SuperFET® III MOSFETs

onsemi SuperFET® III MOSFETs are high voltage Super-Junction (SJ) N-Channel MOSFETs designed to meet the high power density, system efficiency, and exceptional reliability requirements of telecom, server, electric vehicle (EV) charger and solar products. These devices combine best-in-class reliability, low EMI, excellent efficiency, and superior thermal performance to make them an ideal choice for high-performance applications. Complementing their performance characteristics, the broad range of package options offered by onsemi SuperFET III MOSFETs gives product designers high flexibility, particularly with size-constrained designs.

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Qtà RoHS Modello ECAD Tecnologia
Stile di montaggio
Package/involucro
Polarità transistor
Numero di canali
Vds - Tensione di rottura drain-source
Id - corrente di drain continua
Rds On - Drain-source sulla resistenza
Vgs - Tensione gate-source
Vgs th - Tensione di soglia gate-source
Qg - Carica del gate
Temperatura di lavoro minima
Temperatura di lavoro massima
Pd - Dissipazione di potenza
Modalità canale
Qualifica
Nome commerciale
Confezione

onsemi MOSFET SUPERFET3 650V TO247 PKG
Scheda dati
711A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 65 A 40 mOhms - 30 V, 30 V 3 V 153 nC - 55 C + 150 C 446 W Enhancement AEC-Q101 SuperFET III Tube

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Scheda dati
268A magazzino
Min: 1
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Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 65 A 40 mOhms - 30 V, 30 V 3 V 158 nC - 55 C + 150 C 446 W Enhancement Tube

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Scheda dati
450A magazzino
Min: 1
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Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 40 A 82 mOhms - 30 V, 30 V 5 V 81 nC - 55 C + 150 C 313 W Enhancement SuperFET III Tube

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Scheda dati
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Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 19 A 165 mOhms - 30 V, 30 V 4 V 35 nC - 55 C + 150 C 142 W Enhancement Tube
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Si SMD/SMT D²PAK-3 N-Channel 1 Channel 650 V 24 A 125 mOhms - 30 V, 30 V 4.5 V 46 nC - 55 C + 150 C 181 W Enhancement Reel, Cut Tape

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Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 650 V 10 A 360 mOhms - 30 V, 30 V 2.5 V 18 nC - 55 C + 150 C 83 W Enhancement Reel, Cut Tape, MouseReel

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660A magazzino
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Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 30 A 110 mOhms - 30 V, 30 V 3 V 62 nC - 55 C + 150 C 240 W Enhancement SuperFET III Tube

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703A magazzino
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Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 24 A 150 mOhms - 30 V, 30 V 3 V 43 nC - 55 C + 150 C 192 W Enhancement Tube
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Scheda dati
866A magazzino
Min: 1
Mult.: 1

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Scheda dati
853A magazzino
Min: 1
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Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 36 A 95 mOhms - 30 V, 30 V 3 V 66 nC - 55 C + 150 C 272 W Enhancement SuperFET III Tube
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Scheda dati
670A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 650 V 30 A 95 mOhms - 30 V, 30 V 4 V 58 nC - 55 C + 150 C 40 W Enhancement Tube
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Scheda dati
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Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 650 V 30 A 110 mOhms - 30 V, 30 V 3 V 58 nC - 55 C + 150 C 240 W Enhancement AEC-Q101 Reel, Cut Tape, MouseReel

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Scheda dati
846A magazzino
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Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 17 A 159 mOhms - 30 V, 30 V 2.5 V 33 nC - 55 C + 150 C 144 W Enhancement Tube

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Scheda dati
1.600A magazzino
Min: 1
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Si SMD/SMT TDFN-4 N-Channel 1 Channel 650 V 24 A 150 mOhms - 30 V, 30 V 5 V 43 nC - 55 C + 150 C 192 W Enhancement Reel, Cut Tape
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Scheda dati
852A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 24 A 125 mOhms - 30 V, 30 V 4 V 44 nC - 55 C + 150 C 37 W Enhancement Tube