200 MHz DRAM

Risultati: 172
Seleziona Immagine Codice Produttore Descrizione Scheda dati Disponibilità Prezzi (EUR) Filtra i risultati nella tabella per prezzo unitario in base alla quantità. Qtà RoHS Modello ECAD Tipo Dimensioni memoria Larghezza bus dati Frequenza di clock massima Package/involucro Organizzazione Tempo di accesso Tensione di alimentazione - Min. Tensione di alimentazione - Max. Temperatura di lavoro minima Temperatura di lavoro massima Serie Confezione
Alliance Memory DRAM DDR1, 512Mb, 32M X 16, 2.5V, 66pin TSOP II, 200 MHz, Commercial Temp A 58A magazzino
32424/06/2026 previsto
Min: 1
Mult.: 1

SDRAM - DDR 512 Mbit 16 bit 200 MHz TSOP-II-66 32 M x 16 700 ps 2.3 V 2.7 V 0 C + 70 C AS4C32M16D1A Tray
Alliance Memory DRAM DDR1, 128Mb, 8M x 16, 2.5V, 66pin TSOP II, 200 MHz, Commercial Temp A Die 73A magazzino
Min: 1
Mult.: 1

SDRAM - DDR 128 Mbit 16 bit 200 MHz TSOP-II-66 8 M x 16 700 ps 2.3 V 2.7 V 0 C + 70 C AS4C8M16D1A Tray
Alliance Memory DRAM DDR1, 128Mb, 8M x 16, 2.5V, 66pin TSOP II, 200 MHz, Industriall Temp A Die 108A magazzino
Min: 1
Mult.: 1

SDRAM - DDR 128 Mbit 16 bit 200 MHz TSOP-II-66 8 M x 16 700 ps 2.3 V 2.7 V - 40 C + 85 C AS4C8M16D1A Tray
Winbond DRAM 128Mb DDR SDRAM x16 200MHz, 46nm 204A magazzino
Min: 1
Mult.: 1
Max.: 100

SDRAM - DDR 128 Mbit 16 bit 200 MHz TSOP-II-66 8 M x 16 700 ps 2.3 V 2.7 V 0 C + 70 C W9412G6KH Tray
Winbond DRAM 512Mb LPDDR, x32, 200MHz 73A magazzino
Min: 1
Mult.: 1
Max.: 100

SDRAM Mobile - LPDDR 512 Mbit 32 bit 200 MHz VFBGA-90 16 M x 32 6.5 ns 1.7 V 1.95 V - 25 C + 85 C W949D2DB Tray
Winbond DRAM 1Gb LPDDR, x16, 200MHz 17A magazzino
Min: 1
Mult.: 1
Max.: 100

SDRAM Mobile - LPDDR 1 Gbit 16 bit 200 MHz VFBGA-60 64 M x 16 6.5 ns 1.7 V 1.95 V - 25 C + 85 C W94AD6KB Tray
Winbond DRAM 256Mb HyperRAM x16, 200MHz, Ind temp, 1.8V 54A magazzino
490In ordine
Min: 1
Mult.: 1
Max.: 100

HyperRAM 256 Mbit 16 bit 200 MHz WFBGA-49 35 ns 1.7 V 2 V - 40 C + 85 C Tray
Winbond DRAM 128Mb SDR SDRAM x16, 200MHz 87A magazzino
Min: 1
Mult.: 1
Max.: 100

SDRAM 128 Mbit 16 bit 200 MHz TSOP-II-54 8 M x 16 6 ns 3 V 3.6 V 0 C + 70 C W9812G6KH Tray
Alliance Memory DRAM LPDDR1, 2G, 64M x 32, 1.8v, 200MHz, 90-BALL FBGA, (A-die) Industrial Temp - Tray 50A magazzino
Min: 1
Mult.: 1

SDRAM Mobile - LPDDR 2 Gbit 32 bit 200 MHz FBGA-90 64 M x 32 6.5 ns 1.7 V 1.95 V - 40 C + 85 C Tray
Alliance Memory DRAM DDR1, 256Mb, 16M x 16, 2.5V, 60 BGA, 200MHz, Commercial Temp - Tray 1A magazzino
Min: 1
Mult.: 1

SDRAM - DDR 256 Mbit 16 bit 200 MHz TFBGA-60 16 M x 16 700 ps 2.3 V 2.7 V 0 C + 70 C AS4C16M16D1 Tray
Alliance Memory DRAM DDR1, 128MB, 4M X 32, 2.5V, 144BGA, 200MHZ, INDUSTRIAL TEMP - Tray 24A magazzino
Min: 1
Mult.: 1

SDRAM - DDR 128 Mbit 32 bit 200 MHz FBGA-144 4 M x 32 700 ps 2.3 V 2.7 V - 40 C + 85 C AS4C4M32D1A Tray
Alliance Memory DRAM 512Mb, 3.3V, 200Mhz 32M x 16 DDR 1A magazzino
Min: 1
Mult.: 1

SDRAM - DDR 512 Mbit 16 bit 200 MHz TSOP-II-66 32 M x 16 700 ps 2.3 V 2.7 V 0 C + 70 C AS4C32M16D1 Tray
ISSI DRAM 256M (16Mx16) 200MHz 2.5v DDR SDRAM 5A magazzino
Min: 1
Mult.: 1

SDRAM - DDR 256 Mbit 32 bit 200 MHz LFBGA-144 8 M x 32 5 ns 2.3 V 2.7 V 0 C + 70 C IS43R32800D Tray
ISSI DRAM 512M, 2.5V, DDR 32Mx16, 200MHz, 66 pin TSOP II (400 mil) RoHS 28A magazzino
Min: 1
Mult.: 1

SDRAM - DDR 512 Mbit 16 bit 200 MHz TSOP-II-66 32 M x 16 5 ns 2.3 V 2.7 V 0 C + 70 C IS43R16320E
Infineon Technologies DRAM SPCM
66217/09/2026 previsto
Min: 1
Mult.: 1

HyperRAM 512 Mbit 8 bit 200 MHz FBGA-24 64 M x 8 35 ns 1.7 V 2 V - 40 C + 85 C Tray
AP Memory DRAM 512Mb 200MHz 18V ITemp Suggested Alt APS512XXN-OB9-BG same device higher speed
2.88005/06/2026 previsto
Min: 1
Mult.: 1

PSRAM (Pseudo SRAM) 512 Mbit 8 bit / 16 bit 200 MHz BGA-24 64 M x 8/32 M x 16 1.62 V 1.98 V - 40 C + 85 C IoT RAM Tray
Alliance Memory DRAM LPDDR1 (MICRON), 2Gb, 64M x 32, 1.8v, 200MHz, 90-BALL FBGA, Extended Temp
13.927In ordine
Min: 1
Mult.: 1
: 1.000

SDRAM - LPDDR 2 Gbit 32 bit 200 MHz VFBGA-90 64 M x 32 4.8 ns 1.7 V 1.95 V - 25 C + 85 C Reel, Cut Tape, MouseReel
Infineon Technologies S80KS2562GABHI020
Infineon Technologies DRAM SPCM
1.014In ordine
Min: 1
Mult.: 1

HyperRAM 256 Mbit 8 bit 200 MHz FBGA-24 32 M x 8 35 ns 1.7 V 2 V - 40 C + 85 C Tray
ISSI DRAM 512Mb 1.8V 200Mhz Mobile DDR
1.20016/07/2026 previsto
Min: 1
Mult.: 1

SDRAM Mobile - DDR 512 Mbit 16 bit 200 MHz BGA-60 32 M x 16 5 ns 1.7 V 1.95 V - 40 C + 85 C IS43LR16320C Tray
Alliance Memory DRAM DDR1, 512Mb, 32M X 16, 2.5V, 66pin TSOP II, 200 MHz, Industrial Temp (A)
5824/06/2026 previsto
Min: 1
Mult.: 1

SDRAM - DDR 512 Mbit 16 bit 200 MHz TSOP-II-66 32 M x 16 700 ps 2.3 V 2.7 V - 40 C + 85 C AS4C32M16D1A Tray
Alliance Memory DRAM SDRAM, 64Mb, 4M x 16, 3.3V, 54pin TSOP II, 200Mhz, Commerical Temp - Tray
10810/06/2026 previsto
Min: 1
Mult.: 1

SDRAM 64 Mbit 16 bit 200 MHz TSOP-II-54 4 M x 16 4.5 ns 3 V 3.6 V 0 C + 70 C AS4C4M16SA Tray
Infineon Technologies DRAM SPCM Tempo di consegna, se non a magazzino 26 settimane
Min: 1
Mult.: 1

HyperRAM 256 Mbit 200 MHz FBGA-24 35 ns 1.7 V 2 V - 40 C + 105 C Tray
AP Memory DRAM IoT RAM 128Mb OPI (x8,x16) DDR 200MHz, 1.8V, Ind. Temp., WLCSP Tempo di consegna, se non a magazzino 20 settimane
Min: 5.000
Mult.: 5.000
: 5.000

PSRAM (Pseudo SRAM) 128 Mbit 8 bit / 16 bit 200 MHz WLCSP-24 16 M x 8/8 M x 16 1.62 V 1.98 V - 40 C + 85 C IoT RAM Reel
AP Memory DRAM IoT RAM 256Mb OPI (x8) DDR 200MHz, 1.8V, Ind. Temp., BGA24 (OctaRAM for Renesas RZ/A SoC) Tempo di consegna, se non a magazzino 20 settimane
Min: 4.800
Mult.: 4.800

PSRAM (Pseudo SRAM) 256 Mbit 8 bit 200 MHz BGA-24 32 M x 8 6.5 ns 1.62 V 1.98 V - 40 C + 85 C Tray
AP Memory DRAM IoT RAM 256Mb OPI (x8,x16) DDR 200MHz, 1.8V, Ind. Temp., WLCSP Tempo di consegna, se non a magazzino 20 settimane
Min: 5.000
Mult.: 5.000
: 5.000

PSRAM (Pseudo SRAM) 256 Mbit 8 bit / 16 bit 200 MHz WLCSP-24 32 M x 8/16 M x 16 1.62 V 1.98 V - 40 C + 85 C IoT RAM Reel