Tray DRAM

Risultati: 911
Seleziona Immagine Codice Produttore Descrizione Scheda dati Disponibilità Prezzi (EUR) Filtra i risultati nella tabella per prezzo unitario in base alla quantità. Qtà RoHS Modello ECAD Tipo Dimensioni memoria Larghezza bus dati Frequenza di clock massima Package/involucro Organizzazione Tempo di accesso Tensione di alimentazione - Min. Tensione di alimentazione - Max. Temperatura di lavoro minima Temperatura di lavoro massima Serie Confezione
Alliance Memory DRAM 128M 166MHz 8Mx16 Mobile LP SDRAM IT 32A magazzino
Min: 1
Mult.: 1

SDRAM Mobile 128 Mbit 16 bit 166 MHz FBGA-54 8 M x 16 5.5 ns 1.7 V 1.95 V - 40 C + 85 C AS4C8M16MSA-6 Tray
Alliance Memory DRAM LPDDR4, 2G, 128M x 16, 1.1V, 200 BALL TFBGA, 1600MHZ, ECC, AUTO TEMP - Tray 19A magazzino
Min: 1
Mult.: 1

SDRAM Mobile - LPDDR4 2 Gbit 16 bit 1.6 GHz FBGA-200 128 M x 16 3.5 ns 1.06 V 1.95 V - 40 C + 105 C Tray
Alliance Memory AS4C4M32SA-6TCN
Alliance Memory DRAM SDRAM, 128MB, 4M X 32, 3.3V, 86PIN TSOP II, 166 MHZ, COMMERCIAL TEMP - Tray 64A magazzino
Min: 1
Mult.: 1

SDRAM 128 Mbit 32 bit 166 MHz TSOP-II-86 4 M x 32 5.4 ns 3 V 3.6 V 0 C + 70 C Tray
Alliance Memory AS4C4M32SA-7TCN
Alliance Memory DRAM SDRAM, 128MB, 4M X 32, 3.3V, 86PIN TSOP II, 143 MHZ, COMMERCIAL TEMP - Tray 107A magazzino
Min: 1
Mult.: 1

SDRAM 128 Mbit 32 bit 143 MHz TSOP-II-86 4 M x 32 5.4 ns 3 V 3.6 V 0 C + 70 C Tray
ISSI DRAM 256M 32Mx8 143MHz SDR SDRAM, 3.3V 38A magazzino
Min: 1
Mult.: 1

SDRAM 256 Mbit 8 bit 143 MHz TSOP-II-54 32 M x 8 5.4 ns 3 V 3.6 V - 40 C + 85 C IS42S83200G Tray
Zentel Japan DRAM DDR2 512Mb, 64Mx8, 800 at CL5, 1.8V, FBGA-60 63A magazzino
Min: 1
Mult.: 1

SDRAM - DDR2 512 Mbit 8 bit 400 MHz FPGA-60 64 M x 8 400 ps 1.7 V 1.9 V 0 C + 85 C DDR2 Tray
Winbond W632GU6RB-11
Winbond DRAM 2Gb DDR3L 1.35V SDRAM, x16, 933MHz 58A magazzino
39630/07/2026 previsto
Min: 1
Mult.: 1
Max.: 100

Tray
Winbond W9812G6KB-6I
Winbond DRAM 128Mb SDR SDRAM x16, 166MHz, Ind temp 119A magazzino
Min: 1
Mult.: 1
Max.: 100

Tray
Winbond W9825G6KB-6I
Winbond DRAM 256Mb SDR SDRAM x16, 166MHz, Ind Temp 314A magazzino
Min: 1
Mult.: 1
Max.: 100

Tray
Winbond W9864G6KT-6
Winbond DRAM 64Mb, SDR SDRAM, x16, 166MHz, 46nm 199A magazzino
Min: 1
Mult.: 1
Max.: 100

SDRAM 64 Mbit 16 bit 166 MHz TFBGA-54 4 M x 16 6 ns 3 V 3.6 V 0 C + 70 C Tray
ISSI DRAM 256M (16Mx16) 166MHz 2.5v DDR SDRAM 349A magazzino
Min: 1
Mult.: 1

SDRAM - DDR 256 Mbit 16 bit 166 MHz TSOP-II-66 16 M x 16 6 ns 2.3 V 2.7 V - 40 C + 85 C IS43R16160D Tray
ISSI DRAM 4M,3.3V EDO DRAM Async,256Kx16,35ns 129A magazzino
Min: 1
Mult.: 1

EDO DRAM 4 Mbit 16 bit TSOP-II-40 256 k x 16 35 ns 3 V 3.6 V - 40 C + 85 C IS41LV16256C Tray
Alliance Memory DRAM 512Mb, 3.3V, 200Mhz 32M x 16 DDR 1A magazzino
Min: 1
Mult.: 1

SDRAM - DDR 512 Mbit 16 bit 200 MHz TSOP-II-66 32 M x 16 700 ps 2.3 V 2.7 V 0 C + 70 C AS4C32M16D1 Tray
ISSI DRAM 128M 4Mx32 143MHz SDR SDRAM 3.3v 319A magazzino
Min: 1
Mult.: 1

SDRAM 128 Mbit 32 bit 143 MHz TSOP-II-86 4 M x 32 5.5 ns 3 V 3.6 V - 40 C + 85 C IS45S32400F Tray
Intelligent Memory DRAM LPDDR4,4Gb,256Mx16,2133MHz (4266Mbps),1.1V,FBGA-200,-40C to +85C
54429/09/2026 previsto
Min: 1
Mult.: 1

LPDDR4 Tray
Intelligent Memory DRAM LPDDR4or4x Combo,32Gb,1024Mx32,2133MHz (4266Mbps),1.1V/0.6V,FBGA-200,-25C to +85C
28831/07/2026 previsto
Min: 1
Mult.: 1

LPDDR4or4x Combo Tray
Intelligent Memory DRAM LPDDR4or4x Combo,32Gb,1024Mx32,2133MHz (4266Mbps),1.1V/0.6V,FBGA-200,-40C to +95C
28831/07/2026 previsto
Min: 1
Mult.: 1

LPDDR4or4x Combo Tray
ISSI DRAM 512M, 1.8V, 400Mhz 32M x 16 DDR2 77A magazzino
Min: 1
Mult.: 1

SDRAM - DDR2 512 Mbit 16 bit 400 MHz BGA-84 32 M x 16 400 ps 1.7 V 1.9 V - 40 C + 85 C IS46DR16320D Tray
AP Memory DRAM IoT RAM 128Mb OPI (x8) DDR 133MHz, 3V, Ext. Temp., BGA24
4.80006/07/2026 previsto
Min: 1
Mult.: 1

PSRAM (Pseudo SRAM) 128 Mbit 8 bit 133 MHz BGA-24 16 M x 8 5.5 ns 2.7 V 3.6 V - 40 C + 105 C IoT RAM Tray
AP Memory DRAM IoT RAM 256Mb OPI (x8,x16) DDR 250MHz, 1.8V, Ind. Temp., BGA24
4.77721/07/2026 previsto
Min: 1
Mult.: 1

PSRAM (Pseudo SRAM) 256 Mbit 8 bit / 16 bit 250 MHz BGA-24 32 M x 8/16 M x 16 1.62 V 1.98 V - 40 C + 85 C IoT RAM Tray
Alliance Memory DRAM DDR1, 1G, 64M X 16, 2.5V, 60-BALL BGA, 166 MHZ, INDUSTRIAL TEMP - Tray 5A magazzino
Min: 1
Mult.: 1

SDRAM - DDR 1 Gbit 16 bit 166 MHz FBGA-60 64 M x 16 700 ps 2.3 V 2.7 V - 40 C + 85 C AS4C64M16D1A Tray
Alliance Memory DRAM LPDDR4, 4G, 256M x 16, 1.1V, 200 BALL TFBGA, 1600MHZ, ECC, AUTO TEMP - Tray 5A magazzino
Min: 1
Mult.: 1

SDRAM - LPDDR4 4 Gbit 16 bit 1.6 GHz FBGA-200 256 M x 16 3.5 ns 1.06 V 1.95 V - 40 C + 105 C Tray
ISSI DRAM 256Mb, 1.8V, 267MHz 16Mx16 DDR2 SDRAM 426A magazzino
Min: 1
Mult.: 1

SDRAM - DDR2 256 Mbit 16 bit 266 MHz WBGA-84 16 M x 16 500 ps 1.7 V 1.9 V - 40 C + 95 C IS43DR16160B Tray
ISSI DRAM 512M (32Mx16) 166MHz 2.5v DDR SDRAM 148A magazzino
Min: 1
Mult.: 1

SDRAM - DDR 512 Mbit 16 bit 166 MHz TSOP-II-66 32 M x 16 6 ns 2.3 V 2.7 V - 40 C + 85 C IS43R16320D Tray
ISSI DRAM 512M (64Mx8) 166MHz 2.5v DDR SDRAM 135A magazzino
Min: 1
Mult.: 1

SDRAM - DDR 512 Mbit 8 bit 166 MHz TSOP-II-66 64 M x 8 6 ns 2.3 V 2.7 V - 40 C + 85 C IS43R86400D Tray