PSRAM (Pseudo SRAM) Semiconduttori

Tipi di Semiconduttori

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Risultati: 82
Seleziona Immagine Codice Produttore Descrizione Scheda dati Disponibilità Prezzi (EUR) Filtra i risultati nella tabella per prezzo unitario in base alla quantità. Qtà RoHS
AP Memory DRAM IoT RAM 128Mb OPI (x8) DDR 133MHz, 3V, Ext. Temp., BGA24 200A magazzino
Min: 1
Mult.: 1

AP Memory DRAM 64Mb QSPI PSRAM Sync Serial x1/x4 SDR 508A magazzino
Min: 1
Mult.: 1
Nastrati: 3.000

AP Memory DRAM IoT RAM 64Mb OPI (x8) DDR 200MHz, 3V, Ind. Temp., BGA24 (OctaRAM for Renesas RA6M RZ/A SoC) 284A magazzino
Min: 1
Mult.: 1

AP Memory DRAM IoT RAM 16Mb QSPI (x4) SDR 144/84MHz, QCC51xx SoC, 1.8V, USON8 2.903A magazzino
Min: 1
Mult.: 1
Nastrati: 10.000

ISSI SRAM Pseudo SRAM 64Mb 2.170A magazzino
Min: 1
Mult.: 1
Max.: 127

Alliance Memory DRAM 128M 8Mx16 1.8V LP Pseudo SRAM IT 462A magazzino
Min: 1
Mult.: 1

AP Memory DRAM IoT RAM 64Mb OPI (x8) DDR 200MHz, 1.8V, Ext. Temp., BGA24 394A magazzino
Min: 1
Mult.: 1

ISSI IS66WVO16M8DALL-200BLI-TR
ISSI SRAM 128Mb, OctalRAM, 16Mbx8, 1.8V, 200MHz, 24-ball TFBGA, RoHS 2.379A magazzino
Min: 1
Mult.: 1
Max.: 5
Nastrati: 2.500

AP Memory DRAM 64Mb QSPI PSRAM Sync Serial x1/x4 SDR
9.05804/03/2026 previsto
Min: 1
Mult.: 1
Nastrati: 3.000

ISSI DRAM 64Mb, OctalRAM, 8Mbx8, 1.8V, 200MHz, 24-ball TFBGA, RoHS 885A magazzino
Min: 1
Mult.: 1
Max.: 37

AP Memory DRAM 256Mb 200MHz 18V ITemp Suggested Alt APS256XXN-OB9-BG same device higher speed 8.752A magazzino
Min: 1
Mult.: 1

ISSI DRAM 64Mb, OctalRAM, 8Mbx8, 3.0V, 166MHz, 24-ball TFBGA, RoHS 1.887A magazzino
Min: 1
Mult.: 1
Max.: 200

ISSI DRAM 64Mb, SerialRAM, Continuous Operation, 2.7V-3.6V, 104MHz, 8 pin SOIC 150 mil, RoHS 817A magazzino
Min: 1
Mult.: 1
Max.: 353

AP Memory DRAM IoT RAM 256Mb OPI x8,x16 DDR 200MHz, 1.8V Temp BGA24 suggested alt APS256XXN-OB9X-BG same device higher speed 3.668A magazzino
Min: 1
Mult.: 1

ISSI DRAM 32Mb, SerialRAM, Continuous Operation, 2.7V-3.6V, 104MHz, 8 pin SOIC 150 mil, RoHS 170A magazzino
Min: 1
Mult.: 1
Max.: 13

ISSI DRAM 64Mb, SerialRAM, Continuous Operation, 1.65V-1.95V, 104MHz, 8 pin SOIC 150 mil, RoHS 148A magazzino
Min: 1
Mult.: 1
Max.: 24

ISSI DRAM 32Mb, SerialRAM, 1.65V-1.95V, 104MHz, 8 pin SOIC 150 mil, RoHS 159A magazzino
Min: 1
Mult.: 1
Max.: 15

AP Memory DRAM 512Mb 200MHz 18V ITemp Suggested Alt APS512XXN-OB9-BG same device higher speed 354A magazzino
2.88020/03/2026 previsto
Min: 1
Mult.: 1

ISSI IS66WVH64M8DBLL-166B1LI
ISSI DRAM 512Mb, HyperRAM, 64Mbx8, 3.0V, 166MHz, 24-ball TFBGA, RoHS 701A magazzino
Min: 1
Mult.: 1
Max.: 200

AP Memory DRAM IoT RAM 128Mb OPI (x8) DDR 200MHz, 1.8V, Ext. Temp., BGA24 431A magazzino
Min: 1
Mult.: 1


AP Memory DRAM IoT RAM 16Mb QSPI (x1,x4) SDR 144/84MHz, RBX, 1.8V, Ind. Temp., SOP8 79A magazzino
Min: 1
Mult.: 1
Nastrati: 3.000

ISSI SRAM Pseudo SRAM, 64Mb 4Mb x16bits, CLL 240A magazzino
Min: 1
Mult.: 1
Max.: 36

AP Memory DRAM IoT RAM 64Mb OPI (x8) DDR 133MHz, 3V, Ind. Temp., BGA24
9.29004/03/2026 previsto
Min: 1
Mult.: 1

AP Memory APS12808O-OBR-WB
AP Memory DRAM IoT RAM 128Mb OPI (x8) DDR 200MHz, 1.8V, Ind. Temp., WLCSP
4.97528/05/2026 previsto
Min: 1
Mult.: 1
Nastrati: 5.000

AP Memory APS512XXN-OB9-BG
AP Memory DRAM IoT RAM 512Mb OPI (x8,x16) DDR 250MHz, 1.8V, Ind. Temp., BGA24
3.63120/03/2026 previsto
Min: 1
Mult.: 1