SuperFET® III MOSFETs

onsemi SuperFET® III MOSFETs are high voltage Super-Junction (SJ) N-Channel MOSFETs designed to meet the high power density, system efficiency, and exceptional reliability requirements of telecom, server, electric vehicle (EV) charger and solar products. These devices combine best-in-class reliability, low EMI, excellent efficiency, and superior thermal performance to make them an ideal choice for high-performance applications. Complementing their performance characteristics, the broad range of package options offered by onsemi SuperFET III MOSFETs gives product designers high flexibility, particularly with size-constrained designs.

Risultati: 127
Seleziona Immagine Codice Produttore Descrizione Scheda dati Disponibilità Prezzi (EUR) Filtra i risultati nella tabella per prezzo unitario in base alla quantità. Qtà RoHS Modello ECAD Tecnologia Stile di montaggio Package/involucro Polarità transistor Numero di canali Vds - Tensione di rottura drain-source Id - corrente di drain continua Rds On - Drain-source sulla resistenza Vgs - Tensione gate-source Vgs th - Tensione di soglia gate-source Qg - Carica del gate Temperatura di lavoro minima Temperatura di lavoro massima Pd - Dissipazione di potenza Modalità canale Qualifica Nome commerciale Confezione

onsemi MOSFET SUPERFET3 650V TO247 PKG 309A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 75 A 27.4 mOhms - 30 V, 30 V 3 V 227 nC - 55 C + 150 C 595 W Enhancement AEC-Q101 SuperFET III Tube

onsemi MOSFET SuperFET3 650V 23 mOhm 35A magazzino
90027/03/2026 previsto
Min: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 75 A 23 mOhms - 30 V, 30 V 2.5 V 222 nC - 55 C + 150 C 595 W Enhancement SuperFET III Tube

onsemi MOSFET SuperFET3 650V 99 mOhm, TO247 PKG 328A magazzino
Min: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 30 A 99 mOhms - 30 V, 30 V 2.5 V 61 nC - 55 C + 150 C 227 W Enhancement Tube

onsemi MOSFET SuperFET3 650V 99 mOhm,TO220 PKG 1.233A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 30 A 79 mOhms - 30 V, 30 V 2.5 V 61 nC - 55 C + 150 C 227 W Enhancement Tube

onsemi MOSFET SUPERFET3 650V 24A 125 mOhm 344A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 24 A 125 mOhms - 30 V, 30 V 2.5 V 46 nC - 55 C + 150 C 181 W Enhancement Tube

onsemi MOSFET SUPERFET3 650V TO220 PKG 630A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 17 A 190 mOhms - 30 V, 30 V 2.5 V 33 nC - 55 C + 150 C 144 W Enhancement Tube

onsemi MOSFET SUPERFET3 650V TO220 PKG 721A magazzino
Min: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 12 A 260 mOhms - 30 V, 30 V 2.5 V 24 nC - 55 C + 150 C 90 W Enhancement Tube
onsemi MOSFET SUPERFET3 FAST 95MOHM TO-247-4 450A magazzino
Min: 1
Mult.: 1

Si Through Hole N-Channel 1 Channel 650 V 30 A 95 mOhms - 30 V, 30 V 4 V 58 nC - 55 C + 150 C 208 W Enhancement Tube

onsemi MOSFET FRFET 650 V 65 A 40 mOhm TO-247 9A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 65 A 32 mOhms - 30 V, 30 V 5 V 159 nC - 55 C + 150 C 446 W Enhancement SuperFET III Tube

onsemi MOSFET SUPERFET3 FAST 67MOHM T 68A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 40 A 67 mOhms - 30 V, 30 V 4 V 80 nC - 55 C + 150 C 266 W Enhancement Tube
onsemi MOSFET SF3 FAST 95MOHM PQFN88 2.850A magazzino
Min: 1
Mult.: 1
Nastrati: 3.000

Si SMD/SMT TDFN-4 N-Channel 1 Channel 650 V 30 A 95 mOhms - 30 V, 30 V 4 V 58 nC - 55 C + 150 C 208 W Enhancement Reel, Cut Tape, MouseReel

onsemi MOSFET SUPERFET3 650V FRFET 190M 434A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 20 A 190 mOhms - 30 V, 30 V 3 V 34 nC - 55 C + 150 C 162 W Enhancement SuperFET III Tube
onsemi MOSFET SUPERFET3 650V FRFET110MOHM TF220 25A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 30 A 110 mOhms - 30 V, 30 V 3 V 62 nC - 55 C + 150 C 240 W Enhancement SuperFET III Tube
onsemi MOSFET SUPERFET3 FAST 190MOHM TO-220F 324A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 16 A 190 mOhms - 30 V, 30 V 4 V 31 nC - 55 C + 150 C 32 W Enhancement Tube
onsemi MOSFET SF3 650V EASY 125MOHM D2PAK AUTO 20A magazzino
Min: 1
Mult.: 1
Nastrati: 800

Si D2PAK-3 (TO-263-3) Reel, Cut Tape
onsemi MOSFET SF3 650V EASY 260MOHM D2 473A magazzino
Min: 1
Mult.: 1
Nastrati: 800

Si D2PAK-3 (TO-263-3) Reel, Cut Tape


onsemi MOSFET SF3 FRFET AUTO 40MOHM T 12A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-247-4 N-Channel 1 Channel 650 V 65 A 40 mOhms - 30 V, 30 V 5 V 160 nC - 55 C + 150 C 446 W Enhancement Tube

onsemi MOSFET SF3 650V EASY 40MOHM TO- 134A magazzino
Min: 1
Mult.: 1

Si TO-247-3 Tube
onsemi MOSFET SUPERFET3 650V TO220F PKG 754A magazzino
Min: 1
Mult.: 1

Si Through Hole N-Channel 1 Channel 650 V 6 A 600 mOhms - 30 V, 30 V 4.5 V 11 nC - 55 C + 150 C 24 W Enhancement Tube
onsemi MOSFET SUPERFET3 650V TO220F PKG 10A magazzino
Min: 1
Mult.: 1

Si Through Hole N-Channel 1 Channel 650 V 12 A 250 mOhms - 30 V, 30 V 4.5 V 24 nC - 55 C + 150 C 31 W Enhancement Tube

onsemi MOSFET FRFET 650V 75A 27.4 mOhm 32A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-247-4 N-Channel 1 Channel 650 V 75 A 27.4 mOhms - 30 V, 30 V 5 V 259 nC - 55 C + 150 C 595 W Enhancement Tube

onsemi MOSFET FRFET 650 V 65 A 40 mOhm TO-247 26A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-247-4 N-Channel 1 Channel 650 V 65 A 40 mOhms - 30 V, 30 V 3 V 158 nC - 55 C + 150 C 446 W Enhancement SuperFET III Tube
onsemi MOSFET 650V 64MOHM MOSFET
6.00016/10/2026 previsto
Min: 1
Mult.: 1
Nastrati: 3.000

Si SMD/SMT TDFN-4 N-Channel 1 Channel 650 V 40 A 64 mOhms - 30 V, 30 V 4 V 82 nC - 55 C + 150 C 260 W Enhancement SuperFET III Reel, Cut Tape, MouseReel
onsemi MOSFET SF3 FRFET 650V 90MOHM PQFN88
2.99820/07/2026 previsto
Min: 1
Mult.: 1
Nastrati: 3.000

Si SMD/SMT TDFN-4 N-Channel 1 Channel 650 V 36 A 90 mOhms - 30 V, 30 V 5 V 66 nC - 55 C + 150 C 272 W Enhancement Reel, Cut Tape, MouseReel
onsemi MOSFET PQFN88 PKG, 99mohm 650V, SuperFET3 21.000Disponibile a magazzino presso produttore
Min: 3.000
Mult.: 3.000
Nastrati: 3.000
Si SMD/SMT Power-88-4 N-Channel 1 Channel 650 V 30 A 87 mOhms - 30 V, 30 V 2.5 V 56 nC - 55 C + 150 C 227 W Enhancement SuperFET III Reel