Silicon Carbide (SiC) Diodes & Rectifiers

IXYS Silicon Carbide (SiC) Diodes and Rectifiers are ideal for applications where improvements in efficiency, reliability, and thermal management are desired. These SiC diodes and rectifiers come with a 1200V maximum repetitive reverse blocking voltage. They are available in dual-, phase-leg, or common cathode configurations. The IFAVMTotal for these devices ranges from 12.5A to 60A. IXYS Silicon Carbide (SiC) Diodes and Rectifiers are offered in either SOT-227B or ISOPLUS247 packages. These devices are ideal for use in solar inverters, uninterruptible power supply (UPS), welding equipment, switched-mode power supplies, medical equipment, or as high-speed rectifiers.

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Descrizione Scheda dati Disponibilità Prezzi (EUR) Filtra i risultati nella tabella per prezzo unitario in base alla quantità.
Qtà RoHS Modello ECAD Stile di montaggio
Package/involucro
Configurazione
If - Corrente diretta
Vrrm - Tensione inversa ripetitiva
Vf - Tensione diretta
Ifsm - Sovracorrente diretta
Ir - Corrente inversa
Temperatura di lavoro minima
Temperatura di lavoro massima
Confezione
Littelfuse Diodi Schottky SiC Pwr Diode Disc-Schottky SOT-227B miniblc
Scheda dati
89A magazzino
Min: 1
Mult.: 1

Screw Mount SOT-227B-4 Dual 105 A 1.2 kV 1.6 V 1.15 kA 140 uA - 40 C + 150 C Tube
Littelfuse Diodi Schottky SiC Pwr Diode Disc-Schottky SOT-227B miniblc
Scheda dati
1A magazzino
Min: 1
Mult.: 1

Screw Mount SOT-227B-4 Dual 44 A 1.2 kV 1.5 V 1.15 kA 35 uA - 40 C + 150 C Tube