NV6428 Bi-Directional GaNFast™ Power Switches

Navitas Semiconductor NV6428 Bi-Directional GaNFast™ Power Switches are designed to block voltage in both directions. A monolithic, integrated substrate-clamping circuit between each source and the common substrate automatically clamps the source-to-substrate voltage. Navitas’ unique substrate clamp technology delivers optimized switching performance during 4-quadrant operation compared to a floating-substrate switch, which can experience a "back-gating effect".

Results: 2
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 Mfr.
Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Mounting Style
Package/Case
Id - Continuous Drain Current
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Navitas Semiconductor GaN FETs GaNFast BDS 650V 52mOhm TOLT
Datasheet
396In Stock
450Expected 3/17/2027
Cut Tape
14,00 €
10,53 €
7,85 €
Reel
7,85 €
Min.: 1
Mult.: 1
: 450
SMD/SMT TOLT-16 49 A - 10 V, 7 V 2.8 V 3.62 nC - 40 C + 150 C
Navitas Semiconductor GaN FETs GaNFast BDS 650V 52mOhm TOLT
Datasheet
Non-Stocked Lead-Time 26 Weeks
Reel
7,27 €
Min.: 1.500
Mult.: 1.500
: 1.500
SMD/SMT TOLT-16 49 A - 10 V, 7 V 2.8 V 3.62 nC - 40 C + 150 C