MDmesh DM6 N-channel Power MOSFETs

STMicroelectronics MDmesh DM6 N-channel Power MOSFETs are part of the MDmesh™ DM6 fast-recovery diodes. These automotive-grade N-channel power MOSFETs offer very low recovery charge (Qrr) and recovery time (trr), combined with low RDS(on). The DM6 power MOSFETs feature low gate charge, low input capacitance, low on-resistance, high dv/dt ruggedness, and Zener-protection. These power MOSFETs are suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.

Risultati: 19
Seleziona Immagine Codice Produttore Descrizione Scheda dati Disponibilità Prezzi (EUR) Filtra i risultati nella tabella per prezzo unitario in base alla quantità. Qtà RoHS Modello ECAD Tecnologia Stile di montaggio Package/involucro Polarità transistor Numero di canali Vds - Tensione di rottura drain-source Id - corrente di drain continua Rds On - Drain-source sulla resistenza Vgs - Tensione gate-source Vgs th - Tensione di soglia gate-source Qg - Carica del gate Temperatura di lavoro minima Temperatura di lavoro massima Pd - Dissipazione di potenza Modalità canale Qualifica Nome commerciale Confezione
STMicroelectronics MOSFET N-channel 600 V, 0.085 Ohm typ., 30 A MDmesh DM6 Power MOSFET in a TO-247 packag 377A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 30 A 99 mOhms - 25 V, 25 V 3.25 V 44 nC - 55 C + 150 C 210 W Enhancement MDmesh Tube
STMicroelectronics MOSFET N-channel 600 V, 0.085 Ohm typ., 30 A MDmesh DM6 Power MOSFET in a TO-220 packag 1.008A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 30 A 99 mOhms - 25 V, 25 V 3.25 V 44 nC - 55 C + 150 C 210 W Enhancement MDmesh Tube
STMicroelectronics MOSFET N-channel 650 V, 33 mOhm typ., 75 A MDmesh DM6 Power MOSFET in a TO247-4 package 556A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-247-4 N-Channel 1 Channel 650 V 75 A 36 mOhms - 25 V, 25 V 4.75 V 118 nC - 55 C + 150 C 480 W Enhancement Tube
STMicroelectronics MOSFET N-channel 600 V, 345 mOhm typ., 10 A MDmesh DM6 Power MOSFET in a DPAK package 2.369A magazzino
Min: 1
Mult.: 1
Nastrati: 2.500

Si SMD/SMT N-Channel 1 Channel 600 V 10 A 390 mOhms - 25 V, 25 V 4.75 V 17 nC - 55 C + 150 C 90 W Enhancement MDmesh Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET N-channel 600 V, 72 mOhm typ., 45 A MDmesh DM6 Power MOSFET in a PowerFLAT 8x8 H 1.501A magazzino
Min: 1
Mult.: 1
Nastrati: 3.000

Si SMD/SMT PowerFLAT-5 N-Channel 1 Channel 600 V 45 A 84 mOhms - 25 V, 25 V 4.75 V 52 nC - 55 C + 150 C 174 W Enhancement MDmesh Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET N-channel 650 V, 33 mOhm typ., 75 A MDmesh DM6 Power MOSFET in a TO-247 long lea 407A magazzino
Min: 1
Mult.: 1

Si Through Hole N-Channel 1 Channel 650 V 75 A 36 mOhms - 25 V, 25 V 4.75 V 118 nC - 55 C + 150 C 480 W Enhancement Tube
STMicroelectronics MOSFET Automotive-grade N-channel 650 V, 102 mOhm typ., 28 A MDmesh DM6 Power MOSFET in 816A magazzino
Min: 1
Mult.: 1
Nastrati: 1.000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 650 V 18 A 115 mOhms - 25 V, 25 V 4.75 V 46 nC - 55 C + 150 C 223 W Enhancement AEC-Q101 MDmesh Reel, Cut Tape, MouseReel


STMicroelectronics MOSFET Automotive-grade N-channel 600 V, 70 mOhm typ., 36 A MDmesh DM6 Power MOSFET in 59A magazzino
Min: 1
Mult.: 1
Nastrati: 600

Si SMD/SMT N-Channel 1 Channel 600 V 36 A 80 Ohms - 25 V, 25 V 4.75 V 55 nC - 55 C + 150 C 250 W Enhancement AEC-Q101 Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET Automotive grade N-channel 650V 35 mOhm 64A MDmesh DM6 half-bridge Power MOSFET 192A magazzino
Min: 1
Mult.: 1
Nastrati: 200

Si N-Channel 650 V 64 A 35 mOhms AQG 324 Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET Automotive grade N-channel 650V 89 mOhm 32A MDmesh DM6 half-bridge Power MOSFET 45A magazzino
Min: 1
Mult.: 1
Nastrati: 200

Si N-Channel 650 V 32 A 89 mOhms AQG 324 Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET Automotive-grade N-channel 400 V, 50 mOhm typ., 41 A MDmesh DM6 Power MOSFET in 439A magazzino
1.00010/02/2026 previsto
Min: 1
Mult.: 1
Nastrati: 1.000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 400 V 41 A 65 mOhms - 25 V, 25 V 3 V 53 nC - 55 C + 150 C 250 W Enhancement AEC-Q101 MDmesh Reel, Cut Tape
STMicroelectronics MOSFET Automotive-grade N-channel 500 V, 61 mOhm typ., 38 A MDmesh DM6 Power MOSFET in 995A magazzino
Min: 1
Mult.: 1
Nastrati: 1.000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 500 V 38 A 71 mOhms - 25 V, 25 V 3 V 57 nC - 55 C + 150 C 250 W Enhancement AEC-Q101 MDmesh Reel, Cut Tape

STMicroelectronics MOSFET N-channel 600 V, 286 mOhm typ., 12 A MDmesh DM6 Power MOSFET in a DPAK package 733A magazzino
Min: 1
Mult.: 1
Nastrati: 2.500

Si SMD/SMT N-Channel 1 Channel 600 V 12 A 338 mOhms - 25 V, 25 V 4.75 V 15.3 nC - 55 C + 150 C 110 W Enhancement MDmesh Reel, Cut Tape, MouseReel


STMicroelectronics MOSFET Automotive-grade N-channel 650 V, 33 mOhm typ., 72 A MDmesh DM6 Power MOSFET in 7A magazzino
Min: 1
Mult.: 1

Si Through Hole N-Channel 1 Channel 650 V 72 A 39 mOhms - 25 V, 25 V 4.75 V 118 nC - 55 C + 150 C 480 W Enhancement AEC-Q101 MDmesh Tube
STMicroelectronics MOSFET Automotive-grade N-channel 600 V, 70 mOhm typ., 36 A MDmesh DM6 Power MOSFET in 1.000A magazzino
Min: 1
Mult.: 1
Nastrati: 1.000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 36 A 80 mOhms - 25 V, 25 V 3 V 55 nC - 55 C + 150 C 250 W Enhancement AEC-Q101 MDmesh Reel, Cut Tape


STMicroelectronics MOSFET Automotive-grade N-channel 650 V, 83 mOhm typ., 37 A MDmesh DM6 Power MOSFET in
1.20023/03/2026 previsto
Min: 1
Mult.: 1
Nastrati: 600

Si SMD/SMT N-Channel 1 Channel 650 V 37 A 97 mOhms - 25 V, 25 V 4.75 V 52.6 nC - 55 C + 150 C 320 W Enhancement AEC-Q101 Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET Automotive-grade N-channel 600 V, 70 mOhm typ., 36 A MDmesh DM6 Power MOSFET in 31A magazzino
Min: 1
Mult.: 1

Si Through Hole I2PAK-3 N-Channel 1 Channel 600 V 36 A 80 mOhms - 25 V, 25 V 4.75 V 55 nC - 55 C + 150 C 250 W Enhancement AEC-Q101 MDmesh Tube
STMicroelectronics MOSFET Automotive-grade N-channel 600 V, 84 mOhm typ., 29 A MDmesh DM6 Power MOSFET in Tempo di consegna, se non a magazzino 14 settimane
Min: 600
Mult.: 600
Nastrati: 600

Si SMD/SMT N-Channel 1 Channel 600 V 29 A 99 mOhms - 25 V, 25 V 4.75 V 46 nC - 55 C + 150 C 210 W Enhancement AEC-Q101 Reel
STMicroelectronics MOSFET Automotive-grade N-channel 650 V, 102 mOhm typ., 28 A MDmesh DM6 Power MOSFET in Tempo di consegna, se non a magazzino 14 settimane
Min: 1.000
Mult.: 1.000
Nastrati: 1.000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 650 V 18 A 115 mOhms - 25 V, 25 V 4.75 V 46 nC - 55 C + 150 C 223 W Enhancement AEC-Q101 MDmesh Reel