Risultati: 49
Seleziona Immagine Codice Produttore Descrizione Scheda dati Disponibilità Prezzi (EUR) Filtra i risultati nella tabella per prezzo unitario in base alla quantità. Qtà RoHS Modello ECAD Tecnologia Stile di montaggio Package/involucro Polarità transistor Numero di canali Vds - Tensione di rottura drain-source Id - corrente di drain continua Rds On - Drain-source sulla resistenza Vgs - Tensione gate-source Vgs th - Tensione di soglia gate-source Qg - Carica del gate Temperatura di lavoro minima Temperatura di lavoro massima Pd - Dissipazione di potenza Modalità canale Qualifica Nome commerciale Confezione
Infineon Technologies MOSFET 20V 1 N-CH HEXFET 11.7mOhms 14nC 7.931A magazzino
16.000In ordine
Min: 1
Mult.: 1
: 4.000

Si SMD/SMT PQFN 2x2 (DFN2020) N-Channel 1 Channel 20 V 22 A 11.7 mOhms - 12 V, 12 V 1.1 V 14 nC - 55 C + 150 C 9.6 W Enhancement StrongIRFET Reel, Cut Tape, MouseReel

Infineon Technologies MOSFET MOSFT 30V 5.2A 28mOhm 3.6nC Qg 104.714A magazzino
Min: 1
Mult.: 1
: 3.000

Si SMD/SMT SOT-23-3 N-Channel 1 Channel 30 V 5.3 A 27 mOhms - 20 V, 20 V 1.3 V 2.6 nC - 55 C + 150 C 1.3 W Enhancement HEXFET Reel, Cut Tape, MouseReel

Infineon Technologies MOSFET MOSFT 40V 3.6A 56mOhm 2.6nC Qg 67.141A magazzino
231.000In ordine
Min: 1
Mult.: 1
: 3.000

Si SMD/SMT SOT-23-3 N-Channel 1 Channel 40 V 3.6 A 78 mOhms - 16 V, 16 V 2.5 V 2.6 nC - 55 C + 150 C 1.3 W Enhancement HEXFET Reel, Cut Tape, MouseReel

Infineon Technologies MOSFET MOSFT 30V 2.7A 100mOhm 1.0nC 40.382A magazzino
36.000In ordine
Min: 1
Mult.: 1
: 3.000

Si SMD/SMT SOT-23-3 N-Channel 1 Channel 30 V 2.7 A 100 mOhms - 20 V, 20 V 1.3 V 1 nC - 55 C + 150 C 1.3 W Enhancement HEXFET Reel, Cut Tape, MouseReel

Infineon Technologies MOSFET MOSFT 3.4A 63mOhm 30V 2.5V drv capable 33.855A magazzino
240.00004/02/2027 previsto
Min: 1
Mult.: 1
: 3.000

Si SMD/SMT SOT-23-3 N-Channel 1 Channel 30 V 3.4 A 63 mOhms - 12 V, 12 V 800 mV 2.9 nC - 55 C + 150 C 1.3 W Enhancement HEXFET Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET 30V 1 N-CH HEXFET 5.8mOhms 15nC 12.631A magazzino
Min: 1
Mult.: 1
: 2.000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 30 V 86 A 8 mOhms - 20 V, 20 V 2.35 V 15 nC - 55 C + 175 C 75 W Enhancement HEXFET Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET 30V 8.3A 17.5mOhm 2.5V drive capable 27.329A magazzino
21.00007/01/2027 previsto
Min: 1
Mult.: 1
: 3.000

Si SMD/SMT TSOP-6 N-Channel 1 Channel 30 V 8.3 A 17.5 mOhms - 12 V, 12 V 1.8 V 11 nC - 55 C + 150 C 2 W Enhancement HEXFET Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET MOSFT 30V 78A 3.2mOhm 36nC Qg 4.777A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 30 V 78 A 4.2 mOhms - 20 V, 20 V 1.8 V 54 nC - 55 C + 175 C 140 W Enhancement HEXFET Tube
Infineon Technologies MOSFET 20V DUAL N-CH LOGIC LEVEL HEXFET 7.855A magazzino
Min: 1
Mult.: 1
: 4.000

Si SMD/SMT PQFN 2x2 (DFN2020) N-Channel 2 Channel 20 V 4.5 A 45 mOhms - 12 V, 12 V 1.8 V 3.1 nC - 55 C + 150 C 1.5 W Enhancement StrongIRFET Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET IFX FET >80 - 100V 911A magazzino
Min: 1
Mult.: 1
Si Through Hole N-Channel 1 Channel 100 V 52 A 12.9 mOhms - 20 V, 20 V 3.8 V 19 nC - 55 C + 175 C 71 W Enhancement Tube
Infineon Technologies MOSFET SMALL SIGNAL MOSFETS 4.642A magazzino
Min: 1
Mult.: 1
: 1.000

Si SMD/SMT SOT-223-4 P-Channel 1 Channel 60 V 1.1 A 750 mOhms - 20 V, 20 V 1 V 4 nC - 55 C + 150 C 4.2 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET SMALL SIGNAL MOSFETS 362A magazzino
5.000In ordine
Min: 1
Mult.: 1
: 1.000

Si SMD/SMT SOT-223-4 N-Channel 1 Channel 600 V 120 mA 30 Ohms - 20 V, 20 V 2.1 V 3.7 nC - 55 C + 150 C 1.8 W Depletion Reel, Cut Tape
Infineon Technologies MOSFET SMALL SIGNAL MOSFETS 31.944A magazzino
Min: 1
Mult.: 1
: 3.000

Si SMD/SMT N-Channel 1 Channel 100 V 190 mA 6 Ohms - 20 V, 20 V 1.8 V 630 pC - 55 C + 150 C 500 mW Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET IFX FET > 60-80V 568A magazzino
Min: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 80 V 191 A 1.9 mOhms - 20 V, 20 V 3.8 V 124 nC - 55 C + 175 C 250 W Enhancement Tube
Infineon Technologies MOSFET IFX FET > 60-80V 519A magazzino
1.00028/01/2027 previsto
Min: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 80 V 182 A 2.4 mOhms - 20 V, 20 V 3.8 V 89 nC - 55 C + 175 C 214 W Enhancement Tube

Infineon Technologies MOSFET MOSFT 25V 5.8A 24mOhm 5.4 Qg 891A magazzino
111.000In ordine
Min: 1
Mult.: 1
: 3.000

Si SMD/SMT SOT-23-3 N-Channel 1 Channel 25 V 5.8 A 41 mOhms - 20 V, 20 V 1.7 V 5.4 nC - 55 C + 175 C 1.25 W Enhancement HEXFET Reel, Cut Tape, MouseReel

Infineon Technologies MOSFET MOSFT 20V 4.1A 46mOhm 2.5V cpbl 1.902A magazzino
156.000In ordine
Min: 1
Mult.: 1
: 3.000

Si SMD/SMT SOT-23-3 N-Channel 1 Channel 20 V 4.1 A 46 mOhms - 12 V, 12 V 1.8 V 3.5 nC - 55 C + 150 C 1.3 W Enhancement HEXFET Reel, Cut Tape, MouseReel

Infineon Technologies MOSFET MOSFT 5.0A 29mOhm 30V 2.5V drv capable
270.000In ordine
Min: 1
Mult.: 1
: 3.000

Si SMD/SMT SOT-23-3 N-Channel 1 Channel 30 V 5 A 29 mOhms - 12 V, 12 V 800 mV 6.8 nC - 55 C + 150 C 1.3 W Enhancement HEXFET Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET MOSFT 30V 78A 4.8mOhm 15nC Qg 1.013A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 30 V 92 A 6.8 mOhms - 20 V, 20 V 1.8 V 23 nC - 55 C + 175 C 75 W Enhancement HEXFET Tube

Infineon Technologies MOSFET MOSFT 20V 6.3A 21mOhm 2.5V cpbl
286.863In ordine
Min: 1
Mult.: 1
: 3.000

Si SMD/SMT SOT-23-3 N-Channel 1 Channel 20 V 6.3 A 21 mOhms - 12 V, 12 V 1.8 V 8.9 nC - 55 C + 150 C 1.3 W Enhancement HEXFET Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET IFX FET > 60-80V
2.00028/01/2027 previsto
Min: 1
Mult.: 1

Si Through Hole N-Channel 1 Channel 80 V 196 A 1.6 mOhms - 20 V, 20 V 3.8 V 170 nC - 55 C + 175 C 300 W Enhancement Tube
Infineon Technologies MOSFET SMALL SIGNAL MOSFETS
2.90018/02/2027 previsto
Min: 1
Mult.: 1
: 1.000

Si SMD/SMT SOT-223-4 P-Channel 1 Channel 60 V 3.7 A 65 mOhms - 20 V, 20 V 2.1 V 39 nC - 55 C + 150 C 4.2 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET 30V 1 N-CH HEXFET 2.8nC
32.00025/02/2027 previsto
Min: 1
Mult.: 1
: 4.000

Si SMD/SMT PQFN 2x2 (DFN2020) N-Channel 2 Channel 30 V 3.6 A 63 mOhms - 12 V, 12 V 1.8 V 2.8 nC - 55 C + 150 C 1.5 W Enhancement StrongIRFET Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET IFX FET >80 - 100V
1.59603/09/2026 previsto
Min: 1
Mult.: 1
: 800

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 100 V 103 A 5.05 mOhms - 20 V, 20 V 2.2 V 51 nC - 55 C + 175 C 150 W Enhancement Reel, Cut Tape