256 Mbit DRAM

Risultati: 270
Seleziona Immagine Codice Produttore Descrizione Scheda dati Disponibilità Prezzi (EUR) Filtra i risultati nella tabella per prezzo unitario in base alla quantità. Qtà RoHS Modello ECAD Tipo Dimensioni memoria Larghezza bus dati Frequenza di clock massima Package/involucro Organizzazione Tempo di accesso Tensione di alimentazione - Min. Tensione di alimentazione - Max. Temperatura di lavoro minima Temperatura di lavoro massima Serie Confezione
ISSI DRAM 256M, 3.3V, SDRAM, 8Mx32, 143Mhz, 86 pin TSOP II RoHS, T&R
385In ordine
Min: 1
Mult.: 1
: 1.500
SDRAM 256 Mbit 32 bit 143 MHz TSOP-II-86 8 M x 32 6.5 ns 3 V 3.6 V 0 C + 70 C IS42S32800J Reel, Cut Tape, MouseReel
ISSI DRAM 256M, 3.3V, SDRAM, 32Mx8, 143MHz, 54 pin TSOP II (400 mil) RoHS, IT
41428/07/2027 previsto
Min: 1
Mult.: 1

SDRAM 256 Mbit 8 bit 143 MHz TSOP-II-54 32 M x 8 5.4 ns 3 V 3.6 V - 40 C + 85 C IS42S83200J
ISSI DRAM Automotive (-40 to +105C), 256M, 3.3V, SDRAM, 16Mx16, 143MHz, 54 pin TSOP II RoHS
972In ordine
Min: 1
Mult.: 1

SDRAM 256 Mbit 16 bit 143 MHz TSOP-II-54 16 M x 16 5.4 ns 3 V 3.6 V - 40 C + 105 C IS45S16160J
ISSI DRAM 256M, 3.3V, SDRAM 16Mx16, 166MHz
2.475In ordine
Min: 1
Mult.: 1

SDRAM 256 Mbit 16 bit 166 MHz TSOP-II-54 1 M x 16 6 ns 3 V 3.6 V - 40 C + 85 C IS42S16160J
ISSI DRAM 256M, 3.3V, SDRAM, 16Mx16, 166Mhz, 54 ball BGA (8mmx8mm) RoHS, IT
1.195In ordine
Min: 1
Mult.: 1

SDRAM 256 Mbit 8 bit/16 bit 166 MHz BGA-54 32 M x 8/16 M x 16 6.5 ns 3 V 3.6 V - 40 C + 85 C
ISSI DRAM 256M, 3.3V, SDRAM, 16Mx16, 166MHz, 54 pin TSOP II RoHS
427In ordine
Min: 1
Mult.: 1

SDRAM 256 Mbit 8 bit/16 bit 166 MHz TSOP-II-54 32 M x 8/16 M x 16 6.5 ns 3 V 3.6 V 0 C + 70 C
ISSI DRAM 256M, 3.3V, SDRAM, 16Mx16, 166MHz, 54 pin TSOP II RoHS, IT
1.508In ordine
Min: 1
Mult.: 1

SDRAM 256 Mbit 8 bit/16 bit 166 MHz TSOP-II-54 32 M x 8/16 M x 16 6.5 ns 3 V 3.6 V - 40 C + 85 C
ISSI DRAM 256M, 3.3V, SDRAM, 16Mx16, 143Mhz, 54 ball BGA (8mmx8mm) RoHS, IT
1.044In ordine
Min: 1
Mult.: 1

SDRAM 256 Mbit 8 bit/16 bit 143 MHz BGA-54 32 M x 8/16 M x 16 5.5 ns 3 V 3.6 V - 40 C + 85 C
ISSI DRAM 256M, 3.3V, SDRAM, 16Mx16, 143MHz, 54 pin TSOP II RoHS, IT
1.536In ordine
Min: 1
Mult.: 1

SDRAM 256 Mbit 8 bit/16 bit 143 MHz TSOP-II-54 32 M x 8/16 M x 16 5.5 ns 3 V 3.6 V - 40 C + 85 C
ISSI DRAM 256M, 3.3V, 166Mhz 16Mx16 Mobile SDR
1.39221/12/2026 previsto
Min: 1
Mult.: 1

SDRAM Mobile 256 Mbit 16 bit 166 MHz BGA-54 16 M x 16 6 ns 2.7 V 3.6 V - 40 C + 85 C IS42SM16160K Tray
ISSI DRAM 256M, 3.3V, Mobile SDRAM, 8Mx32, 166Mhz, 90 ball BGA (8mmx13mm) RoHS, IT
23912/07/2027 previsto
Min: 1
Mult.: 1

SDRAM Mobile 256 Mbit 32 bit 166 MHz BGA-90 8 M x 32 5.5 ns 2.7 V 3.6 V - 40 C + 85 C IS42SM32800K Tray
ISSI DRAM 256M, 1.8V, 166Mhz 16Mx16 Mobile SDR
32326/11/2026 previsto
Min: 1
Mult.: 1

SDRAM Mobile 256 Mbit 16 bit 166 MHz BGA-54 16 M x 16 6 ns 1.7 V 1.95 V - 40 C + 85 C IS42VM16160K Tray
ISSI DRAM 256M, 2.5V, DDR, 16Mx16, 166MHz
648In ordine
Min: 1
Mult.: 1

SDRAM - DDR 256 Mbit 16 bit 166 MHz TSOP-II-66 16 M x 16 700 ps 2.3 V 2.7 V - 40 C + 85 C IS43R16160F Tray
Alliance Memory DRAM SDRAM, 256Mb, 16M x 16, 3.3V, 54pin TSOP II, 166 Mhz, automotive temp - Tray
21210/08/2026 previsto
Min: 1
Mult.: 1

SDRAM 256 Mbit 16 bit 166 MHz TSOP-II-54 16 M x 16 5 ns 3 V 3.6 V - 40 C + 105 C Tray
ISSI IS66WVH32M8DALL-166B1LI
ISSI DRAM 256Mb, HyperRAM, 32Mbx8, 1.8V, 166MHz, 24-ball TFBGA, RoHS
960In ordine
Min: 1
Mult.: 1
HyperRAM 256 Mbit 8 bit 166 MHz 32 M x 8 36 ns 1.7 V 1.95 V - 40 C + 85 C
ISSI DRAM 256M, 3.3V, SDRAM, 8Mx32, 143Mhz, 86 pin TSOP II RoHS
996In ordine
Min: 1
Mult.: 1

SDRAM 256 Mbit 32 bit 143 MHz TSOP-II-86 8 M x 32 6.5 ns 3 V 3.6 V 0 C + 70 C IS42S32800J Tray
ISSI DRAM 256M, 3.3V, SDRAM, 16Mx16, 143Mhz, 54 ball BGA (8mmx8mm) RoHS
34807/08/2026 previsto
Min: 1
Mult.: 1

SDRAM 256 Mbit 8 bit/16 bit 143 MHz BGA-54 32 M x 8/16 M x 16 5.5 ns 3 V 3.6 V 0 C + 70 C
ISSI DRAM 256M, 3.3V, SDRAM, 16Mx16, 143MHz, 54 pin TSOP II RoHS
10305/08/2026 previsto
Min: 1
Mult.: 1

SDRAM 256 Mbit 8 bit/16 bit 143 MHz TSOP-II-54 32 M x 8/16 M x 16 5.5 ns 3 V 3.6 V 0 C + 70 C
Intelligent Memory DRAM SDRAM, 256Mb, 3.3V, 16Mx16, 166MHz (166Mbps), 0C to +70C, FBGA-54 Tempo di consegna, se non a magazzino 8 settimane
Min: 1
Mult.: 1

SDRAM 256 Mbit 16 bit 166 MHz FBGA-54 16 M x 16 5 ns 3 V 3.6 V 0 C + 70 C IM2516SD Tray
Intelligent Memory DRAM SDRAM, 256Mb, 3.3V, 16Mx16, 166Mhz (1666Mbps), -40C to +85C, FBGA-54 Tempo di consegna, se non a magazzino 8 settimane
Min: 1
Mult.: 1

SDRAM 256 Mbit 16 bit 166 MHz FBGA-54 16 M x 16 5 ns 3 V 3.6 V - 40 C + 85 C IM2516SD Tray
Infineon Technologies DRAM SPCM Tempo di consegna, se non a magazzino 26 settimane
Min: 1
Mult.: 1

HyperRAM 256 Mbit 200 MHz FBGA-24 35 ns 1.7 V 2 V - 40 C + 105 C Tray
AP Memory DRAM IoT RAM 256Mb OPI (x8) DDR 200MHz, 1.8V, Ind. Temp., BGA24 (OctaRAM for Renesas RZ/A SoC) Tempo di consegna, se non a magazzino 20 settimane
Min: 4.800
Mult.: 4.800

PSRAM (Pseudo SRAM) 256 Mbit 8 bit 200 MHz BGA-24 32 M x 8 6.5 ns 1.62 V 1.98 V - 40 C + 85 C Tray
AP Memory DRAM IoT RAM 256Mb OPI (x8,x16) DDR 200MHz, 1.8V, Ind. Temp., WLCSP Suggested Alt APS256XXN-OB9-WA same density NRND Tempo di consegna, se non a magazzino 20 settimane
Min: 5.000
Mult.: 5.000
: 5.000

PSRAM (Pseudo SRAM) 256 Mbit 8 bit / 16 bit 200 MHz WLCSP-24 32 M x 8/16 M x 16 1.62 V 1.98 V - 40 C + 85 C IoT RAM Reel
Infineon Technologies S80KS2564GACHA040
Infineon Technologies DRAM SPCM Tempo di consegna, se non a magazzino 26 settimane
Min: 260
Mult.: 260

HyperRAM 256 Mbit 16 bit 200 MHz FBGA-49 35 ns 1.7 V 2 V - 40 C + 85 C Tray
Infineon Technologies S80KS2564GACHA043
Infineon Technologies DRAM SPCM Tempo di consegna, se non a magazzino 26 settimane
Min: 2.500
Mult.: 2.500
: 2.500

HyperRAM 256 Mbit 32 bit 200 MHz FBGA-49 35 ns 1.7 V 2 V - 40 C + 85 C Reel