucro
Confezione

ISSI SRAM 2Mb,High-Speed,Async,128K x 16,8ns/3.3v, or 10ns/2.4v-3.6v,44 Pin TSOP II, RoHS, Automotive temp, ECC
Scheda dati
73A magazzino
Min: 1
Mult.: 1

2 Mbit 128 k x 16 10 ns Parallel 3.6 V 2.4 V 50 mA - 40 C + 125 C SMD/SMT TSOP-44
ISSI SRAM 4Mb 128Kx36 200Mhz Sync SRAM 3.3v
Scheda dati
53A magazzino
Min: 1
Mult.: 1

4 Mbit 128 k x 36 3.1 ns 200 MHz Parallel 3.465 V 3.135 V 210 mA - 40 C + 85 C SMD/SMT TQFP-100 Tube
ISSI SRAM 4Mb 256Kx18 200Mhz Sync SRAM 3.3v
Scheda dati
24A magazzino
Min: 1
Mult.: 1

4 Mbit 256 k x 18 3.1 ns 200 MHz Parallel 3.465 V 3.135 V 210 mA - 40 C + 85 C SMD/SMT TQFP-100 Tube
ISSI SRAM 8Mb,Pipeline,Sync,512K x 18,200Mhz,3.3v I/O,100 Pin TQFP, 3CE, RoHS
Scheda dati
15A magazzino
Min: 1
Mult.: 1

9 Mbit 512 k x 18 3.1 ns 200 MHz Parallel 3.465 V 3.135 V 275 mA - 40 C + 85 C SMD/SMT TQFP-100 Tube
ISSI SRAM 8M (512Kx18) 200MHz Sync SRAM 3.3v
Scheda dati
24A magazzino
7220/08/2026 previsto
Min: 1
Mult.: 1

9 Mbit 512 k x 18 3.1 ns 200 MHz Parallel 3.465 V 3.135 V 280 mA - 40 C + 85 C SMD/SMT TQFP-100 Tray
ISSI SRAM 1Mb, Low Power/Power Saver,Async,128K x 8,45ns,2.2v-3.6v,32 Pin sTSOP I (8x13.4mm), RoHS
Scheda dati
234A magazzino
Min: 1
Mult.: 1

1 Mbit 128 k x 8 45 ns Parallel 3.6 V 2.2 V 26 mA - 40 C + 85 C SMD/SMT TSOP-32 Tray
ISSI SRAM 18Mb,Pipeline,Sync,512K x 36,200MHz,2.5V I/O,100 Pin TQFP,RoHS
Scheda dati
10A magazzino
Min: 1
Mult.: 1

18 Mbit 512 k x 36 3 ns 200 MHz Parallel 2.625 V 2.375 V 220 mA - 40 C + 85 C SMD/SMT TQFP-100
ISSI IS66WVC2M16ECLL-7010BLI
ISSI SRAM 32Mb,Pseudo SRAM,Asynch/Page/Burst CRAM 1.5, 2M x 16,70ns,1.7v-1.95v,54 Ball BGA (6x8 mm), RoHS
Scheda dati
480A magazzino
Min: 1
Mult.: 1

32 Mbit 2 M x 16 70 ns Parallel 1.95 V 1.7 V 30 mA - 40 C + 85 C SMD/SMT
ISSI IS66WVE4M16ECLL-70BLI
ISSI SRAM 64Mb Pseudo SRAM 4Mx16 70ns
Scheda dati
551A magazzino
Min: 1
Mult.: 1

64 Mbit 4 M x 16 70 ns Parallel 1.95 V 1.7 V 30 mA - 40 C + 85 C SMD/SMT Reel

ISSI SRAM 1Mb 5V 15ns 64K x 16 Async SRAM
Scheda dati
101A magazzino
Min: 1
Mult.: 1

1 Mbit 64 k x 16 15 ns Parallel 5.5 V 4.5 V 50 mA - 40 C + 125 C SMD/SMT TSOP-44 Tray
ISSI SRAM 18M (1Mx18) 200MHz Sync SRAM 3.3v
Scheda dati
50A magazzino
Min: 1
Mult.: 1

18 Mbit 1 M x 18 3.1 ns 200 MHz Parallel 3.465 V 3.135 V 475 mA - 40 C + 85 C SMD/SMT TQFP-100 Tray
ISSI SRAM 9Mb,Pipeline,Sync,256K x 36,166Mhz,3.3v I/O,100 Pin TQFP, RoHS, Automotive temp
Scheda dati
58A magazzino
Min: 1
Mult.: 1

9 Mbit 256 k x 36 3.5 ns 166 MHz Parallel 3.465 V 3.135 V 300 mA - 40 C + 125 C SMD/SMT TQFP-100 Tray
ISSI SRAM 256K 32Kx8 25ns 5V Async SRAM
Scheda dati
298A magazzino
Min: 1
Mult.: 1

256 kbit 32 k x 8 25 ns Parallel 5.5 V 4.5 V 30 mA - 40 C + 125 C SMD/SMT SOP-28 Tube
ISSI SRAM 8Mb 512Kx16 10ns LP Async SRAM A-Temp
Scheda dati
78A magazzino
Min: 1
Mult.: 1

8 Mbit 512 k x 16 10 ns Parallel 3.6 V 2.4 V 135 mA - 40 C + 125 C SMD/SMT TSOP-48 Tray
ISSI IS62WV25616EALL-55TLI
ISSI SRAM 4Mb Low Pwr/Pwr Svr Async 256Kx16 55ns
Scheda dati
68A magazzino
Min: 1
Mult.: 1

4 Mbit 256 k x 16 55 ns Parallel 2.2 V 1.65 V 22 mA - 40 C + 85 C SMD/SMT
ISSI IS62WV12816FBLL-45TLI
ISSI SRAM 2Mb, Low Power/Power Saver,Async,128K x 16,45ns,2.2v-3.6v,44 Pin TSOP II, RoHS
Scheda dati
113A magazzino
Min: 1
Mult.: 1

2 Mbit 128 k x 16 45 ns Parallel 3.6 V 2.2 V 26 mA - 40 C + 85 C SMD/SMT mBGA-48 Tray
ISSI IS66WVE2M16ECLL-70BLI
ISSI SRAM 32Mb,Pseudo SRAM 2M x 16 70ns
Scheda dati
215A magazzino
Min: 1
Mult.: 1

32 Mbit 2 M x 16 70 ns Parallel 1.95 V 1.7 V 30 mA - 40 C + 85 C SMD/SMT
Microchip Technology SRAM 2Mbit serial SRAM, 1.7V-3.6V
Scheda dati
558A magazzino
Min: 1
Mult.: 1

2 Mbit 256 k x 8 143 MHz SDI, SPI, SQI 3.6 V 1.7 V 10 mA - 40 C + 85 C Through Hole PDIP-8 Tube
Microchip Technology SRAM 2Mbit serial SRAM, 1.7V-3.6V
Scheda dati
867A magazzino
Min: 1
Mult.: 1

2 Mbit 256 k x 8 143 MHz SDI, SPI, SQI 3.6 V 1.7 V 10 mA - 40 C + 85 C SMD/SMT SOIC-8 Tube
Microchip Technology SRAM 4Mbit serial SRAM, 1.7V-3.6V
Scheda dati
1.193A magazzino
Min: 1
Mult.: 1

4 Mbit 256 k x 8 143 MHz SDI, SPI, SQI 3.6 V 1.7 V 20 mA - 40 C + 85 C SMD/SMT TSSOP-8 Tube
Microchip Technology SRAM 2Mbit serial SRAM, 2.2V-3.6V with Battery Backup
Scheda dati
449A magazzino
Min: 1
Mult.: 1

2 Mbit 256 k x 8 143 MHz SDI, SPI, SQI 3.6 V 2.2 V 10 mA - 40 C + 85 C Through Hole PDIP-14 Tube
Microchip Technology SRAM 2Mbit serial SRAM, 2.2V-3.6V with Battery Backup
Scheda dati
545A magazzino
Min: 1
Mult.: 1

2 Mbit 256 k x 8 143 MHz SDI, SPI, SQI 3.6 V 2.2 V 10 mA - 40 C + 85 C SMD/SMT Tube
Microchip Technology SRAM 4Mbit serial SRAM, 2.2V-3.6V with Battery Backup
Scheda dati
393A magazzino
Min: 1
Mult.: 1

4 Mbit 512 k x 8 143 MHz SDI, SPI, SQI 3.6 V 2.2 V 20 mA - 40 C + 85 C Through Hole PDIP-14 Tube
Microchip Technology SRAM 4Mbit serial SRAM, 2.2V-3.6V with Battery Backup
Scheda dati
324A magazzino
Min: 1
Mult.: 1

4 Mbit 512 k x 8 143 MHz SDI, SPI, SQI 3.6 V 2.2 V 20 mA - 40 C + 85 C SMD/SMT SOIC-14 Tube
Microchip Technology SRAM 4Mbit serial SRAM, 1.7V-3.6V
Scheda dati
458A magazzino
Min: 1
Mult.: 1

4 Mbit 256 k x 8 143 MHz SDI, SPI, SQI 3.6 V 1.7 V 20 mA - 40 C + 85 C Through Hole PDIP-8 Tube