Freescale MRFE6S9125 Lateral
N-Channel RF Power MOSFETThe Freescale MRF8S9200 Lateral N-Channel RF Power MOSFET is designed for CDMA base station applications with frequencies from 920 to 960 MHz. Features include that it is characterized with series equivalent large-signal impedance parameters and common source S-parameters, is internally matched for ease of use, has integrated ESD protection, and has a greater negative gate-source voltage range for improved Class C operation. It can be used in Class AB and Class C for all typical cellular base station modulation formats.
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- N-CDMA Application
- Typical Single-Carrier N-CDMA Performance @ 880 MHz, VDD = 28 Volts, IDQ = 950 mA, Pout = 27 Watts Avg., IS -95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF
- Power Gain - 20.2 dB
- Drain Efficiency - 31%
- ACPR @ 750 kHz Offset = -45.7 dBc in 30 kHz Bandwidth
- Capable of Handling 10:1 VSWR, @ 32 VDC, 880 MHz, 3 dB Overdrive, Designed for Enhanced Ruggedness
- GSM EDGE Application
- Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 700 mA, Pout = 60 Watts Avg., Full Frequency Band (865-960 MHz or 920-960 MHz)
- Power Gain - 20 dB
- Drain Efficiency - 40%
- Spectral Regrowth @ 400 kHz Offset = -63 dBc
- Spectral Regrowth @ 600 kHz Offset = -78 dBc
- EVM - 1.8% rms
- GSM Application
- Typical GSM Performance: VDD = 28 Volts, IDQ = 700 mA, Pout = 125 Watts, Full Frequency Band (920-960 MHz)
- Power Gain - 19 dB
- Drain Efficiency - 62%
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