S29 GL-S MIRRORBIT™ Eclipse™ Flash

Infineon Technologies S29 GL-S MIRRORBIT™ Eclipse™ Flash products are fabricated on 65nm process technology. These devices offer a fast page access time - as fast as 15ns with a corresponding random access time as fast as 90ns. MIRRORBIT Eclipse™ Flash non-volatile memory is a CMOS 3V core with versatile I/O interface. Infineon S29 GL-S MIRRORBIT Eclipse™ Flash features a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation. This results in faster effective programming time than standard programming algorithms. Programming time makes the S29 GL-S flash ideal for today's embedded applications that require higher density, better performance, and lower power consumption.

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Infineon Technologies NOR Flash PNOR
Scheda dati
1.342A magazzino
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Mult.: 1
: 2.200

SMD/SMT FBGA-64 S29GL01G/512/256/128S 1 Gbit 2.7 V 3.6 V 60 mA Parallel 64 M x 16 16 bit Asynchronous - 40 C + 85 C Reel, Cut Tape, MouseReel
Infineon Technologies NOR Flash PNOR
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1.200A magazzino
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Mult.: 1

SMD/SMT FBGA-64 S29GL01G/512/256/128S 1 Gbit 2.7 V 3.6 V 60 mA Parallel 64 M x 16 16 bit Asynchronous - 40 C + 105 C Tray
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SMD/SMT TSOP-56 S29GL01G/512/256/128S 1 Gbit 2.7 V 3.6 V 60 mA Parallel 64 M x 16 16 bit Asynchronous - 40 C + 85 C Tray
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Scheda dati
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Mult.: 1

SMD/SMT TSOP-56 S29GL01G/512/256/128S 1 Gbit 2.7 V 3.6 V 60 mA Parallel 64 M x 16 16 bit Asynchronous - 40 C + 105 C Tray
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225A magazzino
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