ISSI DRAM

Risultati: 1.828
Seleziona Immagine Codice Produttore Descrizione Scheda dati Disponibilità Prezzi (EUR) Filtra i risultati nella tabella per prezzo unitario in base alla quantità. Qtà RoHS Modello ECAD Tipo Dimensioni memoria Larghezza bus dati Frequenza di clock massima Package/involucro Organizzazione Tempo di accesso Tensione di alimentazione - Min. Tensione di alimentazione - Max. Temperatura di lavoro minima Temperatura di lavoro massima Serie Confezione
ISSI IS42VM16400M-75BLI
ISSI DRAM 64M, 1.8V, M-SDRAM 4Mx16, 133Mhz, RoHS 2.033A magazzino
Min: 1
Mult.: 1

SDRAM Mobile 64 Mbit 16 bit 133 MHz 4 M x 16 8 ns 1.7 V 1.95 V - 40 C + 85 C IS42VM16400M
ISSI DRAM 64M, 3.3V, 143Mhz 2Mx32 SDR SDRAM 108A magazzino
Min: 1
Mult.: 1

SDRAM 64 Mbit 32 bit 143 MHz TSOP-II-86 2 M x 32 5.5 ns 3 V 3.6 V - 40 C + 105 C IS45S32200L Tray
ISSI DRAM 256M, 3.3V, SDRAM, 16Mx16, 166MHz, 54 pin TSOP II RoHS, IT, T&R 335A magazzino
Min: 1
Mult.: 1
: 1.500

SDRAM 256 Mbit 16 bit 166 MHz TSOP-II-54 16 M x 16 6 ns 3 V 3.6 V - 40 C + 85 C IS42S16160G Reel, Cut Tape, MouseReel
ISSI DRAM 10A magazzino
Min: 1
Mult.: 1

SDRAM - DDR2 2 Gbit 16 bit 400 MHz BGA-84 128 M x 16 400 ps 1.7 V 1.9 V - 40 C + 105 C
ISSI DRAM 256Mb, 1.8V, 333MHz 16Mx16 DDR2 SDRAM 148A magazzino
Min: 1
Mult.: 1

SDRAM - DDR2 256 Mbit 16 bit 333 MHz BGA-84 16 M x 16 450 ps 1.7 V 1.9 V - 40 C + 95 C IS43DR16160B Tray
ISSI DRAM 512M (64Mx8) 166MHz 2.5v DDR SDRAM 135A magazzino
Min: 1
Mult.: 1

SDRAM - DDR 512 Mbit 8 bit 166 MHz TSOP-II-66 64 M x 8 6 ns 2.3 V 2.7 V - 40 C + 85 C IS43R86400D Tray
ISSI DRAM 256M (16Mx16) 166MHz 2.5v DDR SDRAM 10A magazzino
Min: 1
Mult.: 1

SDRAM - DDR 256 Mbit 16 bit 166 MHz TSOP-II-66 16 M x 16 6 ns 2.3 V 2.7 V 0 C + 70 C IS43R16160D Tray
ISSI DRAM 64M (4Mx16) 143MHz SDR SDRAM 3.3v 122A magazzino
Min: 1
Mult.: 1

SDRAM 64 Mbit 16 bit 143 MHz TSOP-II-54 4 M x 16 5.5 ns 3 V 3.6 V - 40 C + 105 C IS45S16400J Tray
ISSI DRAM 256M 16Mx16 166MHz SDR SDRAM, 3.3V 400A magazzino
432In ordine
Min: 1
Mult.: 1

SDRAM 256 Mbit 16 bit 166 MHz TSOP-II-54 16 M x 16 6 ns 3 V 3.6 V 0 C + 70 C IS42S16160G Tray
ISSI IS45S32800J-7TLA2
ISSI DRAM 738A magazzino
Min: 1
Mult.: 1
SDRAM 256 Mbit 32 bit 143 MHz TSOP-II-86 8 M x 32 7 ns 3 V 3.6 V - 40 C + 105 C
ISSI IS46LQ32256A-062BLA2
ISSI DRAM Automotive (Tc: -40 to +105C), 8G, 1.06-1.17/1.70-1.95V, LPDDR4, 256Mx32, 1600MHz, 200 ball BGA (10mmx14.5mm) RoHS 246A magazzino
Min: 1
Mult.: 1

SDRAM Mobile - LPDDR4 8 Gbit 32 bit 1.6 GHz BGA-200 256 M x 32 1.06 V 1.95 V - 40 C + 105 C
ISSI IS46LQ32256B-053BLA2
ISSI DRAM Automotive (Tc: -40 to +105C), 8G, 1.06-1.17/1.70-1.95V, LPDDR4, 256Mx32, 1866MHz, 200 ball BGA (10mmx14.5mm) RoHS 5A magazzino
Min: 1
Mult.: 1

ISSI IS43LR32640B-5BLI
ISSI DRAM 2G, 1.8V, Mobile DDR, 64Mx32, 200Mhz, 90 ball BGA (8mmx13mm) RoHS, IT 220A magazzino
Min: 1
Mult.: 1

BGA-90
ISSI IS46TR16640CL-125JBLA2
ISSI DRAM Automotive (Tc: -40 to +105C), 1G, 1.35V, DDR3, 64Mx16, 1600MT/s @ 10-10-10, 96 ball BGA (9mm x13mm) RoHS 577A magazzino
Min: 1
Mult.: 1

SDRAM - DDR3L 1 Gbit 16 bit 1.066 GHz BGA-96 64 M x 16 20 ns 1.283 V 1.45 V - 40 C + 105 C
ISSI IS46TR16640CL-107MBLA2
ISSI DRAM Automotive (Tc: -40 to +105C), 1G, 1.35V, DDR3, 64Mx16, 1866MT/s @ 13-13-13, 96 ball BGA (9mm x13mm) RoHS 364A magazzino
Min: 1
Mult.: 1

BGA-96
ISSI DRAM Automotive (-40 to +105C), 256M, 3.3V, SDRAM, 16Mx16, 143MHz, 54 pin TSOP II RoHS 247A magazzino
324In ordine
Min: 1
Mult.: 1

SDRAM 256 Mbit 16 bit 143 MHz TSOP-II-54 16 M x 16 5.4 ns 3 V 3.6 V - 40 C + 105 C IS45S16160J
ISSI DRAM Automotive (-40 to +85C), 512M, 3.3V, SDRAM, 32Mx16, 166MHz, 54 pin TSOP II RoHS 107A magazzino
Min: 1
Mult.: 1

SDRAM TSOP-II-54 IS45S16320F Tray
ISSI DRAM 4Gb, 256Mx16, 1.35V, Automotive, A3 Range: ( 40 C = TC = 125 C), 1866MT/s, 96-ball BGA, Lead-free, DDR3L 8A magazzino
19017/08/2026 previsto
Min: 1
Mult.: 1

SDRAM - DDR3L 4 Gbit 16 bit 933 MHz BGA-96 256 M x 16 20 ns 1.283 V 1.45 V - 40 C + 125 C IS46TR16256BL Tray
ISSI DRAM 512M 64Mx8 200MHz DDR 2.5V 34A magazzino
Min: 1
Mult.: 1

SDRAM - DDR 512 Mbit 8 bit 200 MHz TSOP-II-66 64 M x 8 700 ps 2.3 V 2.7 V - 40 C + 85 C IS43R86400F
ISSI DRAM 256M, 3.3V, SDRAM, 32Mx8, 143MHz, 54 pin TSOP II (400 mil) RoHS 156A magazzino
Min: 1
Mult.: 1

SDRAM 256 Mbit 8 bit 143 MHz TSOP-II-54 32 M x 8 5.4 ns 3 V 3.6 V 0 C + 70 C IS42S83200J
ISSI DRAM 512M 32Mx16 400MHz DDR2 1.8V 107A magazzino
20925/11/2026 previsto
Min: 1
Mult.: 1

SDRAM - DDR2 512 Mbit 16 bit 400 MHz BGA-84 32 M x 16 400 ps 1.7 V 1.9 V - 40 C + 85 C IS43DR16320E
ISSI DRAM Automotive (Tc: -40 to +95C), 2G, 1.5V, DDR3, 128Mx16, 1600MT/s @ 11-11-11, 96 ball BGA (9mm x13mm) RoHS 190A magazzino
Min: 1
Mult.: 1

SDRAM - DDR3 2 Gbit 16 bit 800 MHz BGA-96 128 M x 16 20 ns 1.425 V 1.575 V - 40 C + 95 C IS46TR16128D
ISSI DRAM 16M, 3.3V, SDRAM 1Mx16, 166Mhz,RoHS 51A magazzino
Min: 1
Mult.: 1

SDRAM 16 Mbit 16 bit 166 MHz TSOP-II-50 1 M x 16 6 ns 3 V 3.6 V 0 C + 70 C IS42S16100H
ISSI DRAM 512M, 2.5V, DDR 32Mx16, 200MHz, 66 pin TSOP II (400 mil) RoHS, IT 139A magazzino
Min: 1
Mult.: 1

SDRAM - DDR TSOP-II-66 IS43R16320F
ISSI DRAM 512M 32Mx16 166MHz DDR 2.5V 31A magazzino
Min: 1
Mult.: 1

SDRAM - DDR 512 Mbit 16 bit 166 MHz TSOP-II-66 32 M x 16 700 ps 2.3 V 2.7 V - 40 C + 85 C IS43R16320F