650V 3rd Gen SiC MOSFETs

STMicroelectronics 650V 3rd Generation Silicon Carbide (SiC) MOSFETs feature low on-state resistance (RDS(on)) per area, even at high temperatures, and excellent switching performance. This translates into more efficient and compact systems. The SiC MOSFETs feature excellent switching performance over IGBTs, simplifying the thermal design of power electronic systems. These 650V SiC MOSFETs have been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The low RDS(on), low capacitances, and high switching operations improve application performance in frequency, energy efficiency, system size, and weight reduction.

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Descrizione Scheda dati Disponibilità Prezzi (EUR) Filtra i risultati nella tabella per prezzo unitario in base alla quantità.
Qtà RoHS Modello ECAD Stile di montaggio
Package/involucro
Polarità transistor
Numero di canali
Vds - Tensione di rottura drain-source
Id - corrente di drain continua
Rds On - Drain-source sulla resistenza
Vgs - Tensione gate-source
Vgs th - Tensione di soglia gate-source
Qg - Carica del gate
Temperatura di lavoro minima
Temperatura di lavoro massima
Pd - Dissipazione di potenza
Modalità canale
Qualifica
STMicroelectronics MOSFET SiC Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in an H2PAK-7 package
Scheda dati
860A magazzino
Min: 1
Mult.: 1
: 1.000

SMD/SMT H2PAK-7 N-Channel 1 Channel 650 V 60 A 39.3 mOhms - 10 V, + 22 V 3 V 48.6 nC - 55 C + 175 C 300 W Enhancement AEC-Q101
STMicroelectronics MOSFET SiC Silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in a TO-LL package
Scheda dati
1.714A magazzino
Min: 1
Mult.: 1
: 1.800

SMD/SMT TOLL-8 N-Channel 1 Channel 650 V 30 A 72 mOhms - 10 V, + 22 V 3 V 31 nC - 55 C + 175 C 234 W Enhancement


STMicroelectronics MOSFET SiC Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package
Scheda dati
455A magazzino
Min: 1
Mult.: 1

Through Hole HiP-247-4 N-Channel 1 Channel 650 V 55 A 27 mOhms - 18 V, + 18 V 4.2 V 77 nC - 55 C + 200 C 398 W Enhancement AEC-Q101


STMicroelectronics MOSFET SiC Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
Scheda dati
517A magazzino
Min: 1
Mult.: 1

Through Hole HiP247-4 N-Channel 1 Channel 650 V 30 A 63 mOhms - 10 V, + 22 V 3 V 37.5 nC - 55 C + 200 C 240 W Enhancement


STMicroelectronics MOSFET SiC Automotive-grade silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
Scheda dati
481A magazzino
Min: 1
Mult.: 1

Through Hole HiP247-4 N-Channel 1 Channel 650 V 30 A 63 mOhms - 10 V, + 22 V 3 V 37.5 nC - 55 C + 200 C 240 W Enhancement AEC-Q101


STMicroelectronics MOSFET SiC Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
Scheda dati
45A magazzino
1.00026/02/2027 previsto
MouseReel disponibile
Min: 1
Mult.: 1
: 1.000

SMD/SMT H2PAK-7 N-Channel 1 Channel 650 V 55 A 27 mOhms - 18 V, + 18 V 4.2 V 79.4 nC - 55 C + 175 C 385 W Enhancement AEC-Q101
STMicroelectronics MOSFET SiC Automotive-grade silicon carbide Power MOSFET 650 V 40 mOhm typ. 30 A
Scheda dati
843A magazzino
MouseReel disponibile
Min: 1
Mult.: 1
: 1.000

SMD/SMT N-Channel 1 Channel 650 V 30 A 40 mOhms - 10 V, + 22 V 4.2 V 39.5 nC - 55 C + 175 C 221 W Enhancement AEC-Q101
STMicroelectronics MOSFET SiC Silicon carbide Power MOSFET 650 V, 40 mOhm typ., 35 A in a TO-LL package
Scheda dati
8A magazzino
1.80013/07/2026 previsto
Min: 1
Mult.: 1
: 1.800

SMD/SMT TOLL-8 N-Channel 1 Channel 650 V 35 A 63 mOhms - 10 V, + 22 V 3 V 42.5 nC - 55 C + 175 C 288 W Enhancement


STMicroelectronics MOSFET SiC Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A
Scheda dati
7A magazzino
60005/10/2026 previsto
Min: 1
Mult.: 1

Through Hole HiP-247-4 N-Channel 1 Channel 650 V 30 A 72 mOhms - 18 V, + 18 V 4.2 V 32 nC - 55 C + 200 C 210 W Enhancement AEC-Q100
STMicroelectronics MOSFET SiC Silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
Scheda dati
Tempo di consegna, se non a magazzino 21 settimane
Min: 1.000
Mult.: 1.000
: 1.000

SMD/SMT H2PAK-7 N-Channel 1 Channel 650 V 55 A 27 mOhms -10 V, 22 V 4.2 V 79.4 nC - 55 C + 175 C 385 W Enhancement