OptiMOS™ 6 150 V Power MOSFETs

Infineon Technologies OptiMOS™ 6 150V Power MOSFETs feature industry-leading low R_DS(on), improved switching performance, and excellent EMI behavior, which contribute to unparalleled efficiency, power density, and reliability. The OptiMOS 6 technology offers significant improvements over its predecessor, OptiMOS 5, including up to 41% lower R_DS(on), 20% lower FOM_g, and 17% lower FOM_gd. Additionally, these MOSFETs exhibit high avalanche ruggedness and a maximum junction temperature of +175°C, ensuring robust and stable operation in demanding environments. With a wide package portfolio, Infineon OptiMOS™ 6 150V Power MOSFETs are designed to meet the stringent requirements of both high and low-switching frequency applications, providing enhanced system reliability and a longer lifetime.