Risultati: 36
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Qtà RoHS Modello ECAD Tecnologia
Stile di montaggio
Package/involucro
Polarità transistor
Numero di canali
Vds - Tensione di rottura drain-source
Id - corrente di drain continua
Rds On - Drain-source sulla resistenza
Vgs - Tensione gate-source
Vgs th - Tensione di soglia gate-source
Qg - Carica del gate
Temperatura di lavoro minima
Temperatura di lavoro massima
Pd - Dissipazione di potenza
Modalità canale
Nome commerciale
Confezione
STMicroelectronics MOSFET N-Ch 650 V 0.012 Ohm 138 A MDmesh M5
Scheda dati
2.798A magazzino
Min: 1
Mult.: 1

Si Through Hole Max247-3 N-Channel 1 Channel 650 V 138 A 15 mOhms - 25 V, 25 V 4 V 414 nC - 55 C + 150 C 625 W Enhancement MDmesh Tube
STMicroelectronics MOSFET N-Ch 650V 0.067 Ohm 35A MDmesh M5 MOS
Scheda dati
4.094A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 35 A 78 mOhms - 25 V, 25 V 5 V 82 nC - 55 C + 150 C 208 W Enhancement MDmesh Tube

STMicroelectronics MOSFET N-Ch 650 Volt 33 Amp
Scheda dati
529A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 33 A 70 mOhms - 25 V, 25 V 3 V 98 nC - 55 C + 150 C 190 W Enhancement MDmesh Tube
STMicroelectronics MOSFET N-ch 650 V 0.168 Ohm 18 A MDmesh M5
Scheda dati
5.856A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 18 A 190 mOhms - 25 V, 25 V 4 V 36 nC - 55 C + 150 C 130 W Enhancement MDmesh Tube

STMicroelectronics MOSFET N-Ch 650V 0.067 Ohm 35A MDmesh M5 MOS
Scheda dati
515A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 35 A 78 mOhms - 25 V, 25 V 3 V 82 nC - 55 C + 150 C 210 W Enhancement MDmesh Tube
STMicroelectronics MOSFET N-Ch 650V 0.168 Ohm 18A Mdmesh V
Scheda dati
969A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 18 A 190 mOhms - 25 V, 25 V 4 V 36 nC - 55 C + 150 C 130 W Enhancement MDmesh Tube

STMicroelectronics MOSFET N-Ch 650V 0.037 Ohm 58A MDMesh M5 MOS
Scheda dati
702A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 58 A 45 mOhms - 25 V, 25 V 3 V 143 nC - 55 C + 150 C 330 W Enhancement MDmesh Tube
STMicroelectronics MOSFET N-channel 650 V MDMesh
Scheda dati
708A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 22 A 125 mOhms - 25 V, 25 V 3 V 64 nC - 55 C + 150 C 140 W Enhancement MDmesh Tube
STMicroelectronics MOSFET POWER MOSFET N-CH 650V
Scheda dati
1.683A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 8.5 A 430 mOhms - 25 V, 25 V 4 V 20 nC - 55 C + 150 C 25 W Enhancement MDmesh Tube
STMicroelectronics MOSFET N-Ch 650V 0.098 Ohm 29 A MDmesh M5
Scheda dati
1.225A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 18.3 A 110 mOhms - 25 V, 25 V 3 V 62.5 nC - 55 C + 150 C 190 W Enhancement MDmesh Tube
STMicroelectronics MOSFET N-Ch 550V 0.18 Ohm 13A Mdmesh M5
Scheda dati
2.190A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 550 V 13 A 240 mOhms - 25 V, 25 V 3 V 31 nC - 55 C + 150 C 90 W Enhancement MDmesh Tube

STMicroelectronics MOSFET N-Ch 650V 0.056 Ohm 42 A MDmesh M5
Scheda dati
504A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 42 A 63 mOhms - 25 V, 25 V 3 V 98 nC - 55 C + 150 C 250 W Enhancement MDmesh Tube
STMicroelectronics MOSFET N-Ch 650V 0.076 Ohm 30 A MDmesh M5
Scheda dati
493A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 30 A 95 mOhms - 25 V, 25 V 3 V 71 nC - 55 C + 150 C 190 W Enhancement MDmesh Tube
STMicroelectronics MOSFET N-Ch 650V 0.076 Ohm 30 A MDmesh M5
Scheda dati
431A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 19 A 95 mOhms - 25 V, 25 V 3 V 71 nC - 55 C + 150 C 35 W Enhancement MDmesh Tube
STMicroelectronics MOSFET N-Ch 650V 0.124 Ohm 22 A MDmesh V
Scheda dati
739A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 22 A 148 mOhms - 25 V, 25 V 3 V 45 nC - 55 C + 150 C 150 W Enhancement MDmesh Tube
STMicroelectronics MOSFET N-CH 65V 12A MDMESH
Scheda dati
8.345A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 12 A 279 mOhms - 25 V, 25 V 4 V 31 nC - 55 C + 150 C 25 W Enhancement MDmesh Tube
STMicroelectronics MOSFET N-Ch 650V 0.056 Ohm 42 A MDmesh M5
Scheda dati
1.996A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 42 A 63 mOhms - 25 V, 25 V 3 V 98 nC - 55 C + 150 C 40 W Enhancement MDmesh Tube
STMicroelectronics MOSFET N-Ch 650V 0.037 Ohm 58A MDMesh M5 MOS
Scheda dati
338A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-3PF-3 N-Channel 1 Channel 650 V 58 A 45 mOhms - 25 V, 25 V 3 V 143 nC - 55 C + 150 C 79 W Enhancement MDmesh Tube
STMicroelectronics MOSFET N-Ch 650 Volt 33 Amp
Scheda dati
786A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 33 A 70 mOhms - 25 V, 25 V 3 V 98 nC - 55 C + 150 C 190 W Enhancement MDmesh Tube
STMicroelectronics MOSFET N-Ch 650V 0.056 Ohm 42 A MDmesh M5
Scheda dati
1.959A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 42 A 63 mOhms - 25 V, 25 V 3 V 98 nC - 55 C + 150 C 250 W Enhancement MDmesh Tube

STMicroelectronics MOSFET N-Ch 650V 0.076 Ohm 30 A MDmesh M5
Scheda dati
1.353A magazzino
60010/02/2026 previsto
Min: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 30 A 95 mOhms - 25 V, 25 V 3 V 71 nC - 55 C + 150 C 190 W Enhancement MDmesh Tube
STMicroelectronics MOSFET N-Ch 650V 0.014 Ohm Mdmesh M5 130A
Scheda dati
136A magazzino
Min: 1
Mult.: 1

Si Through Hole Max247-3 N-Channel 1 Channel 650 V 130 A 17 mOhms - 25 V, 25 V 3 V 363 nC - 55 C + 150 C 625 W Enhancement MDmesh Tube
STMicroelectronics MOSFET N-Ch 650V 0.43 Ohm MDmesh M5 710 VDSS
Scheda dati
441A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 9 A 480 mOhms - 25 V, 25 V 3 V 17 nC - 55 C + 150 C 85 W Enhancement MDmesh Tube
STMicroelectronics MOSFET N-Ch 650V 0.124 Ohm 22 A MDmesh
Scheda dati
229A magazzino
1.000In ordine
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 13.9 A 148 mOhms 30 W MDmesh Tube
STMicroelectronics MOSFET N-Ch 650 Volt 12 Amp
Scheda dati
376A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 12 A 299 mOhms - 25 V, 25 V 3 V 31 nC - 55 C + 150 C 90 W Enhancement MDmesh Tube