|
|
MOSFET SiC CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R008M2HXTMA1
- Infineon Technologies
-
1:
33,23 €
-
1.590A magazzino
-
1.000In ordine
|
Codice Mouser
726-IMBG120R008M2HXT
|
Infineon Technologies
|
MOSFET SiC CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
1.590A magazzino
1.000In ordine
|
|
Min: 1
Mult.: 1
:
1.000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
189 A
|
7.7 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
195 nC
|
- 55 C
|
+ 175 C
|
800 W
|
Enhancement
|
|
|
|
MOSFET SiC CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R012M2HXTMA1
- Infineon Technologies
-
1:
23,89 €
-
2.011A magazzino
|
Codice Mouser
726-IMBG120R012M2HXT
|
Infineon Technologies
|
MOSFET SiC CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
2.011A magazzino
|
|
Min: 1
Mult.: 1
:
1.000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
144 A
|
12.2 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
124 nC
|
- 55 C
|
+ 175 C
|
600 W
|
Enhancement
|
|
|
|
MOSFET SiC CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R022M2HXTMA1
- Infineon Technologies
-
1:
15,32 €
-
245A magazzino
|
Codice Mouser
726-IMBG120R022M2HXT
|
Infineon Technologies
|
MOSFET SiC CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
245A magazzino
|
|
Min: 1
Mult.: 1
:
1.000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
87 A
|
21.6 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
71 nC
|
- 55 C
|
+ 175 C
|
385 W
|
Enhancement
|
|
|
|
MOSFET SiC CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R026M2HXTMA1
- Infineon Technologies
-
1:
11,64 €
-
1.603A magazzino
|
Codice Mouser
726-IMBG120R026M2HXT
|
Infineon Technologies
|
MOSFET SiC CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
1.603A magazzino
|
|
Min: 1
Mult.: 1
:
1.000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
75 A
|
25.4 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
60 nC
|
- 55 C
|
+ 175 C
|
335 W
|
Enhancement
|
|
|
|
MOSFET SiC CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R053M2HXTMA1
- Infineon Technologies
-
1:
8,07 €
-
502A magazzino
-
1.00006/05/2027 previsto
|
Codice Mouser
726-IMBG120R053M2HXT
|
Infineon Technologies
|
MOSFET SiC CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
502A magazzino
1.00006/05/2027 previsto
|
|
Min: 1
Mult.: 1
:
1.000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
41 A
|
52.6 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
30 nC
|
- 55 C
|
+ 175 C
|
205 W
|
Enhancement
|
|
|
|
MOSFET SiC CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R234M2HXTMA1
- Infineon Technologies
-
1:
4,53 €
-
3.615A magazzino
|
Codice Mouser
726-IMBG120R234M2HXT
|
Infineon Technologies
|
MOSFET SiC CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
3.615A magazzino
|
|
Min: 1
Mult.: 1
Max.: 1.000
:
1.000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
8.1 A
|
233.9 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
7.9 nC
|
- 55 C
|
+ 175 C
|
80 W
|
Enhancement
|
|
|
|
MOSFET SiC CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R040M2HXTMA1
- Infineon Technologies
-
1:
9,81 €
-
79A magazzino
-
1.00031/12/2026 previsto
|
Codice Mouser
726-IMBG120R040M2HXT
|
Infineon Technologies
|
MOSFET SiC CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
79A magazzino
1.00031/12/2026 previsto
|
|
Min: 1
Mult.: 1
:
1.000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
52 A
|
39.6 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
8.1 nC
|
- 55 C
|
+ 175 C
|
250 W
|
Enhancement
|
|
|
|
MOSFET SiC CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R078M2HXTMA1
- Infineon Technologies
-
1:
7,06 €
-
39A magazzino
-
2.00008/07/2027 previsto
|
Codice Mouser
726-IMBG120R078M2HXT
|
Infineon Technologies
|
MOSFET SiC CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
39A magazzino
2.00008/07/2027 previsto
|
|
Min: 1
Mult.: 1
:
1.000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
29 A
|
78.1 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
20.6 nC
|
- 55 C
|
+ 175 C
|
158 W
|
Enhancement
|
|
|
|
MOSFET SiC CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R181M2HXTMA1
- Infineon Technologies
-
1:
5,56 €
-
198A magazzino
-
4.000In ordine
|
Codice Mouser
726-IMBG120R181M2HXT
|
Infineon Technologies
|
MOSFET SiC CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
198A magazzino
4.000In ordine
In ordine:
2.000 13/05/2027 previsto
2.000 12/08/2027 previsto
Tempo di consegna da parte della fabbrica:
52 settimane
|
|
Min: 1
Mult.: 1
:
1.000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
14.9 A
|
181.4 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
9.7 nC
|
- 55 C
|
+ 175 C
|
94 W
|
Enhancement
|
|
|
|
MOSFET SiC CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R017M2HXTMA1
- Infineon Technologies
-
1:
17,48 €
-
1.99919/11/2026 previsto
|
Codice Mouser
726-IMBG120R017M2HXT
|
Infineon Technologies
|
MOSFET SiC CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
1.99919/11/2026 previsto
|
|
Min: 1
Mult.: 1
:
1.000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
107 A
|
17.1 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
89 nC
|
- 55 C
|
+ 175 C
|
470 W
|
Enhancement
|
|
|
|
MOSFET SiC CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R116M2HXTMA1
- Infineon Technologies
-
1:
6,14 €
-
2.00003/12/2026 previsto
|
Codice Mouser
726-IMBG120R116M2HXT
|
Infineon Technologies
|
MOSFET SiC CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
2.00003/12/2026 previsto
|
|
Min: 1
Mult.: 1
:
1.000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
21.2 A
|
115.7 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
14.4 nC
|
- 55 C
|
+ 175 C
|
123 W
|
Enhancement
|
|