Tube JFET

Risultati: 18
Seleziona Immagine Codice Produttore Descrizione Scheda dati Disponibilità Prezzi (EUR) Filtra i risultati nella tabella per prezzo unitario in base alla quantità. Qtà RoHS Modello ECAD Tecnologia Stile di montaggio Package/involucro Polarità transistor Configurazione Vds - Tensione di rottura drain-source Vgs - Tensione di rottura gate-source Tensione di taglio gate-source Corrente drain-source a Vgs=0 Id - corrente di drain continua Rds On - Drain-source sulla resistenza Pd - Dissipazione di potenza Temperatura di lavoro minima Temperatura di lavoro massima Serie Qualifica Confezione
onsemi JFET 650V/25MOSICJFETG3TO2 609A magazzino
Min: 1
Mult.: 1

SiC Through Hole TO-247-3 N-Channel Single 650 V 20 V 85 A 25 mOhms 441 W - 55 C + 175 C UJ3N AEC-Q101 Tube
onsemi JFET 1200V/65MOSICJFETG3TO 538A magazzino
Min: 1
Mult.: 1

SiC Through Hole TO-247-3 N-Channel Single 1.2 kV - 20 V to 3 V 5 uA 34 A 90 mOhms 254 W - 55 C + 175 C UJ3N AEC-Q101 Tube
Linear Integrated Systems JFET Wideband, High Gain, Monolithic Dual, N- Channel JFET 62A magazzino
Min: 1
Mult.: 1

Si SMD/SMT SOIC-8 N-Channel Dual - 25 V - 25 V - 5 V 40 mA 5 mA 500 mW - 55 C + 150 C LS5911 Tube
Linear Integrated Systems JFET Low Noise, Monolithic Dual, N-Channel JFET 25A magazzino
Min: 1
Mult.: 1

SMD/SMT SOIC-8 N-Channel Dual 40 V - 40 V 6 mV 30 mA 2 mA 400 mW - 55 C + 150 C LSK389 Tube
onsemi JFET UF3N120007K4S 1.423A magazzino
Min: 1
Mult.: 1

SiC Through Hole TO-247-4 N-Channel Single 1.2 kV - 30 V to 30 V 20 uA 120 A 7.1 mOhms 789 W - 55 C + 175 C UF3N Tube
onsemi JFET 750V/9MOCOMBO-FETG4TO2 575A magazzino
Min: 1
Mult.: 1

SiC Through Hole TO-247-4 N-Channel Single 750 V - 30 V to 30 V 4 uA 106 A 8.4 mOhms 375 W - 55 C + 175 C UG4S Tube
onsemi JFET UJ4N075005K4S 437A magazzino
Min: 1
Mult.: 1

SiC Through Hole TO-247-4 N-Channel Single 750 V - 30 V to 30 V 13 uA 120 A 4.8 mOhms 714 W - 55 C + 175 C UJ4N Tube
onsemi JFET 1200V/9MOSICFETDGG3TO247-4 617A magazzino
Min: 1
Mult.: 1

SiC Through Hole TO-247-4 N-Channel Single 1.2 kV - 25 V to 25 V 6 uA 120 A 7.6 mOhms 789 W - 55 C + 175 C UG3S Tube
onsemi JFET 1200V/35MOSICJFETG3TO 604A magazzino
Min: 1
Mult.: 1

SiC Through Hole TO-247-3 N-Channel Single 1.2 kV 20 V 63 A 35 mOhms 429 W - 55 C + 175 C UJ3N AEC-Q101 Tube
onsemi JFET 750V/6MOCOMBO-FETG4TO247-4 325A magazzino
Min: 1
Mult.: 1

SiC Through Hole TO-247-4 N-Channel Single 750 V - 30 V to 30 V 6 uA 120 A 5.3 mOhms 714 W - 55 C + 175 C UG4S Tube
onsemi JFET 750V/11MOCOMBO-FETG4TO247-4 558A magazzino
Min: 1
Mult.: 1

SiC Through Hole TO-247-4 N-Channel Single 750 V - 30 V to 30 V 3.5 uA 104 A 10 mOhms 357 W - 55 C + 175 C UG4S Tube
InterFET JFET JFET P-Channel 30V Low Noise 3.583A magazzino
Min: 1
Mult.: 1

Si SMD/SMT SOT-23-3 P-Channel Single - 15 V 30 V 2.25 V - 20 mA - 10 nA 300 Ohms 360 mW - 55 C + 125 C SMPJ177 Tube
onsemi JFET 650V/80MOSICJFETG3TO2 529A magazzino
Min: 1
Mult.: 1

SiC Through Hole TO-247-3 N-Channel Single 650 V 20 V 32 A 80 mOhms 190 W - 55 C + 175 C UJ3N AEC-Q101 Tube
onsemi JFET 1200V/70MOSICJFETG3TO 513A magazzino
Min: 1
Mult.: 1

SiC Through Hole TO-247-3 N-Channel Single 1.2 kV 20 V 33.5 A 70 mOhms 254 W - 55 C + 175 C UJ3N AEC-Q101 Tube
Linear Integrated Systems JFET Low Noise, Monolithic Dual, N-Channel JFET 1.798A magazzino
Min: 1
Mult.: 1

SMD/SMT SOIC-8 N-Channel Dual 40 V - 40 V 6 mV 6.5 mA 2 mA 400 mW - 55 C + 150 C LSK389 Tube
Linear Integrated Systems JFET Wideband, High Gain, Monolithic Dual, N- Channel JFET Non disponibile a magazzino
Min: 1
Mult.: 1

Si SMD/SMT SOIC-8 N-Channel Dual - 25 V - 25 V - 5 V 40 mA 5 mA 500 mW - 55 C + 150 C LS5911 Tube
Linear Integrated Systems JFET Wideband, High Gain, Monolithic Dual, N- Channel JFET Non disponibile a magazzino
Min: 1
Mult.: 1

Si SMD/SMT SOIC-8 N-Channel Dual - 25 V - 25 V - 5 V 40 mA 5 mA 500 mW - 55 C + 150 C LS5911 Tube
Linear Integrated Systems JFET Low Noise, Monolithic Dual, N-Channel JFET Non disponibile a magazzino
Min: 1
Mult.: 1

SMD/SMT SOIC-8 N-Channel Dual 40 V - 40 V 6 mV 12 mA 2 mA 400 mW - 55 C + 150 C LSK389 Tube