32 bit DRAM

Risultati: 356
Seleziona Immagine Codice Produttore Descrizione Scheda dati Disponibilità Prezzi (EUR) Filtra i risultati nella tabella per prezzo unitario in base alla quantità. Qtà RoHS Modello ECAD Tipo Dimensioni memoria Larghezza bus dati Frequenza di clock massima Package/involucro Organizzazione Tempo di accesso Tensione di alimentazione - Min. Tensione di alimentazione - Max. Temperatura di lavoro minima Temperatura di lavoro massima Serie Confezione
ISSI DRAM 128M, 3.3V, SDRAM, 4Mx32, 166Mhz, 90 ball BGA (8mmx13mm) RoHS 639A magazzino
Min: 1
Mult.: 1

SDRAM 128 Mbit 32 bit 166 MHz BGA-90 4 M x 32 6.5 ns 3 V 3.6 V 0 C + 70 C
ISSI DRAM 64M, 3.3V, SDRAM, 2Mx32, 166Mhz, 86 pin TSOP II (400 mil) RoHS, IT, T&R 740A magazzino
1.500In ordine
Min: 1
Mult.: 1
: 1.500

SDRAM 64 Mbit 32 bit 166 MHz TSOP-II-86 2 M x 32 5.4 ns 3 V 3.6 V - 40 C + 85 C Reel, Cut Tape, MouseReel
ISSI DRAM Automotive (-40 to +105C), 128M, 3.3V, SDRAM, 4Mx32, 166MHz, 90 ball BGA (8mmx13mm) RoHS 170A magazzino
Min: 1
Mult.: 1

SDRAM 128 Mbit 32 bit 166 MHz TSOP-II-86 4 M x 32 5.4 ns 3 V 3.6 V - 40 C + 105 C
ISSI DRAM Automotive (-40 to +105C), 128M, 3.3V, SDRAM, 4Mx32, 143MHz, 86 pin TSOP II (400 mil) RoHS 139A magazzino
Min: 1
Mult.: 1

SDRAM 128 Mbit 32 bit 143 MHz TSOP-II-86 4 M x 32 5.4 ns 3 V 3.6 V - 40 C + 105 C
ISSI DRAM 64M, 3.3V, SDRAM, 2Mx32, 143Mhz, 90 ball BGA (8mmx13mm) RoHS 239A magazzino
Min: 1
Mult.: 1

SDRAM 64 Mbit 32 bit 143 MHz BGA-90 2 M x 32 5.4 ns 3 V 3.6 V 0 C + 70 C
ISSI DRAM Automotive (-40 to +105C), 64M, 3.3V, SDRAM, 2Mx32, 143MHz, 90 ball BGA (8mmx13mm) RoHS 220A magazzino
Min: 1
Mult.: 1

SDRAM 64 Mbit 32 bit 143 MHz BGA-90 2 M x 32 5.4 ns 3 V 3.66 V - 40 C + 105 C
ISSI DRAM Automotive (-40 to +105C), 128M, 3.3V, SDRAM, 4Mx32, 166MHz, 86 pin TSOP II (400 mil) RoHS 214A magazzino
Min: 1
Mult.: 1

SDRAM 128 Mbit 32 bit 166 MHz TSOP-II-86 4 M x 32 5.4 ns 3 V 3.6 V - 40 C + 105 C
Micron DRAM GDDR6 16Gbit 32 180/252 TFBGA 2 CT 1.987A magazzino
Min: 1
Mult.: 1
Max.: 100

SGRAM - GDDR6 16 Gbit 32 bit 2 GHz TFBGA-180 512 M x 32 1.3095 V 1.3905 V 0 C + 95 C Tray
ISSI DRAM 64M, 3.3V, SDRAM, 2Mx32, 166Mhz, 86 pin TSOP II (400 mil) RoHS 143A magazzino
10806/10/2026 previsto
Min: 1
Mult.: 1

SDRAM 64 Mbit 32 bit 166 MHz TSOP-II-86 2 M x 32 5.4 ns 3 V 3.6 V 0 C + 70 C
Micron DRAM LPDDR4 4G 128MX32 FBGA 5.481A magazzino
Min: 1
Mult.: 1
Max.: 100
: 2.000

SDRAM Mobile - LPDDR4 4 Gbit 32 bit 1.866 GHz VFBGA-200 128 M x 32 1.1 V - 25 C + 85 C 110S Reel, Cut Tape, MouseReel
Micron DRAM LPDDR4 4G 128MX32 FBGA DDP 1.950A magazzino
Min: 1
Mult.: 1
Max.: 100
: 2.000

SDRAM Mobile - LPDDR4 4 Gbit 32 bit 2.133 GHz VFBGA-200 128 M x 32 1.1 V - 25 C + 85 C 110S Reel, Cut Tape
ISSI DRAM 4G, 1.2/1.8V, LPDDR2, 128Mx32, 533MHz, 134 ball BGA (10mmx11.5mm) RoHS, IT 902A magazzino
Min: 1
Mult.: 1

SDRAM - LPDDR2 4 Gbit 32 bit 533 MHz BGA-134 128 M x 32 1.14 V 1.95 V - 40 C + 85 C Tray
Micron MT52L256M32D1PF-107 WT:B TR
Micron DRAM LPDDR3 8G 256MX32 FBGA 589A magazzino
Min: 1
Mult.: 1
Max.: 100
: 1.000

SDRAM Mobile - LPDDR3 8 Gbit 32 bit 933 MHz FBGA-178 256 M x 32 - 30 C + 85 C MT52L256M32D1PF Reel, Cut Tape, MouseReel
Micron DRAM GDDR6 8G 256MX32 FBGA 363A magazzino
Min: 1
Mult.: 1
Max.: 100

SGRAM - GDDR6 8 Gbit 32 bit 1.75 GHz FBGA-180 256 M x 32 1.3095 V 1.3905 V 0 C + 95 C MT61K Tray
Winbond DRAM 512Mb LPSDR, x32, 166MHz, Ind Temp, 46nm 432A magazzino
930/07/2026 previsto
Min: 1
Mult.: 1
Max.: 100

SDRAM Mobile - LPSDR 512 Mbit 32 bit 166 MHz VFBGA-90 16 M x 32 1.7 V 1.95 V - 40 C + 85 C W989D2DB Tray
Winbond DRAM 1Gb LPDDR3, x32, 800MHz 536A magazzino
Min: 1
Mult.: 1
Max.: 100

SDRAM - LPDDR3 1 Gbit 32 bit 800 MHz VFBGA-178 32 M x 32 1.14 V 1.95 V - 25 C + 85 C W63AH2NB Tray
ISSI DRAM 512M, 3.3V, SDRAM, 16Mx32, 166MHz, 90 ball BGA (8mmx13mm) RoHS, 257A magazzino
Min: 1
Mult.: 1

SDRAM 512 Mbit 32 bit 167 MHz BGA-90 16 M x 32 6 ns 3 V 3.6 V 0 C + 70 C IS42S32160F Reel
ISSI DRAM 512M, 3.3V, SDRAM, 16Mx32, 166MHz, 86 pin TSOP II, RoHS, IT 160A magazzino
Min: 1
Mult.: 1

SDRAM 512 Mbit 32 bit 167 MHz TSOP-II-86 16 M x 32 6 ns 3 V 3.6 V - 40 C + 85 C IS42S32160F
ISSI DRAM 256M, 3.3V, SDRAM, 8Mx32, 166Mhz, 86 pin TSOP II RoHS, IT 1.007A magazzino
2.484In ordine
Min: 1
Mult.: 1

SDRAM 256 Mbit 32 bit 166 MHz TSOP-II-86 8 M x 32 6.5 ns 3 V 3.6 V - 40 C + 85 C IS42S32800J
ISSI DRAM 256M, 1.8V, 166Mhz 8Mx32 Mobile SDR 245A magazzino
Min: 1
Mult.: 1

SDRAM Mobile 256 Mbit 32 bit 166 MHz BGA-90 8 M x 32 6 ns 1.7 V 1.95 V - 40 C + 85 C IS42VM32800K Tray
ISSI DRAM 128Mb, 3.3V, 143MHz 4Mx32 SDR SDRAM 2.227A magazzino
Min: 1
Mult.: 1

SDRAM 128 Mbit 32 bit 143 MHz TSOP-II-86 4 M x 32 5.5 ns 3 V 3.6 V - 40 C + 105 C IS45S32400F Tray
ISSI DRAM 512M, 3.3V, 133Mhz 16Mx32 Mobile SDR 869A magazzino
Min: 1
Mult.: 1

SDRAM Mobile 512 Mbit 32 bit 133 MHz BGA-90 16 M x 32 6 ns 2.7 V 3.6 V - 40 C + 85 C IS42SM32160E Tray
Alliance Memory DRAM LPDDR4X, 8G, 256M x 32, 0.6V, 200ball TFBGA, 1600MHZ, ECC, AUTO TEMP 585A magazzino
Min: 1
Mult.: 1

SDRAM - LPDDR4X 8 Gbit 32 bit 1.6 GHz FBGA-200 256 M x 32 3.5 ns 1.06 V 1.95 V - 40 C + 105 C Tray
ISSI IS45S32800J-7TLA2
ISSI DRAM 667A magazzino
Min: 1
Mult.: 1
SDRAM 256 Mbit 32 bit 143 MHz TSOP-II-86 8 M x 32 7 ns 3 V 3.6 V - 40 C + 105 C
ISSI DRAM 256M, 3.3V, SDRAM, 8Mx32, 166Mhz, 90 ball BGA (8mmx13mm) 237A magazzino
Min: 1
Mult.: 1

SDRAM 256 Mbit 32 bit 166 MHz BGA-90 8 M x 32 6.5 ns 3 V 3.6 V 0 C + 70 C IS42S32800G Tray