Latest Technologies in Power MOSFET & IGBT

STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETs and IGBTs tailored to specific applications, targeting SMPS, lighting, motor control, and varied industrial applications. ST's portfolio includes high-voltage super-junction MOSFETs, trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST's 1200V SiC MOSFETs combine a high junction temperature rating of 200°C with a very low RDS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. M series IGBTs offer an optimized VCE(SAT) and E(off) tradeoff along with a rugged short circuit rating for motor control. Explore ST's complete offering of MOSFETs and IGBTs for any power design.

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STMicroelectronics MOSFET N-Ch 600V 0.175 Ohm typ. 18A MDmesh DM2
Scheda dati
485A magazzino
Min: 1
Mult.: 1

MOSFETs Si Through Hole TO-247-3

STMicroelectronics MOSFET N-Ch 800V 0.19 Ohm 19.5 A MDmesh K5
Scheda dati
366A magazzino
Min: 1
Mult.: 1

MOSFETs Si Through Hole TO-247-3

STMicroelectronics MOSFET N-channel 650 V, 0.15 Ohm typ., 20 A MDmesh M2 Power MOSFET in TO-247 package
Scheda dati
711A magazzino
Min: 1
Mult.: 1

MOSFETs Si Through Hole TO-247-3

STMicroelectronics MOSFET POWER MOSFET N-CH 650V 22 A
Scheda dati
15A magazzino
60009/03/2026 previsto
Min: 1
Mult.: 1

MOSFETs Si Through Hole TO-247-3

STMicroelectronics MOSFET N-Ch 650 V 0.124 Ohm 22 A MDmesh M5
Scheda dati
600A magazzino
Min: 1
Mult.: 1

MOSFETs Si Through Hole TO-247-3

STMicroelectronics MOSFET N-channel 600 V, 60 mOhm typ., 42 A MDmesh M2 Power MOSFET in a TO-247 package
Scheda dati
602A magazzino
Min: 1
Mult.: 1

MOSFETs Si Through Hole TO-247-3

STMicroelectronics MOSFET N-Ch 650 V 0.033 Ohm 69 A MDmesh(TM)
Scheda dati
23A magazzino
267In ordine
Min: 1
Mult.: 1

MOSFETs Si Through Hole TO-247-3

STMicroelectronics MOSFET N-channel 1050 V, 1.4 Ohm typ., 4 A MDmesh K5 Power MOSFET in a TO-247 package
Scheda dati
248A magazzino
Min: 1
Mult.: 1

MOSFETs Si Through Hole TO-247-3
STMicroelectronics MOSFET N-channel 650 V, 0.79 Ohm typ., 5 A MDmesh M2 Power MOSFET in TO-220 package
Scheda dati
Commenti sul prodotto
903A magazzino
Min: 1
Mult.: 1

MOSFETs Si Through Hole TO-220-3
STMicroelectronics Moduli MOSFET N-channel 650 V, 0.012 Ohm typ., 143 A MDmesh M5 Power MOSFET in an ISOTOP packa
Scheda dati
800In ordine
Min: 1
Mult.: 1

MOSFET Modules Si Screw Mount ISOTOP
STMicroelectronics MOSFET N-Ch 650V 0.067 Ohm 35A MDmesh M5 MOS
Scheda dati
3.95116/03/2026 previsto
Min: 1
Mult.: 1

MOSFETs Si Through Hole TO-220-3

STMicroelectronics MOSFET N-Ch 650V 0.024 Ohm 84A MDMesh M5
Scheda dati
2.97927/07/2026 previsto
Min: 1
Mult.: 1

MOSFETs Si Through Hole TO-247-3
STMicroelectronics MOSFET N-channel 500 V, 0.24 Ohm typ., 13 A MDmesh M2 Power MOSFET in a TO-220FP packag
Scheda dati
686A magazzino
Min: 1
Mult.: 1

MOSFETs Si Through Hole TO-220-3
STMicroelectronics MOSFET N-channel 650 V, 0.275 Ohm typ., 12 A MDmesh M2 Power MOSFET in a TO-220FP packa
Scheda dati
643A magazzino
Min: 1
Mult.: 1

MOSFETs Si Through Hole TO-220-3
STMicroelectronics IGBTs 600V 20A Hi Spd TrenchGate FieldStop
Scheda dati
292A magazzino
Min: 1
Mult.: 1

IGBT Transistors Si Through Hole TO-247-3
STMicroelectronics MOSFET N-channel 650 V, 0.024 Ohm typ., 88 A MDmesh M5 Power MOSFET in a ISOTOP package
Scheda dati
39923/11/2026 previsto
Min: 1
Mult.: 1

MOSFETs Si SMD/SMT ISOTOP-4
STMicroelectronics MOSFET N-CH 600V 0.078Ohm typ. 34A MDmesh M2
Scheda dati
99515/06/2026 previsto
Min: 1
Mult.: 1

MOSFETs Si Through Hole TO-220-3

STMicroelectronics MOSFET N-channel 600 V, 0.045 Ohm typ., 52 A MDmesh M2 Power MOSFET in a TO-247 package
Scheda dati
1.20018/05/2026 previsto
Min: 1
Mult.: 1

MOSFETs Si Through Hole TO-247-3

STMicroelectronics MOSFET N-Ch 650V 46A Auto 0.041 Ohm MDMesh M5
Scheda dati
1.20009/03/2026 previsto
Min: 1
Mult.: 1

MOSFETs Si Through Hole TO-247-3
STMicroelectronics MOSFET N-channel 500 V, 325 mOhm typ., 10 A MDmesh M2 Power MOSFET in a TO-220FP packag
Scheda dati
183A magazzino
Min: 1
Mult.: 1

MOSFETs Si Through Hole TO-220-3
STMicroelectronics MOSFET N-Ch 800V 0.3Ohm 14A pwr MOSFET
Scheda dati
15A magazzino
Min: 1
Mult.: 1

MOSFETs Si Through Hole TO-220-3
STMicroelectronics MOSFET N-CH 65V 33A MDMESH
Scheda dati
44A magazzino
Min: 1
Mult.: 1

MOSFETs Si Through Hole TO-220-3
STMicroelectronics MOSFET N-CH 800V 2.1Ohm 3A Zener-protected
Scheda dati
717A magazzino
Min: 1
Mult.: 1

MOSFETs Si Through Hole TO-220-3


STMicroelectronics IGBTs Trench gate field-stop 650 V, 40 A high speed HB series IGBT
Scheda dati
290A magazzino
Min: 1
Mult.: 1

IGBT Transistors Si Through Hole TO-3PF
STMicroelectronics IGBTs 650V 60A HSpd trench gate field-stop IGB
Scheda dati
219A magazzino
Min: 1
Mult.: 1

IGBT Transistors Si Through Hole TO-3P