Bipolar Transistors

Toshiba Bipolar Transistors are pre-biased transistors designed for low noise and low saturation voltage applications. These bipolar transistors are AEC-Q101 qualified and offer PNP, NPN, NPN + NPN, PNP + PNP, and NPN + PNP polarities for operation. These transistors are available in 25MHz, 30MHz, 35MHz, 55MHz, 100MHz, 120MHz, 200MHz, and 300MHz transition frequency with 3 pin, 5pin, 6pin, and 8pin variants.

Tipi di Transistor

Modifica visualizzazione categoria
Risultati: 101
Seleziona Immagine Codice Produttore Descrizione Scheda dati Disponibilità Prezzi (EUR) Filtra i risultati nella tabella per prezzo unitario in base alla quantità. Qtà RoHS Tipo di prodotto Tecnologia Stile di montaggio Package/involucro Polarità transistor
Toshiba Transistor bipolari - BJT Transistor for Low Freq. Amplification 16.566A magazzino
Min: 1
Mult.: 1
: 3.000

BJTs - Bipolar Transistors Si SMD/SMT PNP
Toshiba Transistor bipolari - BJT X35 Pb-F POWER TRANSISTOR; TSM; MOQ=3000; PC=1W; F=100KHZ 2.688A magazzino
Min: 1
Mult.: 1
: 3.000

BJTs - Bipolar Transistors Si SMD/SMT 2-3S1C-3 PNP
Toshiba Transistor bipolari - BJT X35 Pb-F POWER TRANSISTOR TSM MOQ=3000 PD=1W F=1MHZ 3.794A magazzino
Min: 1
Mult.: 1
: 3.000

BJTs - Bipolar Transistors SMD/SMT 2-3S1C-3 PNP
Toshiba Transistor bipolari - BJT X35 Pb-F POWER TRANSISTOR PW-MINI MOQ=1000 V=50 PD=1W F=1MHZ 17A magazzino
2.000In ordine
Min: 1
Mult.: 1
: 1.000

BJTs - Bipolar Transistors Si SMD/SMT SC-62-3 PNP
Toshiba Transistor bipolari - BJT X35 Pb-F POWER TRANSISTOR; PW-MOLD; MOQ=2000; PC=1W; F=100KHZ 840A magazzino
2.00016/10/2026 previsto
Min: 1
Mult.: 1
: 2.000

BJTs - Bipolar Transistors Si SMD/SMT 2-7J1A-3 PNP
Toshiba Transistor bipolari - BJT TRANS-SS PNP 3SMD 50V 2.817A magazzino
3.00023/10/2026 previsto
Min: 1
Mult.: 1
: 3.000

BJTs - Bipolar Transistors Si SMD/SMT PNP
Toshiba Transistor bipolari - BJT TRANS-SS PNP 3SMD 20V 354A magazzino
3.00007/09/2026 previsto
Min: 1
Mult.: 1
: 3.000

BJTs - Bipolar Transistors Si SMD/SMT PNP
Toshiba Transistor bipolari - BJT Transistor for Low Freq. Amplification 12.968A magazzino
Min: 1
Mult.: 1
: 3.000

BJTs - Bipolar Transistors Si SMD/SMT TO-236-3 NPN
Toshiba Transistor bipolari - BJT Transistor for Low Freq. Amplification 29.174A magazzino
Min: 1
Mult.: 1
: 3.000

BJTs - Bipolar Transistors Si SMD/SMT SC-70-3 NPN
Toshiba Transistor bipolari - BJT USM PLN TRANSISTOR Pd=100mW F=80MHz 2.359A magazzino
21.00007/09/2026 previsto
Min: 1
Mult.: 1
: 3.000

BJTs - Bipolar Transistors Si SMD/SMT SC-70-3 NPN
Toshiba Transistor bipolari - BJT TRANS-SS NPN SOT323 120V 10.413A magazzino
Min: 1
Mult.: 1
: 3.000

BJTs - Bipolar Transistors Si SMD/SMT NPN
Toshiba Transistor bipolari - BJT USM PLN TRANSISTOR Pd=100mW F=1MHz 886A magazzino
Min: 1
Mult.: 1
: 3.000

BJTs - Bipolar Transistors Si SMD/SMT NPN

Toshiba Transistor bipolari - BJT Transistor for Low Freq. Amplification 4.761A magazzino
27.00025/09/2026 previsto
Min: 1
Mult.: 1
: 3.000

BJTs - Bipolar Transistors Si SMD/SMT SC-75-3 NPN
Toshiba Transistor bipolari - BJT TRANS-SS NPN 3SMD 50V 3.407A magazzino
Min: 1
Mult.: 1
: 3.000

BJTs - Bipolar Transistors Si SMD/SMT NPN
Toshiba Transistor bipolari - BJT US6 PLN TRANSISTOR Pd=200mW F=1MHz 8.893A magazzino
Min: 1
Mult.: 1
: 3.000

BJTs - Bipolar Transistors Si SMD/SMT US-6 PNP

Toshiba Transistor bipolari - BJT Transistor for Low Freq Sm-Signal Amp 1.832A magazzino
6.00001/01/2027 previsto
Min: 1
Mult.: 1
: 3.000

BJTs - Bipolar Transistors Si SMD/SMT SOT-363-6 NPN, PNP
Toshiba Transistor bipolari - BJT NPN + NPN Ind. Transistor, VCEO=50V, IC=0.15A, hFE=120 to 400 in SOT-26 (SM6) package 10.473A magazzino
Min: 1
Mult.: 1
: 3.000

BJTs - Bipolar Transistors Si SMD/SMT US-6 NPN

Toshiba Transistor bipolari - BJT Transistor for Low Freq Sm-Signal Amp 3.547A magazzino
6.00025/09/2026 previsto
Min: 1
Mult.: 1
: 3.000

BJTs - Bipolar Transistors Si SMD/SMT SOT-363-6 NPN

Toshiba Transistor bipolari - BJT Dual Trans NPN x 2 20V, 0.3A, SM6 7.572A magazzino
Min: 1
Mult.: 1
: 3.000

BJTs - Bipolar Transistors Si SMD/SMT SOT-26-6 NPN
Toshiba Transistor bipolari - BJT NPN + NPN Ind. Transistor, VCEO=20V, IC=0.3A, hFE=350 to 1200 in SOT-26 (SM6) package 2.902A magazzino
Min: 1
Mult.: 1
: 3.000

BJTs - Bipolar Transistors Si SMD/SMT US-6 NPN
Toshiba Transistor bipolari - BJT Dual Trans PNP x 2 US6, -50V, -0.15A 481A magazzino
Min: 1
Mult.: 1
: 3.000

BJTs - Bipolar Transistors Si SMD/SMT US-6 PNP

Toshiba Transistor bipolari - BJT BJT NPN 0.15A 50V 5.885A magazzino
9.00025/09/2026 previsto
Min: 1
Mult.: 1
: 3.000

BJTs - Bipolar Transistors Si SMD/SMT SOT-23-3 NPN

Toshiba Transistor bipolari - BJT BJT PNP -0.15A -50V 3.710A magazzino
9.00014/12/2026 previsto
Min: 1
Mult.: 1
: 3.000

BJTs - Bipolar Transistors Si SMD/SMT SOT-23-3 PNP

Toshiba Transistor bipolari - BJT Transistor for Low Freq. Amplification 6.833A magazzino
Min: 1
Mult.: 1
: 3.000

BJTs - Bipolar Transistors Si SMD/SMT SOT-23-3 NPN

Toshiba Transistor bipolari - BJT Transistor for Low Freq. Amplification 7.303A magazzino
Min: 1
Mult.: 1
: 3.000

BJTs - Bipolar Transistors Si SMD/SMT SOT-23-3 PNP