SRAM for Data Acquisition

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SRAM for Data Acquisition

SRAM stands for static random-access memory, a kind of memory chip that uses flip-flop type latching circuitry to store by the bit. SRAM can use very little power when sitting idle for long periods, and thus is better suited for certain applications over other types of memory. Learn More

Risultati: 488
Seleziona Immagine Codice Produttore Descrizione Scheda dati Disponibilità Prezzi (EUR) Filtra i risultati nella tabella per prezzo unitario in base alla quantità. Qtà RoHS Modello ECAD Dimensioni memoria Organizzazione Tempo di accesso Frequenza di clock massima Tipo di interfaccia Tensione di alimentazione - Max. Tensione di alimentazione - Min. Corrente di alimentazione - Max Temperatura di lavoro minima Temperatura di lavoro massima Stile di montaggio Package/involucro Confezione
Microchip Technology SRAM 16k, 5.0V EERAM EXT 5A magazzino
Min: 1
Mult.: 1

16 kbit 2 k x 8 400 ns 1 MHz I2C 5.5 V 4.5 V 400 uA - 40 C + 125 C SMD/SMT Tube
Microchip Technology SRAM 1024K 1.8V SPI SERIAL SRAM SQI EXT 154A magazzino
Min: 1
Mult.: 1

1 Mbit 128 k x 8 32 ns 16 MHz SDI, SPI, SQI 2.2 V 1.7 V 10 mA - 40 C + 125 C Through Hole PDIP-8 Tube
ISSI SRAM 8Mb 256Kx32 10ns Async SRAM 929A magazzino
Min: 1
Mult.: 1

8 Mbit 256 k x 32 10 ns Parallel 3.6 V 2.4 V 95 mA - 40 C + 85 C SMD/SMT BGA-90 Tray

Microchip Technology SRAM 256K 32K X 8 2.7V SERIAL SRAM EXT 192A magazzino
Min: 1
Mult.: 1

256 kbit 32 k x 8 32 ns 20 MHz SPI 3.6 V 2.7 V 10 mA - 40 C + 125 C Through Hole PDIP-8 Tube
Microchip Technology SRAM 1024K 1.8V SPI SERIAL SRAM SQI EXT 55A magazzino
Min: 1
Mult.: 1

1 Mbit 128 k x 8 32 ns 16 MHz SDI, SPI, SQI 2.2 V 1.7 V 10 mA - 40 C + 125 C SMD/SMT SOIC-8 Tube
Microchip Technology SRAM 512K 2.5V SPI SERIAL SRAM SQI EXT 204A magazzino
Min: 1
Mult.: 1

512 kbit 64 k x 8 32 ns 16 MHz SDI, SPI, SQI 5.5 V 2.5 V 10 mA - 40 C + 125 C Through Hole PDIP-8 Tube
Renesas Electronics SRAM 256Kx36 STD-PWR 2.5V DUAL PORT RAM 7A magazzino
Min: 1
Mult.: 1
No
9 Mbit 256 k x 36 3.6 ns 166 MHz Parallel 2.6 V 2.4 V 510 mA - 40 C + 85 C SMD/SMT CABGA-256 Tray

ISSI SRAM 16Mb,High-Speed,Async,1Mbx16,8ns/3.3v,or 10ns/2.4v-3.6v, 48 Pin TSOP I, RoHS 4.116A magazzino
Min: 1
Mult.: 1

16 Mbit 1 M x 16 10 ns Parallel 3.6 V 2.4 V 95 mA - 40 C + 85 C SMD/SMT TSOP-48 Tray

ISSI SRAM 8M (512Kx16) 10ns Async SRAM 3.3v 1.798A magazzino
Min: 1
Mult.: 1
: 1.000

8 Mbit 512 k x 16 10 ns Parallel 3.6 V 2.4 V 95 mA - 40 C + 85 C SMD/SMT TSOP-44 Reel, Cut Tape, MouseReel
ISSI SRAM 16Mb Low Pwr/Pwr Svr Async 1Mx16 45ns 15.985A magazzino
Min: 1
Mult.: 1

16 Mbit 1 M x 16 45 ns Parallel 3.6 V 2.2 V 12 mA - 40 C + 85 C SMD/SMT BGA-48

ISSI SRAM 2Mb 128Kx16 55ns Async SRAM 5.338A magazzino
Min: 1
Mult.: 1
: 1.000

2 Mbit 128 k x 16 55 ns Parallel 3.6 V 2.5 V 3 mA - 40 C + 85 C SMD/SMT TSOP-44 Reel, Cut Tape, MouseReel
Renesas Electronics SRAM 256Kx36 STD-PWR 2.5V DUAL PORT RAM 31A magazzino
Min: 1
Mult.: 1
No
9 Mbit 256 k x 36 4.2 ns 133 MHz Parallel 2.6 V 2.4 V 450 mA - 40 C + 85 C SMD/SMT CABGA-256 Tray
Microchip Technology SRAM 1024K, 1.8V SPI SERIAL SRAM, SQI 100A magazzino
Min: 1
Mult.: 1

1 Mbit 128 k x 8 25 ns 20 MHz SDI, SPI, SQI 2.2 V 1.7 V 10 mA - 40 C + 85 C Through Hole PDIP-8 Tube
Microchip Technology SRAM 512K 1.8V SPI SERIAL SRAM SQI EXT 198A magazzino
Min: 1
Mult.: 1

512 kbit 64 k x 8 32 ns 16 MHz SDI, SPI, SQI 2.2 V 1.7 V 10 mA - 40 C + 125 C SMD/SMT SOIC-8 Tube
Renesas Electronics SRAM 32Kx8, 256K, 3.3V DUAL-PORT RAM 1A magazzino
Min: 1
Mult.: 1

256 kbit 32 k x 8 35 ns Parallel 3.6 V 3 V 155 mA - 40 C + 85 C SMD/SMT TQFP-80 Tray
Renesas Electronics SRAM 64Kx16 ASYNCHRONOUS 5.0V STATIC RAM 17A magazzino
1.50008/10/2026 previsto
Min: 1
Mult.: 1
: 1.500

1 Mbit 64 k x 16 20 ns Parallel 5.5 V 4.5 V 170 mA - 40 C + 85 C SMD/SMT TSOP-44 Reel, Cut Tape, MouseReel
Renesas Electronics SRAM 128Kx36 SYNC 3.3V PIPELINED BURST SRAM 64A magazzino
Min: 1
Mult.: 1

4 Mbit 128 k x 36 3.3 ns 183 MHz Parallel 3.465 V 3.135 V 350 mA - 40 C + 85 C SMD/SMT TQFP-100 Tray
ISSI SRAM 64Mb,Pseudo SRAM,Asynch/Page, 4M x 16,70ns,VDD 2.7V-3.6V, VDDQ 2.7V-3.6V,48 Ball BGA (6x8 mm), RoHS 4.005A magazzino
Min: 1
Mult.: 1
: 2.500

64 Mbit 4 M x 16 70 ns Parallel 3.6 V 2.7 V 30 mA - 40 C + 85 C SMD/SMT TFBGA-48 Reel, Cut Tape, MouseReel
ISSI SRAM 8M, 2.4-3.6V, 10ns 512Kx16 Asych SRAM 1.768A magazzino
Min: 1
Mult.: 1

8 Mbit 512 k x 16 10 ns Parallel 3.6 V 2.4 V 50 mA - 40 C + 85 C SMD/SMT BGA-48 Tray

Renesas Electronics SRAM 128Kx8 ASYNCHRONOUS 5.0V STATIC RAM 340A magazzino
Min: 1
Mult.: 1

1 Mbit 128 k x 8 15 ns Parallel 5.5 V 4.5 V 155 mA - 40 C + 85 C SMD/SMT SOJ-32 Tube
Renesas Electronics SRAM 128Kx36 Synch 3.3V PipeLined Burst SRAM 91A magazzino
Min: 1
Mult.: 1

4 Mbit 128 k x 36 3.5 ns 166 MHz Parallel 3.465 V 3.135 V 330 mA - 40 C + 85 C SMD/SMT CABGA-165 Tray
Renesas Electronics SRAM 512Kx8 ASYNCHRONOUS 3.3V CMOS SRAM 135A magazzino
Min: 1
Mult.: 1

4 Mbit 512 k x 8 15 ns Parallel 3.6 V 3 V 145 mA - 40 C + 85 C SMD/SMT TSOP-44 Tray
ISSI SRAM 8Mb, SerialRAM, 2.7V-3.6V, 104MHz, 8 pin SOIC 150 mil, RoHS 4.490A magazzino
Min: 1
Mult.: 1
: 3.000

8 Mbit 1 M x 8 7 ns 104 MHz SPI 3.6 V 2.7 V 15 mA - 40 C + 85 C SMD/SMT SOIC-8 Reel, Cut Tape

ISSI SRAM 4Mb,High-Speed/Low Power,Async,256K x 16,8ns/3.3v +/-10%,or 10ns/2.4v-3.6v,44 Pin TSOP II, RoHS 238A magazzino
4.458In ordine
Min: 1
Mult.: 1

4 Mbit 256 k x 16 10 ns Parallel 3.6 V 2.4 V 25 mA - 40 C + 85 C SMD/SMT TSOP-44

ISSI SRAM 16Mb,High-Speed,Async,2Mbx8,10ns, 2.4v-3.6v, 44 Pin TSOP II, RoHS 461A magazzino
Min: 1
Mult.: 1

16 Mbit 2 M x 8 10 ns Parallel 3.6 V 2.4 V 90 mA - 40 C + 85 C SMD/SMT TSOP-44