GaN Semiconduttori

Risultati: 801
Seleziona Immagine Codice Produttore Descrizione Scheda dati Disponibilità Prezzi (EUR) Filtra i risultati nella tabella per prezzo unitario in base alla quantità. Qtà RoHS
STMicroelectronics GaN FETs 700 V, 60 mOhm typ., 29 A, e-mode PowerGaN transistor 675A magazzino
Min: 1
Mult.: 1
: 3.000

Analog Devices Amplificatori RF 1-22GHz 15W PA
7A magazzino
Min: 1
Mult.: 1

EPC GaN FETs 100 V eGaN FET, 5.2 mohm Rdson, 2.3 mm x 1.45 mm, Cu pillar CSP 1.901A magazzino
Min: 1
Mult.: 1
: 2.500

EPC GaN FETs 100 V eGaN FET, 2 mohm Rdson, 3.23 mm x 2.88 mm, Cu pillar CSP 800A magazzino
Min: 1
Mult.: 1
: 1.000

EPC Driver di porta Integrated Circuits 100 V ePower stage in FCQFN 2.356A magazzino
3.00021/10/2026 previsto
Min: 1
Mult.: 1
: 3.000

Infineon Technologies GaN FETs CoolGaN Transistor 700 V G5 2.091A magazzino
Min: 1
Mult.: 1
: 2.500

Infineon Technologies GaN FETs CoolGaN Transistor 700 V G5 3.606A magazzino
Min: 1
Mult.: 1
: 2.500

Infineon Technologies GaN FETs 140 mohm / 600 V GaN transistor in half-bridge configuration with integrated level-shift gate driver and bootstrap diode 2.352A magazzino
Min: 1
Mult.: 1
: 3.000

Infineon Technologies GaN FETs 270 mohm / 600 V GaN transistor in half-bridge configuration with integrated level-shift gate driver and bootstrap diode 2.371A magazzino
Min: 1
Mult.: 1
: 3.000

Infineon Technologies GaN FETs 500 mohm / 600 V GaN transistor in half-bridge configuration with integrated level-shift gate driver and bootstrap diode 2.082A magazzino
Min: 1
Mult.: 1
: 3.000

Infineon Technologies GaN FETs Two 140 mohm / 650 V GaN transistors in half-bridge configuration 2.678A magazzino
Min: 1
Mult.: 1
: 3.000

Infineon Technologies GaN FETs CoolGaN Bidirectional Switch 2.767A magazzino
Min: 1
Mult.: 1
: 4.000
Power Integrations Convertitori CA-CC 20 W (85-580 VAC) 1.440A magazzino
Min: 1
Mult.: 1
: 2.000

Power Integrations Convertitori CA-CC 35 W (85-580 VAC) 1.592A magazzino
Min: 1
Mult.: 1
: 2.000

onsemi NCP1568G04DBR2G
onsemi Convertitori CA-CC ACTIVE CLAMP FLYBACK 2.418A magazzino
Min: 1
Mult.: 1
: 2.500

Texas Instruments Driver di porta 650V 170mohm GaN FET with integrated dri 1.600A magazzino
Min: 1
Mult.: 1
: 2.000

STMicroelectronics GaN FETs 700 V, 270 mOhm typ., 6 A, e-mode PowerGaN transistor 679A magazzino
Min: 1
Mult.: 1
: 2.500

Infineon Technologies GaN FETs CoolGaN Transistor 700 V G5 1.980A magazzino
Min: 1
Mult.: 1
: 2.500

Infineon Technologies GaN FETs CoolGaN Transistor 700 V G5 2.087A magazzino
Min: 1
Mult.: 1
: 2.500

Infineon Technologies GaN FETs CoolGaN Drive HB 600 V G5 3.056A magazzino
Min: 1
Mult.: 1
: 3.000
Infineon Technologies GaN FETs CoolGaN Bidirectional Switch 2.970A magazzino
Min: 1
Mult.: 1
: 4.000
Texas Instruments Driver di porta 100V 1.7mohm GaN FET with integrated dri 2.942A magazzino
Min: 1
Mult.: 1
Max.: 100
: 2.500

EPC GaN FETs EPC eGaN FET,100 V, 1.2 milliohm at 5 V(typ), 3.3 mm x 3.3 mm QFN 5.528A magazzino
6.00021/10/2026 previsto
Min: 1
Mult.: 1
: 3.000

Infineon Technologies GaN FETs CoolGaN Transistor 80 V G3 in PQFN 3x5, 1.8 mohm 9.006A magazzino
Min: 1
Mult.: 1
: 5.000

Infineon Technologies GaN FETs HV GAN DISCRETES 3.920A magazzino
1.80016/07/2026 previsto
Min: 1
Mult.: 1
: 1.800