Everspin Technologies 256Kb Parallel MRAM
Everspin Technologies MR256A08B / MR256D08B Parallel Magnetoresistive Random Access Memory (MRAM) features 262,144-bit devices organized as 32,768 words of 8 bits. The modules offer fast, SRAM-compatible read/write timing with unlimited endurance, and the data is non-volatile for >20 years at temperature. Everspin Technologies MR256A08B / MR256D08B Parallel MRAM has a 3.3V power supply. Both series provide an ideal memory solution for applications that must permanently store and retrieve critical data and programs quickly.
Features
- MR256A08B
- 32K x 8 MRAM
- Fast 35ns read/write cycle
- Native non-volatility
- Packages compatible with similar low-power SRAM and other non-volatile RAM products
- TSOP2 - small footprint 400-mil, 33-lead plastic small-outline
- BGA - 48-pin package
- SOIC - 32-lead package
- Temperature range
- 0°C to +70°C commercial
- -40°C to +85°C industrial
- MR256D08B
- Dual Supply 32K x 8 MRAM
- +3.3V power supply
- I/O voltage range supports wide 1.65 to 3.6V interfaces
- Fast 45ns read/write cycle
- 48-pin BGA package, 8mm x 8mm with 0.75mm ball centers
- 0°C to +70°C commercial temperature range
- Both variants
- 3.3V power supply
- Data always non-volatile for >20 years at temperature
- SRAM compatible timing
- Unlimited read and write endurance
MR256A08B Block Diagram
MR256D08B Block Diagram
Related Products
Everspin Technologies Magnetoresistive Random Access Memory (MRAM)
Delivers significantly long data retention of >20 years and unlimited endurance.
Pubblicato: 2019-04-09
| Aggiornato: 2023-10-13