UF3C SiC FETs

onsemi UF3C High-Performance SiC FETs are cascode Silicon Carbide (SiC) products that co-package high-performance G3 SiC JFETs with a cascode-optimized Si MOSFET to produce a standard gate drive SiC device. This series exhibits ultra-low gate charge and is excellent for switching inductive loads and applications requiring a standard gate drive. The onsemi UF3C SiC FETs are available in 650V, 1200V, and 1700V versions and are offered in D2PAK-3, D2PAK-7, D2PAK-7L, TO-247-3L, TO-247-4L, and TO-220-3L packages.

Risultati: 23
Seleziona Immagine Codice Produttore Descrizione Scheda dati Disponibilità Prezzi (EUR) Filtra i risultati nella tabella per prezzo unitario in base alla quantità. Qtà RoHS Modello ECAD Stile di montaggio Package/involucro Numero di canali Vds - Tensione di rottura drain-source Id - corrente di drain continua Rds On - Drain-source sulla resistenza Vgs - Tensione gate-source Vgs th - Tensione di soglia gate-source Qg - Carica del gate Temperatura di lavoro minima Temperatura di lavoro massima Pd - Dissipazione di potenza Modalità canale Qualifica Nome commerciale
onsemi MOSFET SiC 650V/40MOSICFETG3TO247-4 3.278A magazzino
17,03 €
10,19 €
Min: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 650 V 54 A 52 mOhms - 25 V, + 25 V 4 V 43 nC - 55 C + 175 C 326 W Enhancement AEC-Q101 SiC FET
onsemi MOSFET SiC 1700V/400MOSICFETG3TO263-7 26A magazzino
Nastro continuo
10,01 €
7,08 €
5,25 €
4,97 €
Nastrati
4,97 €
Min: 1
Mult.: 1
Max.: 800
: 800
SMD/SMT D2PAK-7 1 Channel 1.7 kV 7.6 A 410 mOhms - 25 V, + 25 V 6 V 23.1 nC - 55 C + 175 C 100 W Enhancement SiC FET
onsemi MOSFET SiC 1200V/40MOSICFETG3TO247-3 204A magazzino
25,27 €
18,86 €
18,79 €
16,85 €
Min: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 1.2 kV 65 A 45 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 429 W Enhancement SiC FET
onsemi MOSFET SiC 650V/80MOSICFETG3TO247 626A magazzino
10,59 €
6,06 €
5,62 €
5,38 €
Min: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 650 V 31 A 100 mOhms - 12 V, + 12 V 6 V 51 nC - 55 C + 175 C 190 W Enhancement AEC-Q101 SiC FET
onsemi MOSFET SiC 1200V/150MOSICFETG3TO2 345A magazzino
Nastro continuo
10,98 €
6,30 €
5,81 €
5,50 €
Nastrati
5,50 €
Min: 1
Mult.: 1
: 800
SMD/SMT D2PAK-7 1 Channel 1.2 kV 17 A 150 mOhms - 25 V, + 25 V 4.4 V 25.7 nC - 55 C + 175 C 136 W Enhancement SiC FET
onsemi MOSFET SiC 650V/80MOSICFETG3TO247-4 583A magazzino
11,09 €
6,23 €
5,78 €
5,56 €
Min: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 650 V 31 A 100 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 190 W Enhancement AEC-Q101 SiC FET
onsemi MOSFET SiC 1200V/80MOSICFETG3TO24 1.142A magazzino
18,20 €
11,10 €
Min: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 1.2 kV 33 A 100 mOhms - 25 V, + 25 V 6 V 51 nC - 55 C + 175 C 254.2 W Enhancement AEC-Q101 SiC FET
onsemi MOSFET SiC 1200V/80MOSICFETG3TO26 618A magazzino
Nastro continuo
16,54 €
10,37 €
10,07 €
Nastrati
9,68 €
Min: 1
Mult.: 1
: 800
SMD/SMT D2PAK-7 1 Channel 1.2 kV 28.8 A 85 mOhms - 25 V, + 25 V 6 V 23 nC - 55 C + 175 C 190 W Enhancement SiC FET
onsemi MOSFET SiC 650V/30MOSICFETG3TO220-3 902A magazzino
22,07 €
14,19 €
Min: 1
Mult.: 1
Through Hole TO-220-3 1 Channel 650 V 85 A 35 mOhms - 25 V, + 25 V 5 V 51 nC - 55 C + 175 C 441 W Enhancement AEC-Q101 SiC FET
onsemi MOSFET SiC 650V/40MOSICFETG3TO247 1.166A magazzino
13,12 €
9,95 €
9,39 €
Min: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 650 V 54 A 42 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 326 W Enhancement AEC-Q101 SiC FET
onsemi MOSFET SiC 1200V/40MOSICFETG3TO24 610A magazzino
25,38 €
16,85 €
Min: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 65 A 45 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 429 W Enhancement AEC-Q101 SiC FET
onsemi MOSFET SiC 650V/80MOSICFETG3TO220 475A magazzino
10,31 €
5,94 €
5,50 €
5,12 €
Min: 1
Mult.: 1
Through Hole TO-220-3 1 Channel 650 V 31 A 100 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 190 W Enhancement AEC-Q101 SiC FET
onsemi MOSFET SiC 650V/80MOSICFETG3TO263-3 1.252A magazzino
Nastro continuo
10,13 €
5,84 €
5,31 €
5,02 €
Nastrati
5,02 €
Min: 1
Mult.: 1
: 800
SMD/SMT D2PAK-3 (TO-263-3) 1 Channel 650 V 25 A 100 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 115 W Enhancement AEC-Q101 SiC FET
onsemi MOSFET SiC 650V/80MOSICFETG3TO263-7 199A magazzino
Nastro continuo
11,59 €
6,73 €
6,28 €
5,94 €
Nastrati
5,94 €
Min: 1
Mult.: 1
: 800
SMD/SMT D2PAK-7 1 Channel 650 V 27 A 85 mOhms - 25 V, + 25 V 6 V 23 nC - 55 C + 175 C 136.4 W Enhancement SiC FET
onsemi MOSFET SiC 1200V/400MOSICFETG3TO263-7 718A magazzino
80008/01/2027 previsto
Nastro continuo
7,96 €
4,36 €
4,01 €
3,78 €
Nastrati
3,78 €
Min: 1
Mult.: 1
: 800
SMD/SMT D2PAK-7 1 Channel 1.2 kV 5.9 A 410 mOhms - 25 V, + 25 V 6 V 22.5 nC - 55 C + 175 C 100 W Enhancement SiC FET
onsemi MOSFET SiC 1200V/80MOSICFETG3TO247-4 641A magazzino
18,21 €
11,11 €
Min: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 33 A 100 mOhms - 25 V, + 25 V 6 V 51 nC - 55 C + 175 C 254.2 W Enhancement AEC-Q101 SiC FET
onsemi MOSFET SiC 1700V/400MOSICFETG3TO2 266A magazzino
60018/12/2026 previsto
10,18 €
5,74 €
5,31 €
5,04 €
Min: 1
Mult.: 1
Max.: 600
Through Hole TO-247-3 1 Channel 1.7 kV 7.6 A 1.07 Ohms - 25 V, + 25 V 6 V 27.5 nC - 55 C + 175 C 100 W Enhancement AEC-Q101 SiC FET
onsemi MOSFET SiC 1200V/150MOSICFETG3TO247-4 63A magazzino
12,01 €
6,71 €
6,49 €
Min: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 18.4 A 330 mOhms - 25 V, + 25 V 3.5 V 25.7 nC - 55 C + 175 C 166.7 W Enhancement AEC-Q101 SiC FET
onsemi MOSFET SiC 650V/30MOSICFETG3TO247 62A magazzino
23,23 €
14,28 €
Min: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 650 V 85 A 35 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 441 W Enhancement AEC-Q101 SiC FET
onsemi MOSFET SiC 650V/30MOSICFETG3TO247-4
1.20004/11/2026 previsto
23,29 €
18,64 €
16,13 €
Min: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 650 V 85 A 35 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 441 W Enhancement AEC-Q101 SiC FET
onsemi MOSFET SiC 650V/40MOSICFETG3TO220-3
1.00026/10/2026 previsto
17,54 €
10,51 €
10,03 €
Min: 1
Mult.: 1
Through Hole TO-220-3 1 Channel 650 V 54 A 52 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 326 W Enhancement AEC-Q101 SiC FET
onsemi MOSFET SiC 1200V/400MOSICFETG3TO247-3
30015/01/2027 previsto
9,98 €
6,81 €
5,68 €
5,06 €
Min: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 1.2 kV 7.6 A 1.07 Ohms - 25 V, + 25 V 6 V 27.5 nC - 55 C + 175 C 100 W Enhancement AEC-Q101 SiC FET
onsemi MOSFET SiC 650V/30MOSICFETG3TO263-3 Tempo di consegna, se non a magazzino 52 settimane
Nastro continuo
21,73 €
14,70 €
Nastrati
14,70 €
Min: 1
Mult.: 1
: 800
SMD/SMT D2PAK-3 (TO-263-3) 1 Channel 650 V 65 A 27 mOhms - 25 V, + 25 V 4 V 51 nC - 25 C + 175 C 242 W Enhancement AEC-Q101 SiC FET