STMicroelectronics MOSFET SiC

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Qtà RoHS Modello ECAD Stile di montaggio
Package/involucro
Polarità transistor
Numero di canali
Vds - Tensione di rottura drain-source
Id - corrente di drain continua
Rds On - Drain-source sulla resistenza
Vgs - Tensione gate-source
Vgs th - Tensione di soglia gate-source
Qg - Carica del gate
Temperatura di lavoro minima
Temperatura di lavoro massima
Pd - Dissipazione di potenza
Modalità canale
Qualifica


STMicroelectronics MOSFET SiC Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A
Scheda dati
57A magazzino
Min: 1
Mult.: 1

Through Hole HiP-247-4 N-Channel 1 Channel 650 V 30 A 72 mOhms - 18 V, + 18 V 4.2 V 32 nC - 55 C + 200 C 210 W Enhancement


STMicroelectronics MOSFET SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an H2PAK-7 package
Scheda dati
85A magazzino
Min: 1
Mult.: 1
Nastrati: 1.000

SMD/SMT H2PAK-7 N-Channel 1 Channel 1.2 kV 30 A 87 mOhms - 18 V, + 18 V 4.2 V 37 nC - 55 C + 175 C 223 W Enhancement AEC-Q101


STMicroelectronics MOSFET SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HU3PAK package
Scheda dati
73A magazzino
1.20016/03/2026 previsto
Min: 1
Mult.: 1
Nastrati: 600

SMD/SMT HU3PAK-7 N-Channel 1 Channel 1.2 kV 30 A 87 mOhms - 18 V, + 18 V 4.2 V 37 nC - 55 C + 175 C 223 W Enhancement AEC-Q101
STMicroelectronics MOSFET SiC Silicon carbide Power MOSFET 1700 V, 1.0 Ohm typ., 7 A in an HiP247 package
Scheda dati
592A magazzino
Min: 1
Mult.: 1

Through Hole HiP-247-3 N-Channel 1 Channel 1.7 kV 6 A 1 Ohms - 10 V, + 25 V 2.1 V 14 nC - 55 C + 200 C 120 W Enhancement
STMicroelectronics MOSFET SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 169 mOhm typ., 20 A in an
Scheda dati
510A magazzino
Min: 1
Mult.: 1

Through Hole N-Channel 1 Channel 1.2 kV 20 A 239 mOhms - 20 V, + 20 V 3.5 V 45 nC - 55 C + 200 C 175 W Enhancement AEC-Q101
STMicroelectronics MOSFET SiC Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac
Scheda dati
1.597A magazzino
MouseReel disponibile
Min: 1
Mult.: 1
Nastrati: 3.000

SMD/SMT PowerFLAT-5 N-Channel 1 Channel 650 V 40 A 18 mOhms - 10 V, + 22 V 5 V 157 nC - 55 C + 175 C 935 W Enhancement
STMicroelectronics MOSFET SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an H
Scheda dati
593A magazzino
Min: 1
Mult.: 1

Through Hole HiP-247-3 N-Channel 1 Channel 1.2 kV 36 A 100 mOhms - 10 V, + 22 V 4.9 V 61 nC - 55 C + 200 C 278 W Enhancement AEC-Q101
STMicroelectronics MOSFET SiC Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 100 A in an H
Scheda dati
317A magazzino
Min: 1
Mult.: 1

Through Hole HiP-247-3 N-Channel 1 Channel 650 V 100 A 69 mOhms - 10 V, + 22 V 5 V 162 nC - 55 C + 200 C 420 W Enhancement AEC-Q101


STMicroelectronics MOSFET SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an HiP247-4 package
Scheda dati
90A magazzino
Min: 1
Mult.: 1

Through Hole HiP247-4 N-Channel 1 Channel 1.2 kV 33 A 105 mOhms - 18 V, + 18 V 5 V 63 nC - 55 C + 200 C 290 W Enhancement AEC-Q101
STMicroelectronics MOSFET SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package
Scheda dati
9A magazzino
2.00012/10/2026 previsto
Min: 1
Mult.: 1
Nastrati: 1.000

SMD/SMT H2PAK-7 N-Channel 1 Channel 1.2 kV 55 A 37 mOhms - 10 V, + 22 V 3 V 73 nC - 55 C + 175 C 375 W Enhancement AEC-Q101
STMicroelectronics MOSFET SiC Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 119 A in an HiP247-4 package
Scheda dati
151A magazzino
Min: 1
Mult.: 1

Through Hole HiP-247-4 N-Channel 1 Channel 650 V 119 A 24 mOhms - 10 V, + 22 V 5 V 157 nC - 55 C + 200 C 565 W Enhancement


STMicroelectronics MOSFET SiC Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 91 A in an HiP247-4 package
Scheda dati
28A magazzino
Min: 1
Mult.: 1

Through Hole HIP247-4 N-Channel 1 Channel 1.2 kV 91 A 30 mOhms - 10 V, + 22 V 2.45 V 150 nC - 55 C + 200 C 547 W Enhancement
STMicroelectronics MOSFET SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mOhm typ., 129 A in an HiP247-4 package
Scheda dati
60026/10/2026 previsto
Min: 1
Mult.: 1

Through Hole HiP-247-4 N-Channel 1 Channel 1.2 kV 129 A 15 mOhms - 18 V, + 18 V 4.2 V 167 nC - 55 C + 200 C 673 W Enhancement AEC-Q101


STMicroelectronics MOSFET SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
Scheda dati
1.200In ordine
Min: 1
Mult.: 1

Through Hole HiP-247-4 N-Channel 1 Channel 1.2 kV 56 A 37 mOhms - 18 V, + 18 V 4.2 V 73 nC - 55 C + 200 C 388 W Enhancement AEC-Q101
STMicroelectronics MOSFET SiC Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A
Scheda dati
40004/01/2027 previsto
Min: 1
Mult.: 1
Nastrati: 600



STMicroelectronics MOSFET SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an H2PAK-7 package
Scheda dati
99622/04/2026 previsto
Min: 1
Mult.: 1
Nastrati: 1.000

SMD/SMT H2PAK-7 N-Channel 1 Channel 1.2 kV 40 A 54 mOhms - 18 V, + 18 V 4.2 V 54 nC - 55 C + 175 C 300 W Enhancement AEC-Q101
STMicroelectronics MOSFET SiC Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A
Scheda dati
1.11318/03/2026 previsto
MouseReel disponibile
Min: 1
Mult.: 1
Nastrati: 600

SMD/SMT HU3PAK-7 N-Channel 1 Channel 650 V 30 A 72 mOhms - 10 V, + 22 V 4.2 V 29 nC - 55 C + 175 C 185 W Enhancement AEC-Q101
STMicroelectronics MOSFET SiC Automotive-grade Silicon carbide Power MOSFET 1200 V, 500 mOhm typ., 12 A in an
Scheda dati
84423/11/2026 previsto
Min: 1
Mult.: 1

Through Hole N-Channel 1 Channel 1.2 kV 12 A 500 mOhms - 10 V, + 25 V 3.5 V 22 nC - 55 C + 200 C 150 W Enhancement AEC-Q101
STMicroelectronics MOSFET SiC Silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package
Scheda dati
100In ordine
Min: 1
Mult.: 1
Nastrati: 1.000

SMD/SMT H2PAK-7 N-Channel 1 Channel 1.2 kV 55 A 37 mOhms - 10 V, + 22 V 3 V 73 nC - 55 C + 175 C 375 W Enhancement AEC-Q101
STMicroelectronics MOSFET SiC Silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247-4 package
Scheda dati
100In ordine
Min: 1
Mult.: 1

Through Hole HiP247-4 N-Channel 1 Channel 1.2 kV 40 A 54 mOhms - 10 V, + 22 V 3.1 V 56 nC - 55 C + 200 C 312 W Enhancement AEC-Q101
STMicroelectronics MOSFET SiC Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ. TJ = 25 C) in an HiP247
Scheda dati
6916/03/2026 previsto
Min: 1
Mult.: 1

Through Hole HiP-247-3 N-Channel 1 Channel 650 V 119 A 24 mOhms - 10 V, + 22 V 5 V 157 nC - 55 C + 200 C 565 W Enhancement
STMicroelectronics MOSFET SiC Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mOhm typ., 110 A
Scheda dati
Tempo di consegna, se non a magazzino 16 settimane
Min: 1
Mult.: 1
Nastrati: 1.000

STMicroelectronics MOSFET SiC Automotive-grade silicon carbide Power MOSFET 650 V, 13.5 mOhm typ., 110 A
Scheda dati
Tempo di consegna, se non a magazzino 18 settimane
Min: 600
Mult.: 600
Nastrati: 600

STMicroelectronics MOSFET SiC Silicon carbide Power MOSFET 650 V, 13.5 mOhm typ., 110 A in a TO-LL package
Scheda dati
Tempo di consegna, se non a magazzino 19 settimane
Min: 1.800
Mult.: 1.800
Nastrati: 1.800

STMicroelectronics MOSFET SiC Silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
Scheda dati
Tempo di consegna, se non a magazzino 16 settimane
Min: 1.000
Mult.: 1.000
Nastrati: 1.000

SMD/SMT H2PAK-7 N-Channel 1 Channel 650 V 55 A 27 mOhms -10 V, 22 V 4.2 V 79.4 nC - 55 C + 175 C 385 W Enhancement