PSRAM (Pseudo SRAM) Circuiti integrati di memoria

Tipi di Circuiti integrati di memoria

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Risultati: 82
Seleziona Immagine Codice Produttore Descrizione Scheda dati Disponibilità Prezzi (EUR) Filtra i risultati nella tabella per prezzo unitario in base alla quantità. Qtà RoHS Tipo di prodotto Stile di montaggio Package/involucro Dimensioni memoria Organizzazione Temperatura di lavoro minima Temperatura di lavoro massima Confezione
AP Memory DRAM IoT RAM 128Mb OPI (x8) DDR 133MHz, 3V, Ext. Temp., BGA24 200A magazzino
Min: 1
Mult.: 1

DRAM SMD/SMT BGA-24 128 Mbit 16 M x 8 - 40 C + 105 C Tray
AP Memory DRAM 64Mb QSPI PSRAM Sync Serial x1/x4 SDR 508A magazzino
Min: 1
Mult.: 1
Nastrati: 3.000

DRAM SMD/SMT SOP-8 64 Mbit 8 M x 8 - 40 C + 105 C Reel, Cut Tape, MouseReel
AP Memory DRAM IoT RAM 64Mb OPI (x8) DDR 200MHz, 3V, Ind. Temp., BGA24 (OctaRAM for Renesas RA6M RZ/A SoC) 279A magazzino
Min: 1
Mult.: 1

DRAM SMD/SMT BGA-24 64 Mbit 8 M x 8 - 40 C + 85 C Tray
AP Memory DRAM 64Mb QSPI PSRAM Sync Serial x1/x4 SDR 9.964A magazzino
Min: 1
Mult.: 1
Nastrati: 10.000

DRAM SMD/SMT USON-8 64 Mbit 8 M x 8 - 40 C + 85 C Reel, Cut Tape, MouseReel
AP Memory DRAM IoT RAM 16Mb QSPI (x4) SDR 144/84MHz, QCC51xx SoC, 1.8V, USON8 2.903A magazzino
Min: 1
Mult.: 1
Nastrati: 10.000

DRAM SMD/SMT USON-8 16 Mbit 2 M x 8 - 25 C + 85 C Reel, Cut Tape, MouseReel
ISSI SRAM Pseudo SRAM 64Mb 1.954A magazzino
Min: 1
Mult.: 1
Max.: 127

SRAM SMD/SMT VFBGA-54 64 Mbit 4 M x 16 - 40 C + 85 C
Alliance Memory DRAM 128M 8Mx16 1.8V LP Pseudo SRAM IT 462A magazzino
Min: 1
Mult.: 1

DRAM SMD/SMT FBGA-49 128 Mbit 8 M x 16 - 30 C + 85 C Tray
AP Memory DRAM IoT RAM 64Mb OPI (x8) DDR 200MHz, 1.8V, Ext. Temp., BGA24 394A magazzino
Min: 1
Mult.: 1

DRAM SMD/SMT BGA-24 64 Mbit 8 M x 8 - 40 C + 105 C Tray
ISSI IS66WVO16M8DALL-200BLI-TR
ISSI SRAM 128Mb, OctalRAM, 16Mbx8, 1.8V, 200MHz, 24-ball TFBGA, RoHS 2.374A magazzino
Min: 1
Mult.: 1
Max.: 5
Nastrati: 2.500
SRAM SMD/SMT TFBGA-24 128 Mbit 16 M x 8 - 40 C + 85 C Reel, Cut Tape
ISSI DRAM 64Mb, OctalRAM, 8Mbx8, 1.8V, 200MHz, 24-ball TFBGA, RoHS 885A magazzino
Min: 1
Mult.: 1
Max.: 37

DRAM SMD/SMT TFBGA-24 64 Mbit 8 M x 8 - 40 C + 85 C
AP Memory DRAM 256Mb 200MHz 18V ITemp Suggested Alt APS256XXN-OB9-BG same device higher speed 8.710A magazzino
Min: 1
Mult.: 1

DRAM SMD/SMT BGA-24 256 Mbit 32 M x 8/16 M x 16 - 40 C + 85 C Tray
ISSI DRAM 64Mb, OctalRAM, 8Mbx8, 3.0V, 166MHz, 24-ball TFBGA, RoHS 1.887A magazzino
Min: 1
Mult.: 1
Max.: 200

DRAM SMD/SMT TFBGA-24 64 Mbit 8 M x 8 - 40 C + 85 C
ISSI DRAM 64Mb, SerialRAM, Continuous Operation, 2.7V-3.6V, 104MHz, 8 pin SOIC 150 mil, RoHS 817A magazzino
Min: 1
Mult.: 1
Max.: 353

DRAM SMD/SMT SOIC-8 64 Mbit 8 M x 8 - 40 C + 85 C
AP Memory DRAM IoT RAM 256Mb OPI x8,x16 DDR 200MHz, 1.8V Temp BGA24 suggested alt APS256XXN-OB9X-BG same device higher speed 3.668A magazzino
Min: 1
Mult.: 1

DRAM SMD/SMT BGA-24 256 Mbit 32 M x 8/16 M x 16 - 40 C + 105 C Tray
ISSI DRAM 32Mb, SerialRAM, Continuous Operation, 2.7V-3.6V, 104MHz, 8 pin SOIC 150 mil, RoHS 170A magazzino
Min: 1
Mult.: 1
Max.: 13

DRAM SMD/SMT SOIC-8 32 Mbit 4 M x 8 - 40 C + 85 C
ISSI DRAM 64Mb, SerialRAM, Continuous Operation, 1.65V-1.95V, 104MHz, 8 pin SOIC 150 mil, RoHS 148A magazzino
Min: 1
Mult.: 1
Max.: 24

DRAM SMD/SMT SOIC-8 64 Mbit 8 M x 8 - 40 C + 85 C
ISSI DRAM 32Mb, SerialRAM, 1.65V-1.95V, 104MHz, 8 pin SOIC 150 mil, RoHS 159A magazzino
Min: 1
Mult.: 1
Max.: 15

DRAM SMD/SMT SOIC-8 64 Mbit 8 M x 8 - 40 C + 85 C
AP Memory DRAM IoT RAM 64Mb OPI (x8) DDR 200MHz, 1.8V, Ind. Temp., BGA24 (OctaRAM for Renesas RZ/A SoC) 568A magazzino
Min: 1
Mult.: 1

DRAM SMD/SMT BGA-24 64 Mbit 8 M x 8 - 40 C + 85 C Tray
AP Memory DRAM 512Mb 200MHz 18V ITemp Suggested Alt APS512XXN-OB9-BG same device higher speed 354A magazzino
2.88020/03/2026 previsto
Min: 1
Mult.: 1

DRAM SMD/SMT BGA-24 512 Mbit 64 M x 8/32 M x 16 - 40 C + 85 C Tray
ISSI IS66WVH64M8DBLL-166B1LI
ISSI DRAM 512Mb, HyperRAM, 64Mbx8, 3.0V, 166MHz, 24-ball TFBGA, RoHS 501A magazzino
Min: 1
Mult.: 1
Max.: 200

DRAM SMD/SMT TFBGA-24 64 Mbit 64 M x 8 - 40 C + 85 C
AP Memory DRAM IoT RAM 128Mb OPI (x8) DDR 200MHz, 1.8V, Ext. Temp., BGA24 431A magazzino
Min: 1
Mult.: 1

DRAM SMD/SMT BGA-24 128 Mbit 16 M x 8 - 40 C + 105 C Tray

AP Memory DRAM IoT RAM 16Mb QSPI (x1,x4) SDR 144/84MHz, RBX, 1.8V, Ind. Temp., SOP8 79A magazzino
Min: 1
Mult.: 1
Nastrati: 3.000

DRAM SMD/SMT SOP-8 16 Mbit 2 M x 8 - 40 C + 85 C Reel, Cut Tape, MouseReel
ISSI SRAM Pseudo SRAM, 64Mb 4Mb x16bits, CLL 240A magazzino
Min: 1
Mult.: 1
Max.: 36

SRAM SMD/SMT VFBGA-54 64 Mbit 4 M x 16 - 40 C + 85 C
AP Memory APS12808O-OBR-WB
AP Memory DRAM IoT RAM 128Mb OPI (x8) DDR 200MHz, 1.8V, Ind. Temp., WLCSP
4.97528/05/2026 previsto
Min: 1
Mult.: 1
Nastrati: 5.000

DRAM SMD/SMT WLCSP-15 128 Mbit 16 M x 8 - 40 C + 85 C Reel, Cut Tape
AP Memory APS512XXN-OB9-BG
AP Memory DRAM IoT RAM 512Mb OPI (x8,x16) DDR 250MHz, 1.8V, Ind. Temp., BGA24
1.72920/03/2026 previsto
Min: 1
Mult.: 1

DRAM SMD/SMT BGA-24 512 Mbit 64 M x 8/32 M x 16 - 40 C + 85 C Tray