- 40 C Tray DRAM

Risultati: 406
Seleziona Immagine Codice Produttore Descrizione Scheda dati Disponibilità Prezzi (EUR) Filtra i risultati nella tabella per prezzo unitario in base alla quantità. Qtà RoHS Modello ECAD Tipo Dimensioni memoria Larghezza bus dati Frequenza di clock massima Package/involucro Organizzazione Tempo di accesso Tensione di alimentazione - Min. Tensione di alimentazione - Max. Temperatura di lavoro minima Temperatura di lavoro massima Serie Confezione
Kingston DRAM 16Gb 200 ball LPDDR4 4266MHz itemp -40c to 95c 5A magazzino
Min: 1
Mult.: 1
Max.: 100

SDRAM - LPDDR4 16 GB 16 bit 2.133 GHz BGA-200 1024 M x 16 1.7 V 1.9 V - 40 C + 95 C eMMC Tray
AP Memory DRAM IoT RAM 128Mb OPI (x8) DDR 133MHz, 3V, Ind. Temp., BGA24 6.168A magazzino
3.71027/08/2026 previsto
Min: 1
Mult.: 1

PSRAM (Pseudo SRAM) 128 Mbit 8 bit 133 MHz BGA-24 16 M x 8 5.5 ns 2.7 V 3.6 V - 40 C + 85 C IoT RAM Tray
AP Memory DRAM IoT RAM 64Mb OPI (x8) DDR 133MHz, 3V, Ind. Temp., BGA24 8.621A magazzino
Min: 1
Mult.: 1

PSRAM (Pseudo SRAM) 64 Mbit 8 bit 133 MHz BGA-24 8 M x 8 5.5 ns 2.7 V 3.6 V - 40 C + 85 C IoT RAM Tray
SMARTsemi DRAM DRAM DDR4 4GB 256MX16 2666Mbps 1.2V 96-FBGA Industrial 396A magazzino
Min: 1
Mult.: 1

SDRAM - DDR4 4 Gbit 16 bit 1.333 GHz FBGA-96 256 M x 16 1.14 V 1.26 V - 40 C + 85 C KTDM Tray
AP Memory DRAM IoT RAM 512Mb OPI (x8) DDR 200MHz, 1.8V, Ind. Temp., BGA24 829A magazzino
Min: 1
Mult.: 1

PSRAM (Pseudo SRAM) 512 Mbit 8 bit 200 MHz BGA-24 64 M x 8 1.62 V 1.98 V - 40 C + 85 C IoT RAM Tray
AP Memory DRAM IoT RAM 256Mb OPI (x8) DDR 200MHz, 1.8V, Ind. Temp., BGA24 1.927A magazzino
Min: 1
Mult.: 1

PSRAM (Pseudo SRAM) 256 Mbit 8 bit 200 MHz BGA-24 32 M x 8 6.5 ns 1.62 V 1.98 V - 40 C + 85 C IoT RAM Tray
Infineon Technologies DRAM SPCM 1.635A magazzino
Min: 1
Mult.: 1

HyperRAM 64 Mbit 8 bit 200 MHz FBGA-24 8 M x 8 35 ns 1.7 V 2 V - 40 C + 105 C Tray
AP Memory DRAM IoT RAM 64Mb OPI (x8) DDR 200MHz, 1.8V, Ind. Temp., BGA24 (OctaRAM for Renesas RZ/A SoC) 553A magazzino
Min: 1
Mult.: 1

PSRAM (Pseudo SRAM) 64 Mbit 8 bit 200 MHz BGA-24 8 M x 8 5.5 ns 1.62 V 1.98 V - 40 C + 85 C Tray
SMARTsemi DRAM DRAM DDR3(L) 2GB 256MX8 1866Mbps 1.35V/1.5V 78-FBGA Industrial 205A magazzino
Min: 1
Mult.: 1

SDRAM - DDR3L 2 Gbit 8 bit 933 MHz FBGA-78 256 M x 8 1.283 V 1.575 V - 40 C + 85 C KTDM Tray
Micron DRAM LPDDR4 16Gbit 32 200/264 TFBGA 1 AT 1.139A magazzino
4.16016/11/2026 previsto
Min: 1
Mult.: 1
Max.: 100

SDRAM Mobile - LPDDR4 16 Gbit 32 bit 2.133 GHz TFBGA-200 512 M x 32 3.5 ns 1.06 V 1.95 V - 40 C + 105 C Tray
AP Memory DRAM IoT RAM 64Mb OPI (x8) DDR 133MHz, 3V, Ext. Temp., BGA24 2.960A magazzino
Min: 1
Mult.: 1

PSRAM (Pseudo SRAM) 64 Mbit 8 bit 133 MHz BGA-24 8 M x 8 2.7 V 3.6 V - 40 C + 105 C IoT RAM Tray
Micron DRAM DDR3 8Gbit 16 96/144TFBGA 2 IT 1.063A magazzino
Min: 1
Mult.: 1
Max.: 100

SDRAM - DDR3L 8 Gbit 16 bit 933 MHz FBGA-96 512 M x 16 13.91 ns 1.283 V 1.45 V - 40 C + 95 C Tray
AP Memory DRAM Octal Double-Data-Rate PSRAM, 133 MHz, BGA-24 68A magazzino
Min: 1
Mult.: 1

PSRAM (Pseudo SRAM) 64 Mbit 8 bit 133 MHz BGA-24 8 M x 8 2.7 V 3.6 V - 40 C + 85 C IoT RAM Tray
AP Memory APS512XXN-OB9-BG
AP Memory DRAM IoT RAM 512Mb OPI (x8,x16) DDR 250MHz, 1.8V, Ind. Temp., BGA24 1.639A magazzino
4.80028/08/2026 previsto
Min: 1
Mult.: 1

PSRAM (Pseudo SRAM) 512 Mbit 8 bit / 16 bit 250 MHz BGA-24 64 M x 8/32 M x 16 1.62 V 1.98 V - 40 C + 85 C IoT RAM Tray

AP Memory DRAM IoT RAM 128Mb OPI (x8) DDR 200MHz, 1.8V, Ind. Temp., BGA24 104A magazzino
4.80027/08/2026 previsto
Min: 1
Mult.: 1

PSRAM (Pseudo SRAM) 128 Mbit 8 bit 200 MHz BGA-24 16 M x 8 5.5 ns 1.62 V 1.98 V - 40 C + 85 C IoT RAM Tray
Infineon Technologies S70KL1282DPBHI020
Infineon Technologies DRAM SPCM 2.110A magazzino
Min: 1
Mult.: 1

HyperRAM 128 Mbit 8 bit 166 MHz 16 M x 8 35 ns 2.7 V 3.6 V - 40 C + 85 C Tray
Infineon Technologies S70KS1282GABHB020
Infineon Technologies DRAM SPCM 636A magazzino
Min: 1
Mult.: 1

HyperRAM 128 Mbit 8 bit 200 MHz 16 M x 8 35 ns 1.7 V 2 V - 40 C + 85 C Tray
Alliance Memory DRAM DDR3L, 8G, 1G X 8, 1.35V, 78-ball FBGA, 933 Mhz, Industrial Temp - Tray 655A magazzino
Min: 1
Mult.: 1

SDRAM - DDR3L 8 Gbit 8 bit 933 MHz FBGA-78 1 G x 8 1.283 V 1.45 V - 40 C + 95 C AS4C1G8D3LA Tray
SMARTsemi DRAM DRAM DDR3(L) 2GB 125MX16 1866Mbps 1.35V/1.5V 96-FBGA Industrial 107A magazzino
Min: 1
Mult.: 1

SDRAM - DDR3L 2 Gbit 16 bit 933 MHz FBGA-96 128 M x 16 1.283 V 1.575 V - 40 C + 85 C KTDM Tray
AP Memory DRAM IoT RAM 128Mb OPI (x8) DDR 200MHz, 1.8V, Ext. Temp., BGA24 426A magazzino
Min: 1
Mult.: 1

PSRAM (Pseudo SRAM) 128 Mbit 8 bit 200 MHz BGA-24 16 M x 8 5.5 ns 1.62 V 1.98 V - 40 C + 105 C IoT RAM Tray
AP Memory DRAM IoT RAM 512Mb OPI (x8) DDR 200MHz, 1.8V, Ind. Temp., BGA24 (OctaRAM for Renesas RZ/A SoC) 842A magazzino
Min: 1
Mult.: 1

PSRAM (Pseudo SRAM) 512 Mbit 8 bit 200 MHz BGA-24 64 M x 8 1.62 V 1.98 V - 40 C + 85 C Tray
Alliance Memory DRAM 512Mb 32Mx16 3.3V 143MHz SDRAM I-Temp 501A magazzino
Min: 1
Mult.: 1

SDRAM 512 Mbit 16 bit 133 MHz TSOP-II-54 32 M x 16 17 ns 3 V 3.6 V - 40 C + 85 C AS4C32M16SC Tray
Alliance Memory DRAM DDR2, 1G, 128M x 8, 1.8V, 60-ball BGA, 400 MHz, Industrial Temp A Die - Tray 259A magazzino
Min: 1
Mult.: 1

SDRAM - DDR2 1 Gbit 8 bit 400 MHz FBGA-60 128 M x 8 400 ps 1.7 V 1.9 V - 40 C + 95 C AS4C128M8D2A Tray
Winbond DRAM 512Mb LPDDR, x16, 200MHz, Industrial Temp, 46nm 308A magazzino
Min: 1
Mult.: 1

SDRAM Mobile - LPDDR 512 Mbit 16 bit 200 MHz VFBGA-60 32 M x 16 6.5 ns 1.7 V 1.95 V - 40 C + 85 C W949D6DB Tray
Winbond DRAM 512Mb LPSDR, x32, 166MHz, Ind Temp, 46nm 285A magazzino
9In ordine
Min: 1
Mult.: 1

SDRAM Mobile - LPSDR 512 Mbit 32 bit 166 MHz VFBGA-90 16 M x 32 1.7 V 1.95 V - 40 C + 85 C W989D2DB Tray