Risultati: 18
Seleziona Immagine Codice Produttore Descrizione Scheda dati Disponibilità Prezzi (EUR) Filtra i risultati nella tabella per prezzo unitario in base alla quantità. Qtà RoHS Modello ECAD Tecnologia Stile di montaggio Package/involucro Polarità transistor Numero di canali Vds - Tensione di rottura drain-source Id - corrente di drain continua Rds On - Drain-source sulla resistenza Vgs - Tensione gate-source Vgs th - Tensione di soglia gate-source Qg - Carica del gate Temperatura di lavoro minima Temperatura di lavoro massima Pd - Dissipazione di potenza Modalità canale Nome commerciale Confezione
Infineon Technologies MOSFET CONSUMER 4.489A magazzino
Min: 1
Mult.: 1
: 2.500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 500 V 6.6 A 2.25 Ohms - 20 V, 20 V 3 V 10.5 nC - 55 C + 150 C 53 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET CONSUMER 6.598A magazzino
Min: 1
Mult.: 1
: 2.500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 500 V 18.1 A 280 mOhms - 20 V, 20 V 3 V 32.6 nC - 55 C + 150 C 119 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET CONSUMER 3.512A magazzino
Min: 1
Mult.: 1
: 2.500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 500 V 14.1 A 380 mOhms - 20 V, 20 V 3 V 24.8 nC - 55 C + 150 C 98 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET CONSUMER 2.000A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 500 V 24.8 A 450 mOhms - 20 V, 20 V 3 V 47.2 nC - 40 C + 150 C 32 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET CONSUMER 12.355A magazzino
Min: 1
Mult.: 1
: 3.000

Si SMD/SMT SOT-223-3 N-Channel 1 Channel 500 V 2.4 A 4.68 Ohms - 20 V, 20 V 2.5 V 6 nC - 40 C + 150 C 5 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET CONSUMER 942A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 500 V 11.1 A 1.17 Ohms - 20 V, 20 V 3 V 18.7 nC - 40 C + 150 C 28 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET CONSUMER 693A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 500 V 14.1 A 340 mOhms - 20 V, 20 V 2.5 V 24.8 nC - 40 C + 150 C 29.2 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET CONSUMER 1.475A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 500 V 14.1 A 340 mOhms - 20 V, 20 V 2.5 V 24.8 nC - 40 C + 150 C 29.2 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET CONSUMER 239A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 500 V 7.6 A 720 mOhms - 20 V, 20 V 2.5 V 12.4 nC - 40 C + 150 C 26.4 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET CONSUMER 1.534A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 500 V 7.6 A 720 mOhms - 20 V, 20 V 2.5 V 12.4 nC - 40 C + 150 C 26.4 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET CONSUMER 998A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 550 V 6.6 A 2.22 Ohms - 20 V, 20 V 3 V 10.5 nC - 40 C + 150 C 25.7 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET CONSUMER 3.240A magazzino
Min: 1
Mult.: 1
: 3.000

Si SMD/SMT SOT-223-3 N-Channel 1 Channel 500 V 3.1 A 3.28 Ohms - 20 V, 20 V 2.5 V 8.2 nC - 40 C + 150 C 5 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET CONSUMER 328A magazzino
Min: 1
Mult.: 1
: 2.500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 500 V 3.6 A 2 Ohms - 20 V, 20 V 3 V 6 nC - 55 C + 150 C 33 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET CONSUMER
2.43707/09/2026 previsto
Min: 1
Mult.: 1
: 2.500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 500 V 2.6 A 3 Ohms - 20 V, 20 V 3 V 4.3 nC - 55 C + 150 C 26 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET CONSUMER
25.000In ordine
Min: 1
Mult.: 1
: 2.500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 500 V 7.6 A 500 mOhms - 20 V, 20 V 3 V 18.7 nC - 55 C + 150 C 57 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET CONSUMER
3.90009/07/2026 previsto
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 500 V 18.1 A 280 mOhms - 20 V, 20 V 3.5 V 32.6 nC - 40 C + 150 C 30.4 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET N-Ch 500V 18.5A TO220-3
50002/07/2026 previsto
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 500 V 24.8 A 190 mOhms - 20 V, 20 V 2.5 V 47.2 nC - 55 C + 150 C 152 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET N-Ch 500V 18.5A TO220-3
99502/07/2026 previsto
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 500 V 24.8 A 170 mOhms - 20 V, 20 V 2.5 V 47.2 nC - 55 C + 150 C 152 W Enhancement CoolMOS Tube