|
|
MOSFET HIGH POWER_NEW
- IPW60R037P7XKSA1
- Infineon Technologies
-
1:
9,23 €
-
12.636A magazzino
|
Codice Mouser
726-IPW60R037P7XKSA1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
12.636A magazzino
|
|
Min: 1
Mult.: 1
Max.: 4.000
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
76 A
|
30 mOhms
|
20 V
|
3 V
|
121 nC
|
- 55 C
|
+ 150 C
|
255 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFET HIGH POWER_NEW
- IPB60R099P7ATMA1
- Infineon Technologies
-
1:
4,59 €
-
1.122A magazzino
|
Codice Mouser
726-IPB60R099P7ATMA1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
1.122A magazzino
|
|
Min: 1
Mult.: 1
:
1.000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
600 V
|
31 A
|
77 mOhms
|
20 V
|
3 V
|
45 nC
|
- 55 C
|
+ 150 C
|
117 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFET HIGH POWER_NEW
- IPL60R185P7AUMA1
- Infineon Technologies
-
1:
2,83 €
-
3.516A magazzino
|
Codice Mouser
726-IPL60R185P7AUMA1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
3.516A magazzino
|
|
Min: 1
Mult.: 1
:
3.000
|
|
|
Si
|
SMD/SMT
|
VSON-4
|
N-Channel
|
1 Channel
|
600 V
|
19 A
|
149 mOhms
|
20 V
|
3 V
|
25 nC
|
- 40 C
|
+ 150 C
|
81 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFET HIGH POWER_NEW
- IPW60R080P7XKSA1
- Infineon Technologies
-
1:
6,07 €
-
3.398A magazzino
|
Codice Mouser
726-IPW60R080P7XKSA1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
3.398A magazzino
|
|
Min: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
37 A
|
69 mOhms
|
20 V
|
3 V
|
51 nC
|
- 55 C
|
+ 150 C
|
129 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFET HIGH POWER_NEW
- IPL60R065P7AUMA1
- Infineon Technologies
-
1:
6,94 €
-
3.413A magazzino
|
Codice Mouser
726-IPL60R065P7AUMA1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
3.413A magazzino
|
|
Min: 1
Mult.: 1
:
3.000
|
|
|
Si
|
SMD/SMT
|
VSON-4
|
N-Channel
|
1 Channel
|
600 V
|
41 A
|
53 mOhms
|
20 V
|
3 V
|
67 nC
|
- 40 C
|
+ 150 C
|
201 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFET HIGH POWER_NEW
- IPZA60R045P7XKSA1
- Infineon Technologies
-
1:
8,45 €
-
195A magazzino
|
Codice Mouser
726-IPZA60R045P7XKSA
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
195A magazzino
|
|
Min: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
61 A
|
45 mOhms
|
20 V
|
3.5 V
|
90 nC
|
- 55 C
|
+ 150 C
|
201 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFET HIGH POWER_NEW
- IPB60R045P7ATMA1
- Infineon Technologies
-
1:
7,20 €
-
4.688A magazzino
|
Codice Mouser
726-IPB60R045P7ATMA1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
4.688A magazzino
|
|
Min: 1
Mult.: 1
:
1.000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
120 V
|
61 A
|
45 mOhms
|
20 V
|
1.7 V
|
90 nC
|
- 55 C
|
+ 150 C
|
201 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFET HIGH POWER_NEW
- IPP60R080P7XKSA1
- Infineon Technologies
-
1:
4,99 €
-
23.792A magazzino
|
Codice Mouser
726-IPP60R080P7XKSA1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
23.792A magazzino
|
|
Min: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
37 A
|
69 mOhms
|
20 V
|
3 V
|
51 nC
|
- 55 C
|
+ 150 C
|
129 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFET HIGH POWER_NEW
- IPW60R180P7XKSA1
- Infineon Technologies
-
1:
3,57 €
-
32.172A magazzino
-
43.20017/12/2026 previsto
|
Codice Mouser
726-IPW60R180P7XKSA1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
32.172A magazzino
43.20017/12/2026 previsto
|
|
Min: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
18 A
|
145 mOhms
|
20 V
|
3 V
|
25 nC
|
- 55 C
|
+ 150 C
|
72 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFET HIGH POWER_NEW
- IPB60R080P7ATMA1
- Infineon Technologies
-
1:
5,25 €
-
782A magazzino
|
Codice Mouser
726-IPB60R080P7ATMA1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
782A magazzino
|
|
Min: 1
Mult.: 1
:
1.000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
600 V
|
37 A
|
69 mOhms
|
20 V
|
3 V
|
51 nC
|
- 55 C
|
+ 150 C
|
129 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFET HIGH POWER_NEW
- IPB60R180P7ATMA1
- Infineon Technologies
-
1:
2,87 €
-
7.240A magazzino
|
Codice Mouser
726-IPB60R180P7ATMA1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
7.240A magazzino
|
|
Min: 1
Mult.: 1
:
1.000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
600 V
|
18 A
|
145 mOhms
|
20 V
|
3 V
|
25 nC
|
- 55 C
|
+ 150 C
|
72 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape
|
|
|
|
MOSFET HIGH POWER_NEW
- IPW60R024P7XKSA1
- Infineon Technologies
-
1:
12,28 €
-
1.004A magazzino
|
Codice Mouser
726-IPW60R024P7XKSA1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
1.004A magazzino
|
|
Min: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
101 A
|
24 mOhms
|
20 V
|
3.5 V
|
164 nC
|
- 55 C
|
+ 150 C
|
291 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFET HIGH POWER_NEW
- IPW60R045P7XKSA1
- Infineon Technologies
-
1:
8,23 €
-
1.028A magazzino
|
Codice Mouser
726-IPW60R045P7XKSA1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
1.028A magazzino
|
|
Min: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
61 A
|
45 mOhms
|
20 V
|
3.5 V
|
90 nC
|
- 55 C
|
+ 150 C
|
201 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFET HIGH POWER_NEW
- IPA60R060P7XKSA1
- Infineon Technologies
-
1:
5,74 €
-
3.698A magazzino
-
2.00028/01/2027 previsto
|
Codice Mouser
726-IPA60R060P7XKSA1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
3.698A magazzino
2.00028/01/2027 previsto
|
|
Min: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
48 A
|
49 mOhms
|
20 V
|
3 V
|
67 nC
|
- 55 C
|
+ 150 C
|
29 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFET HIGH POWER_NEW
- IPA60R080P7XKSA1
- Infineon Technologies
-
1:
4,99 €
-
1.716A magazzino
|
Codice Mouser
726-IPA60R080P7XKSA1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
1.716A magazzino
|
|
Min: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
37 A
|
69 mOhms
|
20 V
|
3 V
|
51 nC
|
- 55 C
|
+ 150 C
|
29 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFET HIGH POWER_NEW
- IPA60R099P7XKSA1
- Infineon Technologies
-
1:
4,42 €
-
794A magazzino
|
Codice Mouser
726-IPA60R099P7XKSA1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
794A magazzino
|
|
Min: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
31 A
|
77 mOhms
|
20 V
|
3 V
|
45 nC
|
- 55 C
|
+ 150 C
|
29 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFET HIGH POWER_NEW
- IPA60R120P7XKSA1
- Infineon Technologies
-
1:
3,81 €
-
1.542A magazzino
|
Codice Mouser
726-IPA60R120P7XKSA1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
1.542A magazzino
|
|
Min: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
26 A
|
100 mOhms
|
20 V
|
3 V
|
36 nC
|
- 55 C
|
+ 150 C
|
28 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFET HIGH POWER_NEW
- IPA60R180P7XKSA1
- Infineon Technologies
-
1:
2,86 €
-
1.608A magazzino
-
1.50010/12/2026 previsto
|
Codice Mouser
726-IPA60R180P7XKSA1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
1.608A magazzino
1.50010/12/2026 previsto
|
|
Min: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
18 A
|
145 mOhms
|
20 V
|
3 V
|
25 nC
|
- 55 C
|
+ 150 C
|
26 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFET HIGH POWER_NEW
- IPD60R180P7ATMA1
- Infineon Technologies
-
1:
2,43 €
-
12.613A magazzino
|
Codice Mouser
726-IPD60R180P7ATMA1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
12.613A magazzino
|
|
Min: 1
Mult.: 1
:
2.500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
600 V
|
18 A
|
180 mOhms
|
20 V
|
3 V
|
25 nC
|
- 55 C
|
+ 150 C
|
72 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFET HIGH POWER_NEW
- IPL60R085P7AUMA1
- Infineon Technologies
-
1:
5,69 €
-
2.742A magazzino
|
Codice Mouser
726-IPL60R085P7AUMA1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
2.742A magazzino
|
|
Min: 1
Mult.: 1
:
3.000
|
|
|
Si
|
SMD/SMT
|
VSON-4
|
N-Channel
|
1 Channel
|
600 V
|
39 A
|
73 mOhms
|
20 V
|
3 V
|
51 nC
|
- 40 C
|
+ 150 C
|
154 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape
|
|
|
|
MOSFET HIGH POWER_NEW
- IPL60R105P7AUMA1
- Infineon Technologies
-
1:
4,57 €
-
6.191A magazzino
|
Codice Mouser
726-IPL60R105P7AUMA1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
6.191A magazzino
|
|
Min: 1
Mult.: 1
:
3.000
|
|
|
Si
|
SMD/SMT
|
VSON-4
|
N-Channel
|
1 Channel
|
600 V
|
33 A
|
85 mOhms
|
20 V
|
3 V
|
45 nC
|
- 40 C
|
+ 150 C
|
137 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape
|
|
|
|
MOSFET HIGH POWER_NEW
- IPP60R060P7XKSA1
- Infineon Technologies
-
1:
5,74 €
-
2.942A magazzino
-
3.00011/02/2027 previsto
|
Codice Mouser
726-IPP60R060P7XKSA1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
2.942A magazzino
3.00011/02/2027 previsto
|
|
Min: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
48 A
|
49 mOhms
|
20 V
|
3 V
|
67 nC
|
- 55 C
|
+ 150 C
|
164 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFET HIGH POWER_NEW
- IPP60R099P7XKSA1
- Infineon Technologies
-
1:
4,67 €
-
3.566A magazzino
-
3.50026/11/2026 previsto
|
Codice Mouser
726-IPP60R099P7XKSA1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
3.566A magazzino
3.50026/11/2026 previsto
|
|
Min: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
31 A
|
77 mOhms
|
20 V
|
3 V
|
45 nC
|
- 55 C
|
+ 150 C
|
117 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFET HIGH POWER_NEW
- IPZA60R037P7XKSA1
- Infineon Technologies
-
1:
10,60 €
-
373A magazzino
|
Codice Mouser
726-IPZA60R037P7XKSA
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
373A magazzino
|
|
Min: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
600 V
|
76 A
|
30 mOhms
|
20 V
|
3 V
|
121 nC
|
- 55 C
|
+ 150 C
|
255 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFET CONSUMER
- IPAN60R180P7SXKSA1
- Infineon Technologies
-
1:
2,37 €
-
778A magazzino
-
NRND
|
Codice Mouser
726-IPAN60R180P7SXKS
NRND
|
Infineon Technologies
|
MOSFET CONSUMER
|
|
778A magazzino
|
|
Min: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
18 A
|
340 mOhms
|
20 V
|
3.5 V
|
25 nC
|
- 40 C
|
+ 150 C
|
26 W
|
Enhancement
|
CoolMOS
|
Tube
|
|