STMicroelectronics MOSFET

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Qtà RoHS Modello ECAD Tecnologia
Stile di montaggio
Package/involucro
Polarità transistor
Numero di canali
Vds - Tensione di rottura drain-source
Id - corrente di drain continua
Rds On - Drain-source sulla resistenza
Vgs - Tensione gate-source
Vgs th - Tensione di soglia gate-source
Qg - Carica del gate
Temperatura di lavoro minima
Temperatura di lavoro massima
Pd - Dissipazione di potenza
Modalità canale
Qualifica
Nome commerciale
Confezione
STMicroelectronics MOSFET N-Ch 600 Volt 11 Amp
Scheda dati
819A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 11 A 400 mOhms - 30 V, 30 V 3 V 40 nC - 65 C + 150 C 160 W Enhancement Tube
STMicroelectronics MOSFET N-Ch 500 Volt 12 Amp
Scheda dati
1.267A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 500 V 12 A 350 mOhms - 30 V, 30 V 3 V 39 nC - 65 C + 150 C 160 W Enhancement MDmesh Tube
STMicroelectronics MOSFET N-Ch 800 V 0.37 Ohm 12 A Zener-protect
Scheda dati
1.333A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 12 A 370 mOhms - 30 V, 30 V 4 V 29 nC - 55 C + 150 C 190 W Enhancement MDmesh Tube
STMicroelectronics MOSFET N-Ch 600 Volt 11 Amp Power MDmesh
Scheda dati
911A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 11 A 360 mOhms - 25 V, 25 V 2 V 27 nC - 55 C + 150 C 90 W Enhancement MDmesh Tube
STMicroelectronics MOSFET Automotive N-channel 100 V, 4.2 mOhm typ., 110 A, STripFET F7 Power MOSFET in a
Scheda dati
1.177A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 100 V 110 A 4.2 mOhms - 20 V, 20 V 4.5 V 117 nC - 55 C + 175 C 250 W Enhancement AEC-Q100 Tube
STMicroelectronics MOSFET N-Ch 800V 0.3Ohm 14A pwr MOSFET
Scheda dati
2.189A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 14 A 300 mOhms - 30 V, 30 V 4 V 32 nC - 55 C + 150 C 190 W Enhancement MDmesh Tube
STMicroelectronics MOSFET N-Ch 60 Volt 16 Amp
Scheda dati
5.693A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 60 V 16 A 100 mOhms - 20 V, 20 V 2 V 10 nC - 55 C + 175 C 45 W Enhancement STripFET Tube
STMicroelectronics MOSFET N-channel 40 V, 2.1 mOhm typ., 120 A STripFET F6 Power MOSFET in a TO-220 packag
Scheda dati
2.041A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 40 V 120 A 2.7 mOhms - 20 V, 20 V 3 V 130 nC - 55 C + 175 C 190 W Enhancement STripFET Tube
STMicroelectronics MOSFET N-CH 600V 0.255Ohm 13A MDmesh M2
Scheda dati
1.731A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 13 A 255 mOhms - 25 V, 25 V 3 V 21.5 nC - 55 C + 150 C 110 W Enhancement MDmesh Tube
STMicroelectronics MOSFET N-Ch 950V 0.275 Ohm 17.5A MDmesh K5
Scheda dati
3.284A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 950 V 17.5 A 330 mOhms - 30 V, 30 V 3 V 48 nC - 55 C + 150 C 250 W Enhancement MDmesh Tube
STMicroelectronics MOSFET N-Ch 500 Volt 20 Amp
Scheda dati
374A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 500 V 20 A 250 mOhms - 30 V, 30 V 3 V 56 nC - 65 C + 150 C 192 W Enhancement FDmesh Tube
STMicroelectronics MOSFET N-channel 800 V, 0.23 Ohm typ., 16 A MDmesh K5 Power MOSFET in a TO-220 package
Scheda dati
2.000A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 16 A 280 mOhms - 30 V, 30 V 4 V 33 nC - 55 C + 150 C 190 W Enhancement MDmesh Tube
STMicroelectronics MOSFET N-Ch 100V 2.5mOhm 180A STripFET VII
Scheda dati
1.099A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 100 V 110 A 3.2 mOhms - 20 V, 20 V 4.5 V 160 nC - 55 C + 175 C 300 W Enhancement STripFET Tube
STMicroelectronics MOSFET N-channel 600 V Mdmesh II Power
Scheda dati
1.499A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 20 A 165 mOhms - 25 V, 25 V 2 V 60 nC - 55 C + 150 C 140 W Enhancement MDmesh Tube
STMicroelectronics MOSFET N-channel 600 V, 0.13 Ohm typ., 21 A MDmesh DM2 Power MOSFET in TO-220 package
Scheda dati
3.071A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 22 A 130 mOhms - 25 V, 25 V 3 V 39 nC - 55 C + 150 C 190 W Enhancement MDmesh Tube
STMicroelectronics MOSFET N-Ch 500V 0.135 21A MDmesh II
Scheda dati
711A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 500 V 21 A 158 mOhms - 25 V, 25 V 4 V 50 nC - 55 C + 150 C 90 W Enhancement MDmesh Tube
STMicroelectronics MOSFET N-Ch 100V 2.7 mOhm 180A STripFET VII
Scheda dati
1.742A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 100 V 180 A 2.7 mOhms - 20 V, 20 V 2.5 V 180 nC - 55 C + 175 C 315 W Enhancement STripFET Tube
STMicroelectronics MOSFET N-CH 600V 0.108Ohm typ. 26A MDmesh M2
Scheda dati
767A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 26 A 108 mOhms - 25 V, 25 V 3 V 45.5 nC - 55 C + 150 C 190 W Enhancement MDmesh Tube
STMicroelectronics MOSFET N-Ch 600V 0.092 Ohm MDmesh II 29A Switch
Scheda dati
879A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 29 A 92 mOhms - 25 V, 25 V 2 V 84 nC - 55 C + 150 C 210 W Enhancement MDmesh Tube
STMicroelectronics MOSFET N-Ch 650 Volt 33 Amp
Scheda dati
536A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 33 A 70 mOhms - 25 V, 25 V 3 V 98 nC - 55 C + 150 C 190 W Enhancement MDmesh Tube
STMicroelectronics MOSFET N-Ch 300V 0.063Ohm 42A pwr MOSFET
Scheda dati
1.200A magazzino
1.00027/04/2026 previsto
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 300 V 42 A 63 mOhms - 20 V, 20 V 3 V 90 nC - 55 C + 175 C 300 W Enhancement AEC-Q100 STripFET Tube
STMicroelectronics MOSFET PowerMESH MOSFET
Scheda dati
1.487A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 1.5 kV 4 A 5 Ohms - 30 V, 30 V 3 V 50 nC - 55 C + 150 C 160 W Enhancement PowerMESH Tube
STMicroelectronics MOSFET N-Ch 800 Volt 3.0 A Zener SuperMESH
Scheda dati
2.120A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 3 A 3.5 Ohms - 30 V, 30 V 3 V 22.5 nC - 55 C + 150 C 80 W Enhancement Tube
STMicroelectronics MOSFET N Ch 250V 0.21 15A Pwr MOSFET
Scheda dati
1.826A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 250 V 45 A 69 mOhms - 20 V, 20 V 2 V 68.2 nC - 55 C + 150 C 160 W Enhancement STripFET Tube
STMicroelectronics MOSFET N-Ch 650V 0.056 Ohm 42 A MDmesh M5
Scheda dati
1.944A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 42 A 63 mOhms - 25 V, 25 V 3 V 98 nC - 55 C + 150 C 250 W Enhancement MDmesh Tube