Infineon Technologies CY7C1399BN 256K CMOS Static RAM
Infineon Technologies CY7C1399BN 256K CMOS Static RAM is a high-performance 3.3V CMOS static RAM device organized as 32,768 words by 8 bits (256K). Easy memory expansion is provided by an active LOW Chip Enable and active LOW Output Enable and tri-state drivers.
The Infineon Technologies CY7C1399BN 256K CMOS static RAM device has an automatic power-down feature that reduces the power consumption by more than 95% when deselected. The Infineon CY7C1399BN CMOS static RAM is ideal for low-voltage cache memory applications.
Features
- –40°C to 85°C industrial temperature ranges
- 0°C to 70°C commercial temperature range
- –40°C to 85°C automotive-A temperature range
- Single 3.3V power supply
- Ideal for low-voltage cache memory applications
- 12ns high speed
- 180mW (max) low active power
- Low-power alpha immune 6T cell
Associated Products
Infineon Technologies Asynchronous SRAM
Broad portfolio of fast asynchronous and low-power asynchronous SRAM (MoBL™) devices.
Pubblicato: 2010-04-05
| Aggiornato: 2024-06-25