Tipi di Transistor
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Infineon Technologies OptiMOS™ 8 Power MOSFETs
03/17/2026
03/17/2026
These are N-channel, normal level 80V or 100V MOSFETs with very low on-resistance [RDS(ON)].
Infineon Technologies Medium-Voltage CoolGaN™ Bidirectional Switches
03/17/2026
03/17/2026
These devices are a great fit for serving as battery disconnect switches in various applications.
ROHM Semiconductor BST400D12P4A1x1 TRCDRIVE pack™ with Molded Modules
03/17/2026
03/17/2026
Features 1200V rated voltage in 41.6mm × 52.5mm package and integrates 4th Generation SiC MOSFETs.
onsemi NVMFD5873NL Dual N-Channel Power MOSFETs
03/13/2026
03/13/2026
Designed for compact and efficient designs, including high thermal performance.
Diotec Semiconductor DI009N10PQ N-Channel Power MOSFET
03/10/2026
03/10/2026
Supports a drain‑source voltage of 100V and delivers 9A continuous drain current at 25°C.
Diotec Semiconductor DI040N10D1-AQ N-Channel Power MOSFET
03/10/2026
03/10/2026
Supports a drain‑source voltage of 100V and delivers 40A continuous drain current at 25°C.
Diotec Semiconductor DI050N04BPT-AQ N-Channel Power MOSFET
03/10/2026
03/10/2026
Supports a drain‑source voltage of 40V and delivers 50A continuous drain current at 25°C.
Diotec Semiconductor DI045N10PT-AQ N-Channel Power MOSFET
03/10/2026
03/10/2026
Supports a drain‑source voltage of 100V and delivers 45A continuous drain current at 25°C.
Qorvo QPD2560L 300W GaN/SiC HEMT
03/09/2026
03/09/2026
Designed for demanding L‑Band applications, operating across the 1.0GHz to 1.5GHz frequency range.
Diotec Semiconductor DIJ2A7N90 N-Channel Power MOSFET
03/06/2026
03/06/2026
Supports a drain‑source voltage of 900V and delivers 2.7A at 25°C continuous drain current.
EPC EPC2302 Enhancement-Mode GaN Power Transistor
03/05/2026
03/05/2026
Engineered for high-frequency DC-DC applications and 48V BLDC motor drives.
EPC EPC2304 Enhancement-Mode GaN Power Transistor
03/05/2026
03/05/2026
Handles tasks where ultra-high switching frequency and low on-time are advantageous.
EPC EPC2305 Enhancement-Mode GaN Power Transistor
03/05/2026
03/05/2026
Offers a low-inductance 3mm x 5mm QFN package with an exposed top for excellent thermal management.
Infineon Technologies MOSFET di potenza OptiMOS™ 7 a canale N da 80 V
03/05/2026
03/05/2026
Dispositivi a canale N da 80 V, di livello standard, con resistenza termica superiore, in package PG‑TDSON‑8.
Navitas Semiconductor NV6428 Bi-Directional GaNFast™ Power Switches
02/26/2026
02/26/2026
Designed to block voltage in both directions using unique substrate clamp technology.
Navitas Semiconductor NV6427 Bi-Directional GaNFast™ Power Switches
02/26/2026
02/26/2026
Switches are designed to block voltage in both directions, with unique substrate-clamp technology.
Navitas Semiconductor NV60x GaNFast™ Power FETs
02/26/2026
02/26/2026
Enhancement‑mode GaN power devices engineered for fast‑switching, high‑efficiency power systems.
iDEAL Semiconductor iS20M5R5S1T 200V N-channel SuperQ™ Power MOSFETs
02/19/2026
02/19/2026
Features low switching losses, QSW, and EOSS, suitable for high-efficiency SMPS and motor drives.
TDK-Lambda Moduli MOSFET ORing i1R
02/05/2026
02/05/2026
Dispositivi di potenza ad alta efficienza e a basse perdite progettati per sostituire i diodi tradizionali.
IXYS MOSFET di potenza X4-Class
02/02/2026
02/02/2026
Offrono bassa resistenza in stato attivo e basse perdite di conduzione, con un'efficienza migliorata.
Qorvo Transistori GaN con adattamento di ingresso QPD1014A
01/20/2026
01/20/2026
HEMT GaN su SiC discreti con adattamento di ingresso da 15 W (P3dB), 50 Ω, che operano da 30 MHz a 1,2 GHz.
Qorvo Transistori GaN con adattamento di ingresso QPD1011A
01/19/2026
01/19/2026
HEMT GaN su SiC discreti da 7 W (P3dB), con adattamento di ingresso a 50 Ω, operanti da 30 MHz a 1,2 GHz.
Qorvo Transistori QPD1004A GaN con adattamento di ingresso
01/19/2026
01/19/2026
I transistori discreti GaN con adattamento di ingresso da 25 W, 50 Ω su HEMT in carburo di silicio (SiC) funzionano da 30 MHz a 1.400 MHz su un rail di alimentazione da 50 V.
onsemi MOSFET di potenza a canale N da 80 V NVBYST0D6N08X
12/26/2025
12/26/2025
Questo dispositivo offre una bassa QRR e un diodo corpo a recupero morbido in un package TCPAK1012 (TopCool).
Infineon Technologies MOSFET di potenza OptiMOS™ 6 80 V
12/23/2025
12/23/2025
Imposta il benchmark del settore prestazioni con un'offerta di portafoglio ampio.
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