200 MHz DRAM

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Descrizione Scheda dati Disponibilità Prezzi (EUR) Filtra i risultati nella tabella per prezzo unitario in base alla quantità.
Qtà RoHS Modello ECAD Tipo
Dimensioni memoria
Larghezza bus dati
Frequenza di clock massima
Package/involucro
Organizzazione
Tempo di accesso
Tensione di alimentazione - Min.
Tensione di alimentazione - Max.
Temperatura di lavoro minima
Temperatura di lavoro massima
Serie
Confezione
AP Memory DRAM IoT RAM 64Mb OPI (x8) DDR 200MHz, 1.8V, Ind. Temp., BGA24 (OctaRAM for Renesas RZ/A SoC)
Scheda dati
553A magazzino
Min: 1
Mult.: 1

PSRAM (Pseudo SRAM) 64 Mbit 8 bit 200 MHz BGA-24 8 M x 8 5.5 ns 1.62 V 1.98 V - 40 C + 85 C Tray
AP Memory DRAM IoT RAM 256Mb OPI (x8) DDR 200MHz, 1.8V, Ind. Temp., BGA24
Scheda dati
2.509A magazzino
Min: 1
Mult.: 1

PSRAM (Pseudo SRAM) 256 Mbit 8 bit 200 MHz BGA-24 32 M x 8 6.5 ns 1.62 V 1.98 V - 40 C + 85 C IoT RAM Tray
AP Memory DRAM IoT RAM 512Mb OPI (x8) DDR 200MHz, 1.8V, Ind. Temp., BGA24
Scheda dati
1.152A magazzino
Min: 1
Mult.: 1

PSRAM (Pseudo SRAM) 512 Mbit 8 bit 200 MHz BGA-24 64 M x 8 1.62 V 1.98 V - 40 C + 85 C IoT RAM Tray
Infineon Technologies DRAM SPCM
Scheda dati
1.646A magazzino
Min: 1
Mult.: 1

HyperRAM 64 Mbit 8 bit 200 MHz FBGA-24 8 M x 8 35 ns 1.7 V 2 V - 40 C + 105 C Tray
Winbond DRAM 64Mb HyperRAM x8, 200MHz, Ind temp, 3.0V
Scheda dati
4.479A magazzino
1In ordine
Min: 1
Mult.: 1
Max.: 100

HyperRAM 64 Mbit 8 bit 200 MHz TFBGA-24 8 M x 8 35 ns 2.7 V 3.6 V - 40 C + 85 C W956A8MBYA Tray
ISSI DRAM 64Mb, QUADRAM, 2.7V-3.6V, 200MHz, 24-ball TFBGA, RoHS 389A magazzino
Min: 1
Mult.: 1

SDRAM 64 Mbit 200 MHz TFBGA-24 2.7 V 3.6 V

AP Memory DRAM IoT RAM 128Mb OPI (x8) DDR 200MHz, 1.8V, Ind. Temp., BGA24
Scheda dati
143A magazzino
4.80016/11/2026 previsto
Min: 1
Mult.: 1

PSRAM (Pseudo SRAM) 128 Mbit 8 bit 200 MHz BGA-24 16 M x 8 5.5 ns 1.62 V 1.98 V - 40 C + 85 C IoT RAM Tray
Infineon Technologies S70KS1282GABHB020
Infineon Technologies DRAM SPCM
Scheda dati
636A magazzino
Min: 1
Mult.: 1

HyperRAM 128 Mbit 8 bit 200 MHz 16 M x 8 35 ns 1.7 V 2 V - 40 C + 85 C Tray
AP Memory DRAM IoT RAM 64Mb OPI (x8) DDR 200MHz, 3V, Ind. Temp., BGA24 (OctaRAM for Renesas RA6M RZ/A SoC)
Scheda dati
100A magazzino
Min: 1
Mult.: 1

PSRAM (Pseudo SRAM) 64 Mbit 8 bit 200 MHz BGA-24 8 M x 8 2.7 V 3.6 V - 40 C + 85 C IoT RAM Tray
AP Memory DRAM IoT RAM 512Mb OPI (x8) DDR 200MHz, 1.8V, Ind. Temp., BGA24 (OctaRAM for Renesas RZ/A SoC)
Scheda dati
844A magazzino
Min: 1
Mult.: 1

PSRAM (Pseudo SRAM) 512 Mbit 8 bit 200 MHz BGA-24 64 M x 8 1.62 V 1.98 V - 40 C + 85 C Tray
AP Memory DRAM IoT RAM 128Mb OPI (x8) DDR 200MHz, 1.8V, Ext. Temp., BGA24
Scheda dati
426A magazzino
Min: 1
Mult.: 1

PSRAM (Pseudo SRAM) 128 Mbit 8 bit 200 MHz BGA-24 16 M x 8 5.5 ns 1.62 V 1.98 V - 40 C + 105 C IoT RAM Tray

Winbond DRAM 256Mb HyperRAM x8, 200MHz, Ind temp, 1.8V
Scheda dati
480A magazzino
Min: 1
Mult.: 1
Max.: 100

HyperRAM 256 Mbit 8 bit 200 MHz 32 M x 8 1.7 V 1.95 V - 40 C + 85 C Tray

Winbond DRAM 256Mb HyperRAM x8, 200MHz, Ind temp, 1.8V, T&R
Scheda dati
2.000A magazzino
Min: 1
Mult.: 1
Max.: 100
: 2.000

HyperRAM 256 Mbit 8 bit 200 MHz 32 M x 8 1.7 V 1.95 V - 40 C + 85 C Reel, Cut Tape
Winbond DRAM 256Mb DDR SDRAM x16, 200Mhz, Ind temp
Scheda dati
860A magazzino
43621/07/2026 previsto
Min: 1
Mult.: 1
Max.: 100

SDRAM - DDR 256 Mbit 16 bit 200 MHz TSOP-II-66 16 M x 16 700 ps 2.3 V 2.7 V - 40 C + 85 C W9425G6KH Tray
ISSI DRAM 512Mb 1.8V 200Mhz Mobile DDR
Scheda dati
1.195A magazzino
Min: 1
Mult.: 1

SDRAM Mobile - DDR 512 Mbit 16 bit 200 MHz BGA-60 32 M x 16 5 ns 1.7 V 1.95 V - 40 C + 85 C IS43LR16320C Tray
Winbond DRAM 512Mb LPDDR, x32, 200MHz
Scheda dati
73A magazzino
Min: 1
Mult.: 1
Max.: 100

SDRAM Mobile - LPDDR 512 Mbit 32 bit 200 MHz VFBGA-90 16 M x 32 6.5 ns 1.7 V 1.95 V - 25 C + 85 C W949D2DB Tray
ISSI DRAM 256M, 2.5V, DDR, 16Mx16, 166MHz
Scheda dati
142A magazzino
Min: 1
Mult.: 1

SDRAM - DDR 256 Mbit 16 bit 200 MHz TSOP-II-66 16 M x 16 700 ps 2.3 V 2.7 V 0 C + 70 C IS43R16160F
ISSI DRAM 512M 64Mx8 200MHz DDR 2.5V
Scheda dati
34A magazzino
Min: 1
Mult.: 1

SDRAM - DDR 512 Mbit 8 bit 200 MHz TSOP-II-66 64 M x 8 700 ps 2.3 V 2.7 V - 40 C + 85 C IS43R86400F
Alliance Memory DRAM DDR1, 512Mb, 32M X 16, 2.5V, 60-ball BGA, 200 MHz, Automotive Temp - Tray
Scheda dati
101A magazzino
Min: 1
Mult.: 1

SDRAM - DDR 512 Mbit 16 bit 200 MHz FBGA-60 32 M x 16 700 ps 2.3 V 2.7 V - 40 C + 105 C AS4C32M16D1 Tray
Alliance Memory DRAM DDR1, 64MB, 2M X 32, 2.5V 144 BGA 200MHZ, COMMERCIAL TEMP - Tray
Scheda dati
159A magazzino
Min: 1
Mult.: 1

SDRAM - DDR 64 Mbit 32 bit 200 MHz FBGA-144 2 M x 32 700 ps 2.3 V 2.7 V 0 C + 70 C Tray
Alliance Memory DRAM DDR1, 64Mb, 4M x 16, 2.5V, 66pin TSOP II, 200 MHz, Commercial Temp(A)
Scheda dati
189A magazzino
Min: 1
Mult.: 1

SDRAM - DDR 64 Mbit 16 bit 200 MHz TSOP-II-66 4 M x 16 700 ps 2.3 V 2.7 V 0 C + 70 C AS4C4M16D1A Tray
AP Memory DRAM 256Mb 200MHz 18V ITemp Suggested Alt APS256XXN-OB9-BG same device higher speed
Scheda dati
7.071A magazzino
9.600In ordine
Min: 1
Mult.: 1

PSRAM (Pseudo SRAM) 256 Mbit 8 bit / 16 bit 200 MHz BGA-24 32 M x 8/16 M x 16 6.5 ns 1.62 V 1.98 V - 40 C + 85 C IoT RAM Tray
AP Memory DRAM IoT RAM 256Mb OPI x8,x16 DDR 200MHz, 1.8V Temp BGA24 suggested alt APS256XXN-OB9X-BG same device higher speed
Scheda dati
3.665A magazzino
Min: 1
Mult.: 1

PSRAM (Pseudo SRAM) 256 Mbit 8 bit / 16 bit 200 MHz BGA-24 32 M x 8/16 M x 16 1.62 V 1.98 V - 40 C + 105 C Tray
Infineon Technologies S70KL1282GABHV020
Infineon Technologies DRAM SPCM
Scheda dati
3.687A magazzino
Min: 1
Mult.: 1

HyperRAM 128 Mbit 8 bit 200 MHz 16 M x 8 35 ns 2.7 V 3.6 V - 40 C + 105 C Tray
ISSI DRAM 64Mb, OctalRAM, 8Mbx8, 1.8V, 200MHz, 24-ball TFBGA, RoHS
Scheda dati
885A magazzino
Min: 1
Mult.: 1

PSRAM (Pseudo SRAM) 64 Mbit 8 bit 200 MHz TFBGA-24 8 M x 8 5 ns 1.7 V 1.95 V - 40 C + 85 C