Electronic Vehicle (EV) Solutions

ROHM Semiconductor Electronic Vehicle (EV) Solutions are designed to improve efficiency and performance in state-of-the-art EVs. ROHM offers products optimized for various solutions, with a focus on dedicated EV blocks, such as the main inverter, DC-DC converter, onboard charger, and electric compressor.

Risultati: 1.385
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ROHM Semiconductor MOSFET 100V 4.5A Dual Nch+Pch, SOP8, Power MOSFET 1.718A magazzino
Min: 1
Mult.: 1
Nastrati: 2.500

ROHM Semiconductor MOSFET 100V 2.0A Dual Nch+Nch, DFN2020-8D, Power MOSFET 14.502A magazzino
Min: 1
Mult.: 1
Nastrati: 3.000

ROHM Semiconductor MOSFET 100V 2.0A/1.0A, Dual Nch+Pch, DFN2020-8D, Power MOSFET 17.338A magazzino
Min: 1
Mult.: 1
Nastrati: 3.000

ROHM Semiconductor Diodi e raddrizzatori Schottky Trench MOS Structure, 100V, 10A, TO-277A, Highly Efficient SBD for Automotive: The YQ10RSM10SDTF is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable opera 7.353A magazzino
Min: 1
Mult.: 1
Nastrati: 4.000

ROHM Semiconductor Diodi e raddrizzatori Schottky Trench MOS Structure, 100V, 10A, TO-277A, Highly Efficient SBD: The YQ10RSM10SD is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high temp 7.594A magazzino
Min: 1
Mult.: 1
Nastrati: 4.000

ROHM Semiconductor Diodi e raddrizzatori Schottky Trench MOS Structure, 100V, 12A, TO-277GE, Highly Efficient SBD 3.980A magazzino
Min: 1
Mult.: 1
Nastrati: 4.000

ROHM Semiconductor Diodi e raddrizzatori Schottky Trench MOS Structure, 100V, 12A, TO-277GE, Highly Efficient SBD 3.668A magazzino
Min: 1
Mult.: 1
Nastrati: 4.000

ROHM Semiconductor Diodi e raddrizzatori Schottky Trench MOS Structure, 100V, 15A, TO-277GE, Highly Efficient SBD 5.672A magazzino
Min: 1
Mult.: 1
Nastrati: 4.000

ROHM Semiconductor Diodi e raddrizzatori Schottky Trench MOS Structure, 100V, 15A, TO-277GE, Highly Efficient SBD 4.095A magazzino
Min: 1
Mult.: 1
Nastrati: 4.000

ROHM Semiconductor Diodi e raddrizzatori Schottky Trench MOS Structure, 100V, 20A, TO-252, Highly Efficient SBD: The YQ20BGE10SD is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high tempe 4.820A magazzino
Min: 1
Mult.: 1
Nastrati: 2.500

ROHM Semiconductor Diodi e raddrizzatori Schottky Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD for Automotive: The YQ20NL10CDFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operat 1.900A magazzino
Min: 1
Mult.: 1
Nastrati: 1.000

ROHM Semiconductor Diodi e raddrizzatori Schottky Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD: The YQ20NL10CD is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high tempe 1.970A magazzino
Min: 1
Mult.: 1
Nastrati: 1.000

ROHM Semiconductor Diodi e raddrizzatori Schottky Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD for Automotive: The YQ20NL10SEFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operat 2.000A magazzino
Min: 1
Mult.: 1
Nastrati: 1.000

ROHM Semiconductor Diodi e raddrizzatori Schottky Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD: The YQ20NL10SE is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high tempe 1.988A magazzino
Min: 1
Mult.: 1
Nastrati: 1.000

ROHM Semiconductor Diodi e raddrizzatori Schottky Trench MOS Structure, 100V, 30A, TO-263L, Highly Efficient SBD: The YQ30NL10SE is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high tempe 1.908A magazzino
Min: 1
Mult.: 1
Nastrati: 1.000

ROHM Semiconductor Diodi e raddrizzatori Schottky Trench MOS Structure, 100V, 3A, TO-277GE, Highly Efficient SBD 3.852A magazzino
Min: 1
Mult.: 1
Nastrati: 4.000

ROHM Semiconductor Diodi e raddrizzatori Schottky Trench MOS Structure, 100V, 5A, TO-277GE, Highly Efficient SBD 3.900A magazzino
Min: 1
Mult.: 1
Nastrati: 4.000

ROHM Semiconductor Diodi e raddrizzatori Schottky Trench MOS Structure, 100V, 5A, TO-277GE, Highly Efficient SBD 3.955A magazzino
Min: 1
Mult.: 1
Nastrati: 4.000

ROHM Semiconductor Diodi e raddrizzatori Schottky Trench MOS Structure, 100V, 8A, TO-277GE, Highly Efficient SBD 3.867A magazzino
Min: 1
Mult.: 1
Nastrati: 4.000

ROHM Semiconductor Diodi e raddrizzatori Schottky Trench MOS Structure, 100V, 8A, TO-277GE, Highly Efficient SBD 3.905A magazzino
Min: 1
Mult.: 1
Nastrati: 4.000

ROHM Semiconductor MOSFET Transistor, MOSFET Pch, -60V(Vdss), -70A(Id), (4.5V, 6.0V Drive) 37.371A magazzino
Min: 1
Mult.: 1
Nastrati: 2.500

ROHM Semiconductor Diodi e raddrizzatori Schottky Schottky Barrier Diode RASMID™ Series, 20V, 2A, SOD-882 (DSN1006-2) 2.692A magazzino
Min: 1
Mult.: 1
Nastrati: 18.000

ROHM Semiconductor Diodi e raddrizzatori Schottky Schottky Barrier Diode Super Low IR, 30V, 2A, DO-214AC (SMA) 2.208A magazzino
Min: 1
Mult.: 1
Nastrati: 1.500

ROHM Semiconductor Diodi e raddrizzatori Schottky 30V, 2A, Single, PMDE, Ultra low IR SBD 2.730A magazzino
Min: 1
Mult.: 1
Nastrati: 3.000

ROHM Semiconductor Diodi e raddrizzatori Schottky 30V, 2A, Single, PMDE, Ultra low IR SBD 4.842A magazzino
Min: 1
Mult.: 1
Nastrati: 3.000